Gallium nitride semiconductor
    1.
    发明申请
    Gallium nitride semiconductor 审中-公开
    氮化镓半导体

    公开(公告)号:US20110101371A1

    公开(公告)日:2011-05-05

    申请号:US12930179

    申请日:2010-12-30

    IPC分类号: H01L29/20

    摘要: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

    摘要翻译: 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层,其厚度介于1微米与6微米之间,设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度,以实现具有大于500伏特的击穿电压,超过1安培的电流容量和小于3伏特的正向电压的器件。

    Gallium Nitride Semiconductor Device
    2.
    发明申请
    Gallium Nitride Semiconductor Device 有权
    氮化镓半导体器件

    公开(公告)号:US20090035925A1

    公开(公告)日:2009-02-05

    申请号:US12249099

    申请日:2008-10-10

    IPC分类号: H01L21/425

    摘要: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

    摘要翻译: 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层,其厚度介于1微米与6微米之间,设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度,以实现具有大于500伏特的击穿电压,超过1安培的电流容量和小于3伏特的正向电压的器件。

    Gallium nitride semiconductor device
    3.
    发明授权
    Gallium nitride semiconductor device 有权
    氮化镓半导体器件

    公开(公告)号:US07863172B2

    公开(公告)日:2011-01-04

    申请号:US12249099

    申请日:2008-10-10

    IPC分类号: H01L29/872 H01L29/47

    摘要: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

    摘要翻译: 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层,其厚度介于1微米与6微米之间,设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度,以实现具有大于500伏特的击穿电压,超过1安培的电流容量和小于3伏特的正向电压的器件。

    Gallium nitride semiconductor device
    4.
    发明授权
    Gallium nitride semiconductor device 失效
    氮化镓半导体器件

    公开(公告)号:US07436039B2

    公开(公告)日:2008-10-14

    申请号:US11030554

    申请日:2005-01-06

    IPC分类号: H01L23/58

    摘要: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.

    摘要翻译: 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层,其厚度介于1微米与6微米之间,设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度,以实现具有大于500伏特的击穿电压,超过1安培的电流容量和小于3伏特的正向电压的器件。