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公开(公告)号:US20110101371A1
公开(公告)日:2011-05-05
申请号:US12930179
申请日:2010-12-30
申请人: TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Rick Stall
发明人: TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Rick Stall
IPC分类号: H01L29/20
CPC分类号: H01L29/872 , H01L29/2003 , H01L29/475
摘要: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
摘要翻译: 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层,其厚度介于1微米与6微米之间,设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度,以实现具有大于500伏特的击穿电压,超过1安培的电流容量和小于3伏特的正向电压的器件。
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公开(公告)号:US20090035925A1
公开(公告)日:2009-02-05
申请号:US12249099
申请日:2008-10-10
申请人: TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
发明人: TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
IPC分类号: H01L21/425
CPC分类号: H01L29/872 , H01L29/2003 , H01L29/475
摘要: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
摘要翻译: 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层,其厚度介于1微米与6微米之间,设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度,以实现具有大于500伏特的击穿电压,超过1安培的电流容量和小于3伏特的正向电压的器件。
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公开(公告)号:US07863172B2
公开(公告)日:2011-01-04
申请号:US12249099
申请日:2008-10-10
申请人: TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
发明人: TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
IPC分类号: H01L29/872 , H01L29/47
CPC分类号: H01L29/872 , H01L29/2003 , H01L29/475
摘要: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
摘要翻译: 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层,其厚度介于1微米与6微米之间,设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度,以实现具有大于500伏特的击穿电压,超过1安培的电流容量和小于3伏特的正向电压的器件。
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公开(公告)号:US07436039B2
公开(公告)日:2008-10-14
申请号:US11030554
申请日:2005-01-06
申请人: TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
发明人: TingGang Zhu , Bryan S. Shelton , Marek K. Pabisz , Mark Gottfried , Linlin Liu , Milan Pophristic , Michael Murphy , Richard A. Stall
IPC分类号: H01L23/58
CPC分类号: H01L29/872 , H01L29/2003 , H01L29/475
摘要: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.
摘要翻译: 由氮化镓基半导体肖特基二极管制成的n +掺杂GaN层,其厚度介于1微米与6微米之间,设置在蓝宝石衬底上; 设置在图案化成多个细长指状物的所述n + GaN层上的厚度大于1微米的n掺杂GaN层和设置在n掺杂GaN层上并与其形成肖特基结的金属层。 优化了层厚度和细长指状物的长度和宽度,以实现具有大于500伏特的击穿电压,超过1安培的电流容量和小于3伏特的正向电压的器件。
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公开(公告)号:US20100140627A1
公开(公告)日:2010-06-10
申请号:US12575717
申请日:2009-10-08
申请人: Bryan S. Shelton , Marek K. Pabisz , TingGang Zhu , Linlin Liu , Boris Peres
发明人: Bryan S. Shelton , Marek K. Pabisz , TingGang Zhu , Linlin Liu , Boris Peres
IPC分类号: H01L23/495 , H01L29/20
CPC分类号: H01L23/49562 , H01L21/56 , H01L23/3107 , H01L23/562 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/2919 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/49 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/19043 , H01L2924/20755 , H01L2924/2076 , H01L2924/3011 , H01L2924/00014 , H01L2924/0665 , H01L2924/00 , H01L2924/00012
摘要: A packaged semiconductor device including a semiconductor die mounted on a header of a leadframe. A plurality of spaced external conductors extends from the header and at least one of the external conductors has a bond wire post at one end thereof such that a bonding wire extends between the bond wire post and the semiconductor die. The package device also includes a housing, which encloses the semiconductor die, the header, the bonding wire and the bonding wire post resulting in an insulated packaged device.
摘要翻译: 一种封装的半导体器件,包括安装在引线框的头部上的半导体管芯。 多个间隔开的外部导体从集管延伸,并且至少一个外部导体在其一端具有接合线柱,使得接合线在接合线柱和半导体管芯之间延伸。 包装装置还包括壳体,其包围半导体管芯,集管,接合线和接合线柱,形成绝缘的封装装置。
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