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    Magnetoresistive element and magnetic memory
    3.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US08878324B2

    公开(公告)日：2014-11-04

    申请号：US14168627

    申请日：2014-01-30

    申请人： Kabushiki Kaisha Toshiba ,  Tohoku University

    发明人： Yushi Kato ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Takao Ochiai ,  Takahide Kubota ,  Shigemi Mizukami ,  Terunobu Miyazaki

    IPC分类号： H01L27/105 ,  H01L43/10

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    摘要： The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %≦x≦82 atm %, 18 atm %≦y≦23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.

    摘要翻译： 本发明涉及一种包括第一磁性层，第二磁性层，第一非磁性层，第三磁性层的磁阻元件。 第一磁性层包括MnxGey（77atm％＆nlE; x＆amp; nlE; 82atm％，18atm％＆amp; nlE; y＆nlE; 23atm％，x + y = 100atm％）的磁性膜。 第一非磁性层设置在第一磁性层和第二磁性层之间。 第三磁性层设置在第一磁性层和第一非磁性层之间或第二磁性层和第一非磁性层之间，或者设置在第一磁性层和第一非磁性层之间，以及第二磁性层与第一非磁性层之间 非磁性层。 第三磁性层包括Heusler合金。 本发明还涉及包含磁阻元件的磁存储器。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    5.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20140145279A1

    公开(公告)日：2014-05-29

    申请号：US14168627

    申请日：2014-01-30

    申请人： Tohoku University ,  Kabushiki Kaisha Toshiba

    发明人： Yushi KATO ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Takao Ochiai ,  Takahide Kubota ,  Shigemi Mizukami ,  Terunobu Miyazaki

    IPC分类号： H01L43/10

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    摘要： The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %≦x≦82 atm %, 18 atm %≦y≦23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element

    摘要翻译： 本发明涉及一种包括第一磁性层，第二磁性层，第一非磁性层，第三磁性层的磁阻元件。 第一磁性层包括MnxGey（77atm％＆nlE; x＆amp; nlE; 82atm％，18atm％＆amp; nlE; y＆nlE; 23atm％，x + y = 100atm％）的磁性膜。 第一非磁性层设置在第一磁性层和第二磁性层之间。 第三磁性层设置在第一磁性层和第一非磁性层之间或第二磁性层和第一非磁性层之间，或者设置在第一磁性层和第一非磁性层之间，以及第二磁性层与第一非磁性层之间 非磁性层。 第三磁性层包括Heusler合金。 本发明还涉及包含磁阻元件的磁存储器

    Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium
    7.
    发明授权
    Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium 有权
    具有含有钪的底层和侧壁层的磁阻效应元件

    公开(公告)号：US09508926B2

    公开(公告)日：2016-11-29

    申请号：US14637254

    申请日：2015-03-03

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa ,  Minoru Amano ,  Megumi Yakabe ,  Hiroaki Maekawa

    IPC分类号： H01L43/02 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12 ,  H01L43/00 ,  H01L43/10 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.

    摘要翻译： 磁阻效应元件包括具有磁各向异性和可变磁化方向的记录层，具有磁各向异性和不变磁化方向的参考层，记录层和参考层之间的中间层，含有钪（Sc）的底层， 在记录层的与设置有记录层的表面侧相反的表面侧，以及包含Sc的氧化物并设置在记录层和中间层的侧表面上的侧壁层。

    Magnetic memory
    8.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US09230628B2

    公开(公告)日：2016-01-05

    申请号：US14198982

    申请日：2014-03-06

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Naoharu Shimomura ,  Eiji Kitagawa ,  Minoru Amano ,  Daisuke Saida ,  Kay Yakushiji ,  Takayuki Nozaki ,  Shinji Yuasa ,  Akio Fukushima ,  Hiroshi Imamura ,  Hitoshi Kubota

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/155 ,  H01F10/32 ,  H01F10/12

    CPC分类号： G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

    摘要： A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

    摘要翻译： 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

    Magnetoresistive element using specific underlayer material
    9.
    发明授权
    Magnetoresistive element using specific underlayer material 有权
    使用特殊底层材料的磁阻元件

    公开(公告)号：US09178133B2

    公开(公告)日：2015-11-03

    申请号：US14160419

    申请日：2014-01-21

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa ,  Tadashi Kai ,  Hiroaki Yoda

    IPC分类号： H01L43/10 ,  H01F10/08 ,  G11C11/16 ,  H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  G01R33/09

    CPC分类号： H01L43/08 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3286 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.

    摘要翻译： 根据一个实施例，磁阻元件包括具有垂直于膜表面并且具有可变磁化方向的磁各向异性的记录层，具有垂直于膜表面的磁各向异性且具有不变磁化方向的参考层， 记录层和参考层，以及包含AlTiN的底层，并设置在其上设置有中间层的记录层的表面的相反侧。

    Magnetic memory
    10.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US08937832B2

    公开(公告)日：2015-01-20

    申请号：US13621969

    申请日：2012-09-18

    申请人： Kabushiki Kaisha Toshiba

    发明人： Eiji Kitagawa ,  Daisuke Saida ,  Naoharu Shimomura

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/228

    摘要： According to one embodiment, a magnetic memory includes a magnetoresistive element. The element includes a first magnetic film having a variable magnetization perpendicular to a film surface, a second magnetic film having an invariable magnetization perpendicular to the film surface, a nonmagnetic film between the first and second magnetic films, a magnetic field application layer including a third magnetic film having a magnetization parallel to the film surface. The third magnetic film applies a magnetic field parallel to the film surface to the first magnetic film. A magnitude of the magnetization of the third magnetic film when supplying a read current is larger than a magnitude of the magnetization of the third magnetic film when supplying a write current.

    摘要翻译： 根据一个实施例，磁存储器包括磁阻元件。 该元件包括具有垂直于膜表面的可变磁化强度的第一磁性膜，具有垂直于膜表面的不变磁化的第二磁性膜，第一和第二磁性膜之间的非磁性膜，包括第三磁性膜的磁场施加层 具有与膜表面平行的磁化的磁性膜。 第三磁性膜将与膜表面平行的磁场施加到第一磁性膜。 当提供读取电流时，第三磁性膜的磁化强度大于当提供写入电流时第三磁性膜的磁化强度的大小。