公开(公告)号：US06939409B2

公开(公告)日：2005-09-06

申请号：US10451202

申请日：2000-12-18

申请人： Tokiko Kanayama ,  Hiroaki Kouno

发明人： Tokiko Kanayama ,  Hiroaki Kouno

IPC分类号： A23K1/14 ,  B01D11/04 ,  B08B5/00 ,  C03C23/00 ,  C10G21/18 ,  C23F1/00 ,  C23G1/00 ,  G01L21/30 ,  G01R31/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  A23K10/37 ,  B01D11/0488 ,  H01L21/02046 ,  H01L21/02049 ,  Y02P60/877

摘要： A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF2 gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H2O reacts with XeF2, so that HF is produced. Therefore, for example, the native oxide SiO2 formed on the silicon pieces can be removed, and XeF2 can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.

摘要翻译： 通过清洁用于半导体晶片或半导体器件的制造装置和载体的除去难以除去的油脂成分和硅微片​​的清洗方法和蚀刻方法。 将要除去的物质与在真空气氛中升华产生的XeF 2气体接触，以分解和气化润滑脂组分并通过蚀刻除去硅片。 如果在清洁之前在真空气氛中留下痕量的残余水，则H 2 O 2与XeF 2 O反应，从而产生HF。 因此，例如，可以除去在硅片上形成的天然氧化物SiO 2，并且XeF 2 2可以直接与硅反应，从而能够蚀刻。 清洗和蚀刻速度极快。

公开(公告)号：US20050109733A1

公开(公告)日：2005-05-26

申请号：US11024163

申请日：2004-12-27

申请人： Tokiko Kanayama ,  Hiroaki Kouno

发明人： Tokiko Kanayama ,  Hiroaki Kouno

IPC分类号： A23K1/14 ,  B01D11/04 ,  B08B5/00 ,  C03C23/00 ,  C10G21/18 ,  C23F1/00 ,  C23G1/00 ,  G01L21/30 ,  G01R31/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  A23K10/37 ,  B01D11/0488 ,  H01L21/02046 ,  H01L21/02049 ,  Y02P60/877

摘要： A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a native oxide SiO2 formed on the surface of silicon small particles can be removed, and XeF2 directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.

公开(公告)号：US06913653B2

公开(公告)日：2005-07-05

申请号：US10451206

申请日：2001-12-17

申请人： Tokiko Kanayama ,  Hiroaki Kouno

发明人： Tokiko Kanayama ,  Hiroaki Kouno

IPC分类号： A23K1/14 ,  B01D11/04 ,  B08B5/00 ,  C03C23/00 ,  C10G21/18 ,  C23F1/00 ,  C23G1/00 ,  G01L21/30 ,  G01R31/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  A23K10/37 ,  B01D11/0488 ,  H01L21/02046 ,  H01L21/02049 ,  Y02P60/877

摘要： A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a native oxide SiO2 formed on the surface of silicon small particles can be removed, and XeF2 directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.

摘要翻译： 用于去除通常难以除去的脂肪，油和硅小颗粒的清洁方法，其粘附到用于制造半导体晶片或半导体器件的器件和载体上。 还公开了蚀刻方法。 通过升华产生的XeF 2气体在真空气氛中与待清洁物体接触，从而使油脂分解和气化，并通过蚀刻除去硅小颗粒。 在清洁之前，当真空气氛中留下痕量的残留水时，H 2 O 2与XeF 2 O反应，产生HF。 例如，可以除去在硅小颗粒的表面上形成的天然氧化物SiO 2，并且可以通过使蚀刻直接与硅反应。 清洗蚀刻速率非常高。

公开(公告)号：US20070212888A1

公开(公告)日：2007-09-13

申请号：US11751601

申请日：2007-05-21

申请人： Kazuo Kasai ,  Yoshiyuki Nozawa ,  Hiroaki Kouno

发明人： Kazuo Kasai ,  Yoshiyuki Nozawa ,  Hiroaki Kouno

IPC分类号： H01L21/302

CPC分类号： H01L21/30655 ,  H01J37/32091 ,  H01J2237/334

摘要： Silicon substrate etching methods to keep surface unevenness of a structured surface formed by etching to within a fixed value. After an etching mask is formed on its surface, a silicon substrate S is mounted on a base 3 in an etching device 1. An etching gas (SF6) and a protective film forming gas (C4F8) are supplied to a chamber 2. The SF6 gas and the C4F8 gas supplied to the chamber are converted to plasma using a coil 16 to which high-frequency electrical power is applied. For example, by supplying a large amount of SF6 gas while high-frequency electrical power is applied to the base 3, dry etching primarily at the etching ground is advanced. Conversely, by supplying a large amount of C4F8 gas, protective film formation primarily to the etching structured surfaces is advanced. By repeating these steps, deep grooves with smooth structured surfaces can be formed.

摘要翻译： 硅衬底蚀刻方法将通过蚀刻形成的结构化表面的表面凹凸保持在固定值内。 在其表面上形成蚀刻掩模之后，将硅基板S安装在蚀刻装置1中的基底3上。蚀刻气体（SF 6 S）和保护膜形成气体（C _{4 8 <！ - SIPO - >供应到腔室2. SF 6气体和C 4 F 8 使用施加高频电力的线圈16将供给到腔室的气体转换成等离子体。 例如，通过在向基体3施加高频电力的同时供给大量的SF 6气体，主要在蚀刻地面进行干法蚀刻。 相反，通过供应大量的C 4 N 8 N 8气体，主要对蚀刻结构化表面形成保护膜。 通过重复这些步骤，可以形成具有平滑结构化表面的深槽。}

公开(公告)号：US5818560A

公开(公告)日：1998-10-06

申请号：US563584

申请日：1995-11-28

申请人： Hiroaki Kouno ,  Yoshihiro Furuta ,  Eiji Tamaoka ,  Kazuhiro Inoue

发明人： Hiroaki Kouno ,  Yoshihiro Furuta ,  Eiji Tamaoka ,  Kazuhiro Inoue

IPC分类号： G02F1/1337

CPC分类号： G02F1/133753 ,  G02F1/133723 ,  G02F1/133788 ,  G02F2001/133761

摘要： A liquid crystal display comprising a liquid crystal and a polyimide alignment layer for orienting the liquid crystal, wherein the polyimide alignment layer has a plurality of regions which are at different imidiation ratios, whereby liquid crystal portions corresponding to the respective regions are oriented at different pretilt angles which are responsive to the imidiation ratios.

摘要翻译： 一种液晶显示器，包括液晶和用于使液晶取向的聚酰亚胺取向层，其中聚酰亚胺取向层具有多个不同的亚胺化比例的区域，由此对应于各个区域的液晶部分以不同的预倾斜 响应于亚胺化比例的角度。

公开(公告)号：US5880802A

公开(公告)日：1999-03-09

申请号：US622840

申请日：1996-03-27

申请人： Hiroaki Kouno ,  Susumo Oima ,  Yasuo Segawa ,  Norio Tabuchi ,  Shouzou Ohura ,  Hiroki Hamada ,  Kiyoshi Yoneda

发明人： Hiroaki Kouno ,  Susumo Oima ,  Yasuo Segawa ,  Norio Tabuchi ,  Shouzou Ohura ,  Hiroki Hamada ,  Kiyoshi Yoneda

IPC分类号： G02F1/1333 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/141

CPC分类号： G02F1/1337 ,  G02F2001/13373

摘要： An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that its surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.

摘要翻译： 有源矩阵液晶显示器通过抑制由视频线引起的取向膜的不规则性而改善其对比度，从而减少显示电极上的反向区域。 有源矩阵液晶显示器具有直接或间接地形成在第一基板上的第一和第二相对基板，视频线，有源元件和显示电极以及形成在视频线上或上方的取向膜， 有源元件和显示电极。 取向膜形成为使得其表面相对于视频线和显示电极之间的显示电极表面处于不大于10.5°的倾斜角。

公开(公告)号：US20050130436A1

公开(公告)日：2005-06-16

申请号：US10988042

申请日：2004-11-12

申请人： Yoshiyuki Nozawa ,  Kazuo Kasai ,  Hiroaki Kouno

发明人： Yoshiyuki Nozawa ,  Kazuo Kasai ,  Hiroaki Kouno

IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/30655

摘要： A method for etching a silicon substrate is presented in which fast etching speed and etching structures with smooth and perpendicular wall surfaces are achieved. In the etching step, a constant electric power is applied to the silicon substrate to provide a bias potential. Using a mixture of SF6 gas and fluorocarbon gas, there is a step mainly for the progression of dry etching of the etching ground surface. Similarly, using a mixture gas, there is a step mainly for forming a protective layer on the structure surfaces which are perpendicular with respect to the etching ground surface. These two steps are repeated one after the other. In the step for dry etching, the mixture gas is 5-12 volume of fluorocarbon gas with respect to 100 volume SF6 gas. The mixture gas in the protective film formation step is a mixture of 2-5 volume of SF6 gas with respect to 100 volume fluorocarbon gas.

摘要翻译： 提出了一种用于蚀刻硅衬底的方法，其中实现了具有平滑和垂直壁表面的快速蚀刻速度和蚀刻结构。 在蚀刻步骤中，向硅衬底施加恒定电力以提供偏置电位。 使用SF 6气体和碳氟化合物气体的混合物，主要用于蚀刻底面的干蚀刻进行。 类似地，使用混合气体时，主要用于在相对于蚀刻接地面垂直的结构表面上形成保护层的步骤。 这两个步骤重复一遍。 在干蚀刻步骤中，混合气体相对于100体积SF 6气体为5-12体积的碳氟化合物气体。 保护膜形成步骤中的混合气体是相对于100体积碳氟化合物气体的2-5体积的SF 6气体的混合物。

公开(公告)号：US07220678B2

公开(公告)日：2007-05-22

申请号：US10988042

申请日：2004-11-12

申请人： Yoshiyuki Nozawa ,  Kazuo Kasai ,  Hiroaki Kouno

发明人： Yoshiyuki Nozawa ,  Kazuo Kasai ,  Hiroaki Kouno

IPC分类号： H01L21/302

CPC分类号： H01L21/30655

摘要： A method for etching a silicon substrate is presented in which fast etching speed and etching structures with smooth and perpendicular wall surfaces are achieved. In the etching step, a constant electric power is applied to the silicon substrate to provide a bias potential. Using a mixture of SF6 gas and fluorocarbon gas, there is a step mainly for the progression of dry etching of the etching ground surface. Similarly, using a mixture gas, there is a step mainly for forming a protective layer on the structure surfaces which are perpendicular with respect to the etching ground surface. These two steps are repeated one after the other. In the step for dry etching, the mixture gas is 5–12 volume of fluorocarbon gas with respect to 100 volume SF6 gas. The mixture gas in the protective film formation step is a mixture of 2–5 volume of SF6 gas with respect to 100 volume fluorocarbon gas.

摘要翻译： 提出了一种用于蚀刻硅衬底的方法，其中实现了具有平滑和垂直壁表面的快速蚀刻速度和蚀刻结构。 在蚀刻步骤中，向硅衬底施加恒定电力以提供偏置电位。 使用SF 6气体和碳氟化合物气体的混合物，主要用于蚀刻底面的干蚀刻进行。 类似地，使用混合气体时，主要用于在相对于蚀刻接地面垂直的结构表面上形成保护层的步骤。 这两个步骤重复一遍。 在干蚀刻步骤中，混合气体相对于100体积SF 6气体为5-12体积的碳氟化合物气体。 保护膜形成步骤中的混合气体是相对于100体积碳氟化合物气体的2-5体积的SF 6气体的混合物。

公开(公告)号：US6008874A

公开(公告)日：1999-12-28

申请号：US138543

申请日：1998-08-24

申请人： Hiroaki Kouno ,  Susumu Oima ,  Yasuo Segawa ,  Norio Tabuchi ,  Shouzou Ohura ,  Hiroki Hamada ,  Kiyoshi Yoneda

发明人： Hiroaki Kouno ,  Susumu Oima ,  Yasuo Segawa ,  Norio Tabuchi ,  Shouzou Ohura ,  Hiroki Hamada ,  Kiyoshi Yoneda

IPC分类号： G02F1/1337 ,  G02F1/136

CPC分类号： G02F1/1337 ,  G02F2001/13373

摘要： An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that is surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.

摘要翻译： 有源矩阵液晶显示器通过抑制由视频线引起的取向膜的不规则性而改善其对比度，从而减少显示电极上的反向区域。 有源矩阵液晶显示器具有直接或间接地形成在第一基板上的第一和第二相对基板，视频线，有源元件和显示电极以及形成在视频线上或上方的取向膜， 有源元件和显示电极。 取向膜形成为相对于视频线和显示电极之间的显示电极表面的倾斜角不大于10.5°的角度。