公开(公告)号：US20210217620A1

公开(公告)日：2021-07-15

申请号：US16769179

申请日：2018-12-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji KAGAWA ,  Takayuki TOSHIMA

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/02

Abstract: A substrate processing method includes (A) supplying to the substrate a first processing liquid containing a removing agent for deposit, a solvent having a boiling point lower than that of the removing agent and a thickener, (B), after (A), supplying to the substrate a second processing liquid containing an organic polymer to be a gas diffusion barrier film, (C), after (B), heating the substrate at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent to promote evaporation of the solvent and reaction between the deposit and the removing agent, and (D), after (C), supplying a rinsing liquid to the substrate to remove the deposit from the substrate. The gas diffusion barrier film prevents a gaseous reactive product generated by the reaction in (C) from diffusing around the substrate.

公开(公告)号：US20170320107A1

公开(公告)日：2017-11-09

申请号：US15491058

申请日：2017-04-19

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: B08B3/10 ,  H01L21/67

CPC classification number: B08B3/10 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

公开(公告)号：US20140020721A1

公开(公告)日：2014-01-23

申请号：US13941836

申请日：2013-07-15

Applicant: Tokyo Electron Limited ,  Kabushiki Kaisha Toshiba

Inventor： Hidekazu HAYASHI ,  Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: H01L21/02

CPC classification number: H01L21/02101 ,  B08B7/0021 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67109

Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state.

Abstract translation: 一种基材处理方法和装置，用于在将基材输送到处理容器中时防止基材的防干燥含氟有机溶剂的蒸发，并且可以防止处理容器中的含氟有机溶剂的分解。 其表面被第一含氟有机溶剂覆盖的基材被携带到处理容器中。 通过形成第一含氟有机溶剂和第二含氟有机溶剂的混合物的高压流体气氛，第一含氟有机溶剂的沸点低于第一氟 在处理容器中，例如， 通过将第二含氟有机溶剂的高压流体供给到处理容器中。 此后，将处于高压流体或气体状态的流体从处理容器排出，从而获得处于干燥状态的基板。

公开(公告)号：US20200098593A1

公开(公告)日：2020-03-26

申请号：US16606660

申请日：2018-02-02

Applicant: TOKYO OHKA KOGYO CO., LTD. ,  TOKYO ELECTRON LIMITED

Inventor： Isao HIRANO ,  Shoichi TERADA ,  Junji NAKAMURA ,  Takayuki TOSHIMA

IPC: H01L21/67 ,  C11D7/08 ,  C11D7/34 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/324

Abstract: A washing method, a washing device, a storage medium, and a washing composition for enabling effective removal of a layer to be processed by decomposing or degenerating the layer to be processed at a higher temperature than conventionally. In a state where a substrate provided with a layer to be processed is heated, the substrate is supplied with vapor of a component that can decompose the layer to be processed, and thereafter the layer to be processed that has reacted with the component is removed from the substrate. As the component, a nitric acid or a sulfonic acid is preferable. As the sulfonic acid, a fluorinated alkyl sulfonic acid is preferable.

公开(公告)号：US20210284930A1

公开(公告)日：2021-09-16

申请号：US16336658

申请日：2017-09-22

Applicant: TOKYO OHKA KOGYO CO., LTD. ,  TOKYO ELECTRON LIMITED

Inventor： Isao HIRANO ,  Kazumasa WAKIYA ,  Shoichi TERADA ,  Junji NAKAMURA ,  Takayuki TOSHIMA

IPC: C11D1/62 ,  C11D1/12 ,  C11D3/37 ,  G03F7/42 ,  G03F7/11 ,  G03F7/039 ,  C11D11/00

Abstract: A cleaning composition which can remove a layer of interest using a conventional apparatus, such as a coater, a baking furnace and a cleaning chamber, installed in semiconductor manufacturing equipment while preventing the damage or deformation of layers other than the layer of interest, such as a substrate and an interlayer insulation film; a cleaning method using the cleaning composition; and a method for producing a semiconductor employing the cleaning method. A layer of interest formed on a substrate is cleaned with a cleaning composition containing a component capable of decomposing the layer of interest and a film-forming polymer. An example of the layer of interest is a hard mask film. An example of the component is at least one of a basic compound and an acidic compound.

公开(公告)号：US20130333726A1

公开(公告)日：2013-12-19

申请号：US13910270

申请日：2013-06-05

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: B08B3/10

CPC classification number: B08B3/10 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

Abstract translation: 本公开提供了一种基板处理装置，包括：处理室，被配置为处理基板; 流体供给源，其构造成以预定压力供给用于所述基板的处理中使用的基板处理流体; 恒定压力供给路径，被配置为以预定压力将所述基板处理流体从所述流体供给源供给到所述处理室，而不增加所述基板处理液体的压力; 增压压力供给路径，被配置为通过增压机构将衬底处理流体从流体供给源的压力升高到预定压力，并将增压的衬底处理流体供应到处理室; 以及控制单元，被配置为切换恒压供给路径和升压压力供给路径。