公开(公告)号：US20240327984A1

公开(公告)日：2024-10-03

申请号：US18615087

申请日：2024-03-25

Applicant: Tokyo Electron Limited

Inventor： Tuhin Shuvra Basu ,  Hiroto FUJIKAWA ,  Yutaka MOTOYAMA ,  Keita KUMAGAI

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52

CPC classification number: C23C16/45553 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/52

Abstract: A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and forming the silicon film on the first film and on the second film by supplying a silane-based gas having a silicon number 1 to the substrate having the growth inhibiting gas physically adsorbed on the first film.

公开(公告)号：US20250029843A1

公开(公告)日：2025-01-23

申请号：US18764779

申请日：2024-07-05

Applicant: Tokyo Electron Limited

Inventor： Hiroto FUJIKAWA ,  Tuhin Shuvra Basu

IPC: H01L21/311 ,  H01L21/324 ,  H01L21/67

Abstract: A substrate-processing method includes (a) providing a substrate including a silicon oxide film on a surface of the substrate; (b) supplying a first gas to the surface of the substrate, the first gas containing a hydrogen fluoride gas and containing no basic gas; and (c) after (b), supplying a second gas to the surface of the substrate, the second gas containing both a hydrogen fluoride gas and a basic gas.

公开(公告)号：US20240128081A1

公开(公告)日：2024-04-18

申请号：US18481492

申请日：2023-10-05

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro TAKEZAWA ,  Toru KANAZAWA ,  Yosuke WATANABE ,  Tatsuya MIYAHARA ,  Yuki TANABE ,  Daisuke SUZUKI ,  Masahisa WATANABE ,  Keisuke SUZUKI ,  Tuhin Shuvra Basu

IPC: H01L21/02 ,  C23C16/24

CPC classification number: H01L21/02672 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592

Abstract: A film forming method includes preparing a substrate having an amorphous silicon film on a surface thereof, diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film, and forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.