公开(公告)号：US20220139776A1

公开(公告)日：2022-05-05

申请号：US17507136

申请日：2021-10-21

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  David L. O'Meara ,  Hisashi Higuchi ,  Hirokazu Aizawa ,  Omid Zandi ,  Cory Wajda ,  Gerrit J. Leusink

IPC: H01L21/768 ,  H01L21/285

Abstract: A method for filling recessed features with a low-resistivity metal includes providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature, pre-treating the substrate with a surface modifier that increases metal deposition selectivity on the second layer relative to on the first layer, and depositing a metal layer on the substrate by vapor phase deposition, where the metal layer is preferentially deposited on the second layer in the recessed feature. The method further includes removing metal nuclei deposited on the first layer, including on a field area and on sidewalls of the first layer in the recessed feature, to selectively form the metal layer on the second layer in the recessed feature, where the removing includes exposing the patterned substrate to an etching gas containing ozone.

公开(公告)号：US20240153781A1

公开(公告)日：2024-05-09

申请号：US18385522

申请日：2023-10-31

Applicant: Tokyo Electron Limited

Inventor： Hisashi Higuchi ,  Kai-Hung Yu ,  Cory Wajda ,  Gyanaranjan Pattanaik ,  Kandabara Tapily ,  Gerrit Leusink ,  Robert Clark

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/32136 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02337 ,  H01L21/31122

Abstract: Embodiments of methods are provided for thermal dry etching of a ruthenium (Ru) metal layer. In the disclosed embodiments, a substrate containing a Ru metal layer formed thereon is exposed to a gas pulse sequence, while the substrate is held at a relatively high substrate temperature (e.g., a temperature greater than or equal to about 160° C.), to provide thermal etching of the Ru metal layer. As described further herein, the gas pulse sequence may generally include a plurality of gas pulses, which are supplied to the substrate sequentially with substantially no overlap between gas pulses. The gas pulses supplied to the substrate form: (i) volatile reaction products that are vaporized from the Ru surface, and (ii) non-volatile oxide surface layers that are removed from the Ru surface by the next gas pulse, resulting in atomic layer etching (ALE) of the Ru metal layer.

公开(公告)号：US10734221B2

公开(公告)日：2020-08-04

申请号：US16028656

申请日：2018-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taiki Kato ,  Hisashi Higuchi ,  Kosuke Yamamoto ,  Ayuta Suzuki ,  Kazuyoshi Matsuzaki ,  Yuji Seshimo ,  Susumu Takada ,  Yoshihiro Takezawa

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L29/423 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  H01L21/28 ,  H01L49/02 ,  H01L21/443

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.