Plasma Processing Apparatus
    1.
    发明公开

    公开(公告)号:US20240339300A1

    公开(公告)日:2024-10-10

    申请号:US18622596

    申请日:2024-03-29

    Abstract: A plasma processing apparatus comprises a processing chamber having a processing space, an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied to the processing space, a dielectric having a first surface facing the processing space, an electromagnetic wave supply configured to supply the electromagnetic waves to the processing space via the dielectric, and a resonator array structure disposed along the first surface of the dielectric in the processing chamber. The resonator array structure includes a plurality of resonators resonating with magnetic field components of the electromagnetic waves, having a size smaller than a wavelength of the electromagnetic waves, and arranged in a direction along the first surface of the dielectric. The electromagnetic wave supply is configured to supply magnetic field components perpendicular to a plane on which the plurality of resonators are arranged.

    PLASMA PROCESSING APPARATUS
    3.
    发明公开

    公开(公告)号:US20240186113A1

    公开(公告)日:2024-06-06

    申请号:US18515099

    申请日:2023-11-20

    CPC classification number: H01J37/32247

    Abstract: There is a plasma processing apparatus comprising: a processing chamber configured to provide a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied to the processing space; a dielectric provided with a first surface facing the processing space; and an electromagnetic wave supply portion configured to supply the electromagnetic waves to the processing space through the dielectric, wherein the dielectric includes: a cell serving as a plasma generation space on the first surface side, a plurality of grooves formed on a second surface opposite to the first surface, the grooves surrounding the cell without communicating with the cell; and resonators including C-shaped ring members made of conductors inserted into the plurality of grooves, wherein the resonators are capable of resonating with magnetic field components of the electromagnetic waves and have a size smaller than a wavelength of the electromagnetic wave.

    MICROWAVE AUTOMATIC MATCHER AND PLASMA PROCESSING APPARATUS
    5.
    发明申请
    MICROWAVE AUTOMATIC MATCHER AND PLASMA PROCESSING APPARATUS 审中-公开
    微波自动匹配器和等离子体加工设备

    公开(公告)号:US20160268101A1

    公开(公告)日:2016-09-15

    申请号:US15064698

    申请日:2016-03-09

    CPC classification number: H01J37/32311 H01J37/32229 H01J37/32917

    Abstract: A microwave automatic matcher includes a movable body, a driving unit, a matching control unit, a reflection coefficient measuring unit, and a setting unit. The matching control unit consecutively moves the movable body from a start position in one direction by a distance of a difference between the start position and the target position in a matching operation carried out for the plasma process and then variably controls the position of the movable body until the measurement of the reflection coefficient obtained by the reflection coefficient measuring unit falls within the first neighboring range by monitoring the measurement of the reflection coefficient.

    Abstract translation: 微波自动匹配器包括可移动体,驱动单元,匹配控制单元,反射系数测量单元和设置单元。 匹配控制单元在对于等离子体处理进行的匹配操作中,使可移动体从一个方向的起始位置连续地移动开始位置和目标位置之间的差的距离,然后可变地控制可移动体的位置 直到通过监视反射系数的测量,由反射系数测量单元获得的反射系数的测量落入第一相邻范围内。

    Plasma Processing Apparatus and Method for Measuring Resonance Frequency

    公开(公告)号:US20250095973A1

    公开(公告)日:2025-03-20

    申请号:US18967551

    申请日:2024-12-03

    Abstract: A plasma processing apparatus comprising: a processing chamber; an electromagnetic wave generator; a resonating structure formed by arranging resonators that are capable of resonating with a magnetic field component of electromagnetic waves; a measurement part configured to measure, for each frequency, a power of the electromagnetic waves traveling from the electromagnetic wave generator to the resonating structure and a power of transmitted waves, reflected waves, or scattered waves of the electromagnetic waves in the resonating structure; and a controller that performs measuring the power of the electromagnetic waves and the power of the transmitted waves, the reflected waves, or the scattered waves with the measurement part, and calculating a resonance frequency of the resonating structure based on frequency distribution of characteristic values of the resonating structure, calculated from the power of the electromagnetic waves and the power of the transmitted waves, the reflected waves, or the scattered waves.

    MICROWAVE OUTPUT DEVICE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20190341228A1

    公开(公告)日:2019-11-07

    申请号:US16396831

    申请日:2019-04-29

    Abstract: A microwave output device include: a microwave generation unit configured to generate a microwave, power of the microwave being pulse-modulated such that a pulse frequency, a duty ratio, a high level, and a low level respectively corresponding to a setting pulse frequency, a setting duty ratio, high level setting power, and low level setting power given from a controller; and an output unit configured to output a microwave propagating from the microwave generation unit, wherein the microwave generation unit alternately generates a microwave having a center frequency and a bandwidth respectively corresponding to a setting frequency and a setting bandwidth given from the controller and a microwave having a single frequency peak at a center frequency corresponding to a setting frequency given from the controller, in synchronization with switching between a high level and a low level of the power.

    MICROWAVE CONTROL METHOD
    8.
    发明申请

    公开(公告)号:US20180019103A1

    公开(公告)日:2018-01-18

    申请号:US15646290

    申请日:2017-07-11

    Abstract: A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method incudes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.

    MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE SUPPLYING METHOD
    9.
    发明申请
    MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE SUPPLYING METHOD 审中-公开
    微波等离子体加工设备和微波炉供应方法

    公开(公告)号:US20160172163A1

    公开(公告)日:2016-06-16

    申请号:US15051816

    申请日:2016-02-24

    Abstract: Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space; a microwave generator configured to generate microwaves; a distributor configured to distribute the microwaves to a plurality of waveguides; an antenna installed in the processing container and to radiate the microwaves distributed to the plurality of waveguides to the processing space; a monitor unit configured to monitor a voltage of each of the plurality of waveguides; a storage unit configured to store a difference between a monitor value of the voltage monitored by the monitor unit and a predetermined reference value of the voltage and a control value of a distribution ratio of the distributor corresponding to the difference; and a control unit configured to acquire the control value of the distribution ratio of the distributor from the storage unit and to control the distribution ratio of the distributor.

    Abstract translation: 公开了一种微波等离子体处理装置,包括:处理容器,其构造成限定处理空间; 构造成产生微波的微波发生器; 配置成将微波分布到多个波导的分配器; 安装在处理容器中并将分布在多个波导上的微波辐射到处理空间的天线; 监视器单元,被配置为监视所述多个波导中的每一个的电压; 存储单元,其被配置为存储由所述监视单元监视的电压的监视值与所述电压的预定参考值和所述分配器对应于所述差异的分配比率的控制值之间的差; 以及控制单元,被配置为从所述存储单元获取所述分配器的分配比率的控制值,并且控制所述分配器的分配比。

    MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE SUPPLY METHOD
    10.
    发明申请
    MICROWAVE PLASMA PROCESSING APPARATUS AND MICROWAVE SUPPLY METHOD 有权
    微波等离子体加工设备和微波炉供应方法

    公开(公告)号:US20150108897A1

    公开(公告)日:2015-04-23

    申请号:US14512655

    申请日:2014-10-13

    Abstract: Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space a microwave generator configured to generate microwaves for generating plasma of a processing gas introduced into the processing space, a distributor configured to distribute the microwaves to a plurality of waveguides using a variable distribution ratio, an antenna installed in the processing container to seal the processing space and configured to radiate the microwaves distributed to each of the plurality of waveguides by the distributor to the processing space, a monitor unit configured to monitor a power of the microwaves distributed to each of the plurality of waveguides by the distributor, and a distribution ratio control unit configured to correct the distribution ratio used for distribution of the microwaves by the distributor based on a difference between a ratio of the power of the microwaves monitored by the monitor unit and a previously designated distribution ratio.

    Abstract translation: 公开了一种微波等离子体处理装置,包括:处理容器,被配置为限定处理空间,微波发生器被配置为产生用于产生引入到处理空间中的处理气体的等离子体的微波;分配器,被配置为将微波分布到多个波导 使用可变分配比率,安装在所述处理容器中的天线以密封所述处理空间并且被配置为将由所述分配器分配到所述多个波导中的每一个的微波辐射到所述处理空间;监视单元,被配置为监视所述处理空间的功率 通过分配器分配给多个波导中的每一个的微波,以及分配比率控制单元,其被配置为基于由所述分配器监视的微波的功率的比率来校正由分配器用于分配微波的分配比率 监控单元和以前指定的 分配比例。

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