公开(公告)号：US20150079790A1

公开(公告)日：2015-03-19

申请号：US14356809

申请日：2012-11-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiichi Nishimura ,  Tadashi Kotsugi ,  Fumiko Yamashita ,  Kenji Adachi

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/3088 ,  H01J37/32091 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/32137

Abstract: This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used.

Abstract translation: 该半导体器件制造方法具有：成膜步骤，其中形成氮化硅层或氧化硅层，使得形成在衬底上并图案化的含硅层的侧壁部分被覆盖 与氮化硅层或氧化硅层; 以及等离子体蚀刻步骤，其中选择性地除去含硅层，并且留下形成在侧壁部分上的氮化硅层或氧化硅层。 在等离子体蚀刻步骤中，使用含有SF 6气体的蚀刻气体。

公开(公告)号：US09576829B1

公开(公告)日：2017-02-21

申请号：US15336856

申请日：2016-10-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi Marumoto ,  Koji Takayanagi ,  Kenji Adachi

IPC: B01D19/00 ,  H01L21/67 ,  B01D36/00

CPC classification number: H01L21/6715 ,  B01D19/0031 ,  B01D19/0036 ,  B01D36/001 ,  H01L21/67017

Abstract: According to an embodiment of the present disclosure, a process liquid supply apparatus operating method is provided. The method includes filling a filter unit with a process liquid from an upstream side of the filter unit to a downstream side of the filter unit after newly mounting or replacing the filter unit and repeating a depressurization filtering process and a pressurization filtering process for a predetermined number of times. The depressurization filtering process depressurizes the process liquid in the downstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit. The pressurization filtering process pressurizes the process liquid from the upstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit.

Abstract translation: 根据本公开的实施例，提供了一种处理液体供应装置操作方法。 该方法包括在新安装或更换过滤器单元之后，将过滤液从过滤器单元的上游侧填充到过滤器单元的下游侧，并重复进行预定数量的减压过滤和加压过滤处理 的时代。 减压过滤处理对过滤器单元的下游侧的处理液进行减压，从而允许处理液体透过过滤器单元。 加压过滤过程从过滤器单元的上游侧对工艺液体进行加压，从而允许处理液体渗透过滤单元。

公开(公告)号：US09245764B2

公开(公告)日：2016-01-26

申请号：US14356809

申请日：2012-11-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiichi Nishimura ,  Tadashi Kotsugi ,  Fumiko Yamashita ,  Kenji Adachi

IPC: H01L21/311 ,  H01L21/308 ,  H01L21/033 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/3088 ,  H01J37/32091 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L21/32137

Abstract: This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used.

Abstract translation: 该半导体器件制造方法具有：成膜步骤，其中形成氮化硅层或氧化硅层，使得形成在衬底上并图案化的含硅层的侧壁部分被覆盖 与氮化硅层或氧化硅层; 以及等离子体蚀刻步骤，其中选择性地除去含硅层，并且留下形成在侧壁部分上的氮化硅层或氧化硅层。 在等离子体蚀刻步骤中，使用含有SF 6气体的蚀刻气体。

公开(公告)号：US12094737B2

公开(公告)日：2024-09-17

申请号：US16930959

申请日：2020-07-16

Applicant: Tokyo Electron Limited

Inventor： Masayuki Kajiwara ,  Katsunori Ichino ,  Daisuke Ishimaru ,  Takuya Tajiri ,  Atsushi Yamamoto ,  Masato Imamura ,  Tomohiko Muta ,  Tetsuro Iriyama ,  Takeaki Sakamoto ,  Hiroki Okaguchi ,  Kenji Adachi

IPC: H01L21/67 ,  B05B1/30 ,  B05B9/04 ,  B05B15/40

CPC classification number: H01L21/6715 ,  B05B1/30 ,  B05B9/0406 ,  B05B15/40

Abstract: A substrate processing apparatus includes a discharge part including a nozzle configured to discharge a processing liquid onto a substrate; a liquid feeder configured to feed the processing liquid to the discharge part; a replenishment part configured to replenish the liquid feeder with the processing liquid to be fed to the discharge part; a connector including a switching valve configured to open/close a flow path between the replenishment part and the liquid feeder; a filter configured to remove foreign matters contained in the processing liquid; a replenishment preparation part configured to open the switching valve after reducing a pressure difference between the inside of the replenishment part and the liquid feeder; and a replenishment controller configured to start replenishment of the processing liquid from the replenishment part to the liquid feeder in a state in which the switching valve is opened by the replenishment preparation part.

公开(公告)号：US09508574B2

公开(公告)日：2016-11-29

申请号：US13956507

申请日：2013-08-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi Marumoto ,  Koji Takayanagi ,  Kenji Adachi

IPC: B01D19/00 ,  H01L21/67 ,  B01D36/00

CPC classification number: H01L21/6715 ,  B01D19/0031 ,  B01D19/0036 ,  B01D36/001 ,  H01L21/67017

Abstract: According to an embodiment of the present disclosure, a process liquid supply apparatus operating method is provided. The method includes filling a filter unit with a process liquid from an upstream side of the filter unit to a downstream side of the filter unit after newly mounting or replacing the filter unit and repeating a depressurization filtering process and a pressurization filtering process for a predetermined number of times. The depressurization filtering process depressurizes the process liquid in the downstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit. The pressurization filtering process pressurizes the process liquid from the upstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit.

Abstract translation: 根据本公开的实施例，提供了一种处理液体供应装置操作方法。 该方法包括在新安装或更换过滤器单元之后，将过滤液从过滤器单元的上游侧填充到过滤器单元的下游侧，并重复进行预定数量的减压过滤和加压过滤处理 的时代。 减压过滤处理对过滤器单元的下游侧的处理液进行减压，从而允许处理液体透过过滤器单元。 加压过滤过程从过滤器单元的上游侧对工艺液体进行加压，从而允许处理液体渗透过滤单元。