公开(公告)号：US20140150882A1

公开(公告)日：2014-06-05

申请号：US14176237

申请日：2014-02-10

Applicant: Tokyo Electron Limited

Inventor： Naomi ONODERA ,  Kiyohiko GOKON ,  Jun SATO

IPC: F17D3/01

CPC classification number: F17D3/01 ,  C23C16/402 ,  C23C16/50 ,  C23C16/52 ,  H01L21/67109 ,  Y10T137/0324

Abstract: A disclosed plasma process apparatus is disclosed that applies a plasma process to an object to be processed, including a cylindrical processing container configured to be evacuatable to vacuum, a holding unit configured to hold plural objects to be processed and inserted into and to be extracted from the cylindrical processing container, a gas supplying unit configured to supply a gas into the processing container, an activating unit configured to be located along a longitudinal direction of the processing container and to activate the gas by plasma generated by a high frequency power, a cylindrical shield cover configured to surround a periphery of the processing container and to be connected to ground for shielding from high frequency, and a cooling device configured to cause the cooling gas to flow through a space between the cylindrical shield cover and the cylindrical processing container during the plasma process.

Abstract translation: 公开了一种公开的等离子体处理装置，其将等离子体处理应用于被处理物体，该等离子体处理装置包括被配置为可抽真空的圆柱形处理容器，保持单元，其被配置为容纳待处理的多个物体并将其从 圆筒状处理容器，构成为向处理容器供给气体的气体供给部，具有沿着处理容器的长度方向配置并通过高频电力产生的等离子体活化气体的启动部， 屏蔽罩，其构造成围绕处理容器的周边并且被连接到地面以用于高频屏蔽;以及冷却装置，其被配置为在所述冷却装置期间使所述冷却气体流过所述圆柱形屏蔽盖和所述圆柱形处理容器之间的空间 等离子体工艺。

公开(公告)号：US20130319332A1

公开(公告)日：2013-12-05

申请号：US13903331

申请日：2013-05-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kiyohiko GOKON

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  H01L21/67017 ,  H01L21/6719

Abstract: According to an embodiment of the present disclosure, a substrate processing apparatus including a housing is provided. The housing having an internal atmosphere of a reduced oxygen concentration includes a box structure configured to accommodate a substrate holder which receives a plurality of substrates therein and including a first gap and a second gap. Further, the housing includes an inert gas pipe connected to the box structure, and configured to supply an inert gas to the box structure, a cover member mounted in the box structure, and a buffer space formed between an internal space of the box structure and the cover member.

Abstract translation: 根据本公开的实施例，提供了包括壳体的基板处理装置。 具有减少的氧浓度的内部气氛的壳体包括盒结构，其构造成容纳在其中容纳多个基底并且包括第一间隙和第二间隙的衬底保持器。 此外，壳体包括连接到盒结构的惰性气体管道，并且构造成将惰性气体供应到箱体结构，安装在箱体结构中的盖构件和形成在箱结构体的内部空间之间的缓冲空间和 盖构件。

公开(公告)号：US20230253230A1

公开(公告)日：2023-08-10

申请号：US18159306

申请日：2023-01-25

Applicant: Tokyo Electron Limited

Inventor： Masato KADOBE ,  Hiromi NITADORI ,  Kaoru SATO ,  Kiyohiko GOKON

IPC: H01L21/677 ,  H01L21/67

CPC classification number: H01L21/67781 ,  H01L21/67742 ,  H01L21/67017 ,  H01L21/6719

Abstract: A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first horizontal direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. A first maintenance area, used for attending to a maintenance of the plurality of batch processing units, is provided above the exhaust unit.

公开(公告)号：US20230253221A1

公开(公告)日：2023-08-10

申请号：US18159295

申请日：2023-01-25

Applicant: Tokyo Electron Limited

Inventor： Masato KADOBE ,  Hiromi NITADORI ,  Kaoru SATO ,  Kiyohiko GOKON

IPC: H01L21/67

CPC classification number: H01L21/67201

Abstract: A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. The gas supply unit and the exhaust unit are provided on one side of the processing container.