公开(公告)号：US20140209028A1

公开(公告)日：2014-07-31

申请号：US14163135

申请日：2014-01-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kentaro OSHIMO ,  Masato KOAKUTSU ,  Hiroko SASAKI ,  Kaoru SATO ,  Hiroaki IKEGAWA

IPC: H01L21/67

CPC classification number: H01L21/68771 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45551 ,  H01L21/68764

Abstract: A film deposition apparatus includes a turntable; a first process gas supply portion; a gas nozzle that supplies a second process gas; a nozzle cover that is provided to cover the gas nozzle; a separation gas supply portion, wherein the nozzle cover includes an upper plate portion, and an upstream sidewall portion and a downstream sidewall portion that extend downward from upstream and downstream edge portions of the upper plate portion in a rotational direction of the turntable, respectively, wherein an inner surface of the upstream sidewall portion is formed as an inclined surface that is inclined with respect to a surface of the turntable, and wherein an angle θ1 between the inner surface of the upstream sidewall portion and the surface of the turntable is smaller than an angle θ2 between an inner surface of the downstream sidewall portion and the surface of the turntable.

Abstract translation: 一种成膜装置，包括转盘; 第一处理气体供给部; 提供第二处理气体的气体喷嘴; 喷嘴盖，其设置成覆盖所述气体喷嘴; 分离气体供给部分，其中喷嘴盖包括上板部分，以及分别在转台的旋转方向上从上板部分的上游和下游边缘部分向下延伸的上游侧壁部分和下游侧壁部分， 其特征在于，所述上游侧壁部的内表面形成为相对于所述转盘的表面倾斜的倾斜面，并且所述上游侧壁部的内表面与所述转台的表面之间的角度＆ 小于角度和角度; 2在下游侧壁部分的内表面和转台的表面之间。

公开(公告)号：US20230253230A1

公开(公告)日：2023-08-10

申请号：US18159306

申请日：2023-01-25

Applicant: Tokyo Electron Limited

Inventor： Masato KADOBE ,  Hiromi NITADORI ,  Kaoru SATO ,  Kiyohiko GOKON

IPC: H01L21/677 ,  H01L21/67

CPC classification number: H01L21/67781 ,  H01L21/67742 ,  H01L21/67017 ,  H01L21/6719

Abstract: A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first horizontal direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. A first maintenance area, used for attending to a maintenance of the plurality of batch processing units, is provided above the exhaust unit.

公开(公告)号：US20230253221A1

公开(公告)日：2023-08-10

申请号：US18159295

申请日：2023-01-25

Applicant: Tokyo Electron Limited

Inventor： Masato KADOBE ,  Hiromi NITADORI ,  Kaoru SATO ,  Kiyohiko GOKON

IPC: H01L21/67

CPC classification number: H01L21/67201

Abstract: A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. The gas supply unit and the exhaust unit are provided on one side of the processing container.

公开(公告)号：US20150078864A1

公开(公告)日：2015-03-19

申请号：US14482047

申请日：2014-09-10

Applicant: Tokyo Electron Limited

Inventor： Kaoru SATO ,  Kiichi TAKAHASHI

IPC: C23C16/458 ,  H01L21/67 ,  C23C16/455 ,  H01L21/68

CPC classification number: C23C16/4586 ,  C23C16/45521 ,  C23C16/45551 ,  C23C16/45561 ,  C23C16/4584 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68771

Abstract: A substrate processing apparatus is provided to deposit a film including a reaction product on a substrate by repeating a supply cycle of sequentially supplying at least two kinds of reaction gases reactable with each other to a surface of the substrate in a chamber. The substrate processing apparatus includes a turntable provided in the chamber and having a concave portion for receiving the substrate formed in its surface and through-holes formed in the concave portion, a lifting mechanism including lift pins used when transferring the substrate placed on the concave portion, and a control unit configured to control the lifting mechanism. The control unit controls the lifting mechanism to carry the substrate out of the concave portion by moving the lifting pins upward in a vertical direction and inward in a radial direction of the turntable after the lifting pins contact the substrate through the through-holes.

Abstract translation: 提供了一种基板处理装置，通过重复供应循环，将包含反应产物的膜沉积在基板上，该供应循环在室中顺序地将至少两种可反应的反应气体反应到基板的表面。 基板处理装置包括设置在室内的转台，具有用于接收形成在其表面上的基板的凹部和形成在凹部中的通孔的转台，提升机构包括当转印放置在凹部上的基板时使用的升降销 以及控制单元，被配置为控制提升机构。 控制单元通过在提升销通过通孔与基板接触之后，使提升销沿着垂直方向向上移动并且在转台的径向方向向内移动而将基板搬出凹部。