公开(公告)号：US20230390810A1

公开(公告)日：2023-12-07

申请号：US18315722

申请日：2023-05-11

Applicant: Tokyo Electron Limited

Inventor： Tomoya HASEGAWA ,  Koji SASAKI

IPC: B08B5/00 ,  B08B7/00

CPC classification number: B08B5/00 ,  B08B7/0064

Abstract: A cleaning method for removing a deposit in a processing chamber is provided. The cleaning method includes adjusting a temperature in the processing chamber to a first temperature; supplying a first gas including a hydrogen fluoride gas into the processing chamber in which the temperature is adjusted to the first temperature; adjusting the temperature in the processing chamber to a second temperature that is higher than the first temperature; and supplying a second gas including the hydrogen fluoride gas and an ammonia gas into the processing chamber in which the temperature is adjusted to the second temperature.

公开(公告)号：US20230081958A1

公开(公告)日：2023-03-16

申请号：US17944469

申请日：2022-09-14

Applicant: Tokyo Electron Limited

Inventor： Koji SASAKI ,  Katsuyuki HIGASHI ,  Yuji SESHIMO

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/40 ,  C23C16/455

Abstract: A substrate processing method performed by a substrate processing apparatus including: a processing container that processes a substrate; a gas supply that supplies a gas into the processing container; an exhaust device that exhausts a gas from an inside of the processing container; and a gas analyzer that analyzes the gas passing through an exhaust pipe that connects the processing container and the exhaust device. The method includes: performing a processing with a processing gas in the processing container by supplying the processing gas into the processing container; purging the processing gas in the processing container by supplying a purge gas into the processing container; analyzing the processing gas passing through the exhaust pipe by the gas analyzer during the purging the processing gas; and determining a condition of the purging the processing gas based on a result of analyzing the processing gas.

公开(公告)号：US20230096797A1

公开(公告)日：2023-03-30

申请号：US17944625

申请日：2022-09-14

Applicant: Tokyo Electron Limited

Inventor： Koji SASAKI ,  Yuji SESHIMO ,  Katsuyuki HIGASHI

IPC: C23C16/448 ,  C23C16/52

Abstract: A gas management method includes: heating a raw material container that accommodates a raw material, by a heater, thereby generating a vaporized raw material gas; supplying the vaporized raw material gas together with a carrier gas to a processing container that accommodates a substrate, thereby performing a processing on the substrate; and controlling the heater based on a weight of the substrate after the processing on the substrate.

公开(公告)号：US20230047426A1

公开(公告)日：2023-02-16

申请号：US17973876

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Masami OIKAWA ,  Tomoya HASEGAWA ,  Koji SASAKI

IPC: B08B9/093 ,  B08B13/00

Abstract: A cleaning method includes: supplying a cleaning gas in a processing container while continuously increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby executing a cleaning of the processing container by removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the executing the cleaning, for each pressure of the plurality of time points. The executing the cleaning is implemented when the time-dependent data of the concentration of the predetermined gas generated in the continuously increasing the pressure changes from an increasing state to a decreasing state after exceeding a threshold value.

公开(公告)号：US20220062958A1

公开(公告)日：2022-03-03

申请号：US17411372

申请日：2021-08-25

Applicant: Tokyo Electron Limited

Inventor： Masami OIKAWA ,  Tomoya HASEGAWA ,  Koji SASAKI

IPC: B08B9/093 ,  B08B13/00

Abstract: A cleaning method for removing a film deposited in a processing container includes: executing a cleaning of a processing container by supplying a cleaning gas to the processing container while increasing a pressure in the processing container in a stepwise manner at a plurality of time points, thereby removing a film deposited in the processing container; and detecting an end point of the cleaning based on time-dependent data of a concentration of a predetermined gas generated during the execution of the cleaning, for each pressure of the plurality of time points.

公开(公告)号：US20210280411A1

公开(公告)日：2021-09-09

申请号：US17184807

申请日：2021-02-25

Applicant: Tokyo Electron Limited

Inventor： Koji SASAKI ,  Keisuke SUZUKI ,  Tomoya HASEGAWA

IPC: H01L21/02 ,  C23C16/40

Abstract: A deposition method of forming silicon oxide films collectively on a plurality of substrates in a processing container performs a plurality of execution cycles each of which includes: supplying a silicon material gas containing an organoamino-functionalized oligosiloxane compound into the processing container; and supplying an oxidizing gas into the processing container adjusted to a pressure of 1 Torr to 10 Torr (133 Pa to 1333 Pa).

公开(公告)号：US20190043712A1

公开(公告)日：2019-02-07

申请号：US16048493

申请日：2018-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kyungseok KO ,  Koji SASAKI ,  Toshiyuki IKEUCHI

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L27/11575 ,  H01L27/11582

Abstract: A method for forming a silicon oxide film on a tungsten film includes performing a first process of arranging an object to be processed in a processing container kept under a reduced pressure, the object including a tungsten film and a natural oxide film being formed on a surface of the tungsten film, performing a second process of forming a silicon seed layer by adsorbing a silicon-containing gas to the tungsten film, subsequently performing a third process of annealing the object and forming the silicon oxide film by a reaction of the natural oxide film and the silicon seed layer and subsequently performing a fourth process of forming an ALD silicon oxide film by ALD using a silicon-containing gas and an oxygen active species.

公开(公告)号：US20130251896A1

公开(公告)日：2013-09-26

申请号：US13845692

申请日：2013-03-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yamato TONEGAWA ,  Hidenobu SATO ,  Koji SASAKI ,  Nobuhiro TAKAHASHI ,  Keisuke SUZUKI

IPC: B05D5/00

CPC classification number: B05D5/00 ,  C23C16/04 ,  C23C16/345 ,  C23C16/45578

Abstract: Provided is a method of protecting a component of a film forming apparatus, which includes forming a film having a rough surface on a surface of a component which is provided in the interior of the processing chamber of a film forming apparatus such that the surface of the component is coated with the film having the rough surface, the component being exposed to a film forming atmosphere during a film forming process. Forming a film having a rough surface on a surface of the component is in some embodiments performed before or after the film forming process is performed on target substrate and in some cases both before and after.

Abstract translation: 本发明提供了一种保护成膜装置的部件的方法，该方法包括在成膜装置的处理室的内部设置的成分的表面上形成具有粗糙表面的膜， 组分涂覆有具有粗糙表面的膜，该成分在成膜过程中暴露于成膜气氛。 在一些实施例中，在对靶基板进行成膜处理之前或之后，在某些情况下，在前后均形成具有表面粗糙表面的膜。

公开(公告)号：US20140213067A1

公开(公告)日：2014-07-31

申请号：US14167650

申请日：2014-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki MURAKAMI ,  Koji SASAKI ,  Keisuke SUZUKI ,  Yuichiro MOROZUMI

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/45544 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219

Abstract: A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.

Abstract translation: 一种用于在可抽空处理容器内的工件表面上形成由至少含有硅（Si），氧（O），碳（C）和氮（N）的SiOCN层构成的薄膜的成膜方法， 硅烷类气体，烃类气体，氮化气体或氧化性气体，包括形成至少包含Si，C和N的第一膜，形成至少包含Si，C和O的第二膜。形成第一膜和 形成第二膜被设置为循环，并且循环执行一次或多次。