公开(公告)号：US20250019815A1

公开(公告)日：2025-01-16

申请号：US18761495

申请日：2024-07-02

Applicant: Tokyo Electron Limited

Inventor： Shimon OTSUKI ,  Masahiko KAMINISHI ,  Fumiaki HAYASE

IPC: C23C8/12 ,  C23C8/80 ,  H01J37/32 ,  H01L21/02

Abstract: A film-forming method is provided for forming a thin film on a substrate. The film-forming method includes (a) adsorbing a raw material gas onto the substrate, (b) supplying an oxidizing gas to the substrate to oxidize the raw material gas, (c) exposing the substrate to a plasma formed using a plasma gas including an argon gas and an oxygen gas, where (c) includes adjusting an output of the plasma to control crystallinity of the thin film formed on the substrate, and (d) repeating (a), (b), and (c) in this order.

公开(公告)号：US20160111278A1

公开(公告)日：2016-04-21

申请号：US14876967

申请日：2015-10-07

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Fumiaki HAYASE ,  Masahiko KAMINISHI ,  Yu SASAKI ,  Kosuke TAKAHASHI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  H01L21/687

CPC classification number: H01L21/02271 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45551 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A substrate processing method is provided. In the method, a plurality of substrates is placed on a plurality of substrate holding areas provided in a surface of a turntable at predetermined intervals in a circumferential direction, the turntable being provided in a processing chamber. Next, the turntable on which the plurality of substrates is placed is rotated. Then, a fluid is supplied to the surface of the turntable while rotating the turntable. Here, the fluid is supplied to an area between the plurality of substrate holding areas in response to an operation of changing a flow rate of the fluid.

Abstract translation: 提供了基板处理方法。 在该方法中，将多个基板沿圆周方向以预定间隔设置在转盘表面上的多个基板保持区域上，转台设置在处理室中。 接下来，旋转放置有多个基板的转台。 然后，在旋转转盘的同时，向转台的表面供给流体。 这里，响应于改变流体的流量的操作，将流体供给到多个基板保持区域之间的区域。

公开(公告)号：US20160138158A1

公开(公告)日：2016-05-19

申请号：US14933123

申请日：2015-11-05

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Fumiaki HAYASE ,  Masahiko KAMINISHI ,  Kosuke TAKAHASHI ,  Hiroko SASAKI ,  Yu SASAKI

IPC: C23C16/455 ,  B05B1/20

CPC classification number: C23C16/45591 ,  B05B1/205 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45587 ,  H01J37/3244

Abstract: A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

Abstract translation: 用于供应流体的喷嘴包括管状部件，其包括其内部的管状通道和沿管状通道的长度方向形成有多个流体排出孔的流体排出表面。 分隔板设置在管状通道中并沿着长度方向延伸，以便将管状通道分隔成包括流体排放表面的第一区域和不具有流体排放表面的第二区域。 分隔板具有数量少于多个流体排出孔在长度方向上的数量的分配孔。 流体引入通道与第二区域连通。

公开(公告)号：US20140179121A1

公开(公告)日：2014-06-26

申请号：US14108663

申请日：2013-12-17

Applicant: Tokyo Electron Limited

Inventor： Hiroaki IKEGAWA ,  Masahiko KAMINISHI ,  Kosuke TAKAHASHI ,  Masato KOAKUTSU ,  Jun OGAWA

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/68764 ,  H01L21/68771

Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

Abstract translation: 一种使用包括转台安装基板的设备在基板上沉积薄膜的方法，设置有气体供应部分的转盘上表面上方的第一和第二处理区域，在第一和第二处理区域之间的分离气体供应部分和 分离区域，包括通过旋转转盘第一匝来沉积第一氧化物膜，同时供应第一反应气体，来自第二气体供应部分的氧化气体和分离气体; 在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，并且来自第二气体供应部分的氧化气体; 并且至少第二匝旋转以沉积第二氧化物膜，同时从第一气体供应部分提供第二反应气体，来自第二气体供应部分的氧化气体和分离气体。