公开(公告)号：US20150011087A1

公开(公告)日：2015-01-08

申请号：US14308880

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Kentaro OSHIMO ,  Masato KOAKUTSU ,  Hiroko SASAKI ,  Hiroaki IKEGAWA

IPC: H01L21/285

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/32051 ,  H01L28/00

Abstract: A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. A cycle time of the cycle is set equal to or shorter than 0.5 seconds.

Abstract translation: 提供了一种沉积薄膜的方法。 在该方法中，依次提供彼此反应的第一处理气体和第二处理气体，以使第一处理气体和第二处理气体的反应产物的原子层或分子层沉积在基板上 一个室，通过重复一个循环，每循环一次地向基板依次提供第一处理气体和第二处理气体。 循环的循环时间设定为等于或小于0.5秒。

公开(公告)号：US20140209028A1

公开(公告)日：2014-07-31

申请号：US14163135

申请日：2014-01-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kentaro OSHIMO ,  Masato KOAKUTSU ,  Hiroko SASAKI ,  Kaoru SATO ,  Hiroaki IKEGAWA

IPC: H01L21/67

CPC classification number: H01L21/68771 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45551 ,  H01L21/68764

Abstract: A film deposition apparatus includes a turntable; a first process gas supply portion; a gas nozzle that supplies a second process gas; a nozzle cover that is provided to cover the gas nozzle; a separation gas supply portion, wherein the nozzle cover includes an upper plate portion, and an upstream sidewall portion and a downstream sidewall portion that extend downward from upstream and downstream edge portions of the upper plate portion in a rotational direction of the turntable, respectively, wherein an inner surface of the upstream sidewall portion is formed as an inclined surface that is inclined with respect to a surface of the turntable, and wherein an angle θ1 between the inner surface of the upstream sidewall portion and the surface of the turntable is smaller than an angle θ2 between an inner surface of the downstream sidewall portion and the surface of the turntable.

Abstract translation: 一种成膜装置，包括转盘; 第一处理气体供给部; 提供第二处理气体的气体喷嘴; 喷嘴盖，其设置成覆盖所述气体喷嘴; 分离气体供给部分，其中喷嘴盖包括上板部分，以及分别在转台的旋转方向上从上板部分的上游和下游边缘部分向下延伸的上游侧壁部分和下游侧壁部分， 其特征在于，所述上游侧壁部的内表面形成为相对于所述转盘的表面倾斜的倾斜面，并且所述上游侧壁部的内表面与所述转台的表面之间的角度＆ 小于角度和角度; 2在下游侧壁部分的内表面和转台的表面之间。

公开(公告)号：US20160138158A1

公开(公告)日：2016-05-19

申请号：US14933123

申请日：2015-11-05

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Fumiaki HAYASE ,  Masahiko KAMINISHI ,  Kosuke TAKAHASHI ,  Hiroko SASAKI ,  Yu SASAKI

IPC: C23C16/455 ,  B05B1/20

CPC classification number: C23C16/45591 ,  B05B1/205 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45587 ,  H01J37/3244

Abstract: A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

Abstract translation: 用于供应流体的喷嘴包括管状部件，其包括其内部的管状通道和沿管状通道的长度方向形成有多个流体排出孔的流体排出表面。 分隔板设置在管状通道中并沿着长度方向延伸，以便将管状通道分隔成包括流体排放表面的第一区域和不具有流体排放表面的第二区域。 分隔板具有数量少于多个流体排出孔在长度方向上的数量的分配孔。 流体引入通道与第二区域连通。

公开(公告)号：US20150031204A1

公开(公告)日：2015-01-29

申请号：US14337331

申请日：2014-07-22

Applicant: Tokyo Electron Limited

Inventor： Hiroko SASAKI ,  Yu WAMURA ,  Masato KOAKUTSU

IPC: H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/308 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45551 ,  H01L21/76841 ,  H01L21/76856

Abstract: A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. The one operation is repeated a predetermined plurality of number of times continuously to deposit the nitride film on a plurality of substrates continuously. After that, an inside of the processing chamber is oxidized by supplying an oxidation gas into the processing chamber.

Abstract translation: 提供了一种沉积薄膜的方法。 在该方法中，通过在基板上沉积氮化物膜，并且在将氮化物膜完全沉积在基板上之后将基板搬出处理室，从而将基板搬运到处理室中，进行成膜单元的一次操作 底物。 一次操作连续重复预定的次数，以将氮化物膜连续地沉积在多个基板上。 之后，通过向处理室内供给氧化气体，氧化处理室的内部。