公开(公告)号：US20250019815A1

公开(公告)日：2025-01-16

申请号：US18761495

申请日：2024-07-02

Applicant: Tokyo Electron Limited

Inventor： Shimon OTSUKI ,  Masahiko KAMINISHI ,  Fumiaki HAYASE

IPC: C23C8/12 ,  C23C8/80 ,  H01J37/32 ,  H01L21/02

Abstract: A film-forming method is provided for forming a thin film on a substrate. The film-forming method includes (a) adsorbing a raw material gas onto the substrate, (b) supplying an oxidizing gas to the substrate to oxidize the raw material gas, (c) exposing the substrate to a plasma formed using a plasma gas including an argon gas and an oxygen gas, where (c) includes adjusting an output of the plasma to control crystallinity of the thin film formed on the substrate, and (d) repeating (a), (b), and (c) in this order.

公开(公告)号：US20180237914A1

公开(公告)日：2018-08-23

申请号：US15897209

申请日：2018-02-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Kentaro OSHIMO ,  Hideomi HANE

IPC: C23C16/455 ,  C23C16/513 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/45544 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/511 ,  C23C16/513 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32724 ,  H01J37/32752 ,  H01J37/32899 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/68764 ,  H01L21/68771

Abstract: An apparatus for forming a nitride film of a raw material component on a substrate, includes: a raw material gas supply part having discharge ports that discharge a raw material gas and a purge gas, and an exhaust port; a reaction region spaced apart from the raw material gas supply part in a circumferential direction of a rotary table; a modification region spaced apart from the reaction region in the circumferential direction and in which the nitride film is modified with a hydrogen gas; a first plasma generating part provided in the modification region and a second plasma generating part provided in the reaction region, and for activating a gas existing in each of the modification and reaction regions; a reaction gas supply part for supplying the ammonia gas to the reaction region; and an exhaust port that evacuates an interior of the vacuum vessel.

公开(公告)号：US20210054502A1

公开(公告)日：2021-02-25

申请号：US16993432

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Hideomi HANE ,  Shimon OTSUKI ,  Takeshi OYAMA ,  Ren MUKOUYAMA ,  Jun OGAWA ,  Noriaki FUKIAGE

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/52

Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.

公开(公告)号：US20210054501A1

公开(公告)日：2021-02-25

申请号：US16989103

申请日：2020-08-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Takeshi OYAMA ,  Shimon OTSUKI ,  Ren MUKOUYAMA ,  Noriaki FUKIAGE ,  Jun OGAWA

IPC: C23C16/34 ,  H05H1/24 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: A film forming method of forming a silicon nitride film on a substrate, which includes a first film and a second film having different incubation times when a source gas containing silicon and a first nitriding gas for nitriding the silicon are supplied, includes: supplying a plasmarized hydrogen gas to the substrate; supplying a processing gas formed of silicon halide to the substrate; forming a thin layer of silicon covering the first film and the second film by alternately and repeatedly performing the supplying the plasmarized hydrogen gas and the supplying the processing gas; forming a thin layer of silicon nitride by supplying a second nitriding gas for nitriding the thin layer of silicon to the substrate; and forming the silicon nitride film on the thin layer of the silicon nitride by supplying the source gas and the first nitriding gas to the substrate.

公开(公告)号：US20190127849A1

公开(公告)日：2019-05-02

申请号：US16171667

申请日：2018-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Takeshi OYAMA ,  Hiroaki IKEGAWA ,  Jun OGAWA

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/02

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

公开(公告)号：US20180245216A1

公开(公告)日：2018-08-30

申请号：US15899672

申请日：2018-02-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Takayuki KARAKAWA ,  Takeshi OYAMA ,  Masahide IWASAKI

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/683 ,  C23C16/34

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6835

Abstract: A film forming apparatus for carrying out a film forming process on a substrate by performing a cycle of sequentially supplying a first processing gas and a second processing gas a plurality of times in a vacuum container, includes: a rotary table having one surface on which a substrate mounting region for mounting a substrate is formed; a first gas supply part including a gas discharge portion having gas discharge holes of a first gas with a uniform hole diameter, an exhaust port surrounding the gas discharge portion, and a purge gas discharge port surrounding the gas discharge portion, which are formed on an opposing surface opposite the rotary table; a second gas supply part configured to supply a second gas to a region spaced apart in a circumferential direction of the rotary table from the first gas supply part; and an evacuation port configured to evacuate the vacuum container.

公开(公告)号：US20200294787A1

公开(公告)日：2020-09-17

申请号：US16890216

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34 ,  C23C16/04

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20190292662A1

公开(公告)日：2019-09-26

申请号：US16363488

申请日：2019-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Jun OGAWA ,  Noriaki FUKIAGE ,  Hiroaki IKEGAWA ,  Yasuo KOBAYASHI ,  Takeshi OYAMA

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  C23C16/50

Abstract: A film-forming method includes: mounting a substrate on a mounting table in a vacuu container; adsorbing a raw material to the substrate by supplying raw material gas containing silicon into the vacuum container; nitriding the raw material by supplying nitriding gas to a plasma formation region inside the vacuum container and supplying plasmarized gas to the substrate; forming a silicon-containing nitride film on the substrate by alternately and repeatedly performing the adsorbing a raw material and the nitriding the raw material; setting stress of the silicon-containing nitride film before the adsorbing a raw material and nitriding the raw material; and adjusting a nitriding time having a length based on first correspondence relationship between the stress of the silicon-containing nitride film and parameter corresponding to the nitriding time in the plasma formation region, and the set stress of the silicon-containing nitride film.

公开(公告)号：US20180358235A1

公开(公告)日：2018-12-13

申请号：US16002081

申请日：2018-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Jun OGAWA ,  Noriaki FUKIAGE ,  Hiroaki IKEGAWA ,  Yasuo KOBAYASHI ,  Takeshi OYAMA

IPC: H01L21/3213 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/32139 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/32136

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

公开(公告)号：US20170271143A1

公开(公告)日：2017-09-21

申请号：US15459441

申请日：2017-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.