Plasma processing apparatus and plasma processing method

    公开(公告)号:US12057294B2

    公开(公告)日:2024-08-06

    申请号:US17123130

    申请日:2020-12-16

    摘要: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.

    X-ray nondestructive testing device

    公开(公告)号:US09863897B2

    公开(公告)日:2018-01-09

    申请号:US14844168

    申请日:2015-09-03

    IPC分类号: G01N23/083 G01B15/02

    CPC分类号: G01N23/083 G01B15/02

    摘要: There is provided an X-ray nondestructive testing device which irradiates X-rays to an article, the article including a substrate having a predetermined X-ray absorption coefficient and a measurement target object disposed therein and having another X-ray absorption coefficient differing from that of the substrate, the device including: an X-ray source configured to irradiate the X-rays to the article; a detector configured to detect the transmission amounts of the X-rays passed through the article at at least paired different locations; a detection position specifying designator configured to specify the paired different locations as a set of paired locations based on a pre-stored design information; a driving mechanism configured to move the detector to the set of paired locations; and an operation calculator configured to calculate the thickness of the measurement target object based on the transmission amounts of the X-rays detected by the detector.

    Plasma processing apparatus and processing method

    公开(公告)号:US12125679B2

    公开(公告)日:2024-10-22

    申请号:US17951579

    申请日:2022-09-23

    IPC分类号: H01J37/00 H01J37/32

    摘要: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.