公开(公告)号：US20180200764A1

公开(公告)日：2018-07-19

申请号：US15871265

申请日：2018-01-15

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Noritaka Uchida ,  Takanori Obaru ,  Hidetaka Shinohara ,  Shuuichi Nishikido ,  Tomohito Ura ,  Yuya Motoyama

IPC: B08B17/02 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  B08B1/00 ,  B08B1/02 ,  B08B3/04 ,  B08B5/02 ,  B08B7/04

CPC classification number: B08B17/025 ,  B08B1/002 ,  B08B1/02 ,  B08B3/041 ,  B08B3/08 ,  B08B5/023 ,  B08B7/04 ,  F26B3/04 ,  F26B5/08 ,  F26B21/14 ,  H01L21/02043 ,  H01L21/02052 ,  H01L21/02096 ,  H01L21/67017 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/67173 ,  H01L21/67253 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68785 ,  H01L21/68792

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a processing liquid supply device 71.

公开(公告)号：US12276455B2

公开(公告)日：2025-04-15

申请号：US17464367

申请日：2021-09-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masataka Gosho ,  Shu Yamamoto ,  Tomohito Ura ,  Satoshi Okamura

IPC: F26B5/00 ,  F26B21/06 ,  G01M3/04

Abstract: A substrate processing apparatus for drying a substrate by substituting a liquid film of a drying liquid formed on the substrate with a supercritical fluid incudes: a pressure container configured to accommodate the substrate on which the liquid film is formed; a discharge line configured to discharge a fluid inside the pressure container; a depressurizing valve provided in a middle of the discharge line; and a concentration measurement part configured to measure a concentration of vapor of the drying liquid in the fluid flowing through the discharge line, wherein the concentration measurement part is provided on a downstream side of the depressurizing valve of the discharge line and measures the concentration of the drying liquid in the fluid depressurized by the depressurizing valve.

公开(公告)号：US20170278727A1

公开(公告)日：2017-09-28

申请号：US15454108

申请日：2017-03-09

Applicant: Tokyo Electron Limited

Inventor： Nobuhiko Mouri ,  Shingo Kamitomo ,  Masakazu Yarimitsu ,  Takeru Hirose ,  Tomohito Ura

IPC: H01L21/67 ,  B08B3/04 ,  B08B1/00 ,  H01L21/687

CPC classification number: H01L21/67046 ,  B08B1/002 ,  B08B17/00 ,  H01L21/67051 ,  H01L21/68735

Abstract: A liquid residue on a bottom surface of a substrate can be reduced while placing the substrate accurately. A liquid processing apparatus includes an inclined portion, a plurality of supporting members, a processing liquid supply unit and a rotation unit. The inclined portion is provided under the substrate, and has an inclined surface which is inclined downwards from an outer side of the substrate toward an inner side thereof and is extended along a circumferential direction of the substrate. The supporting members are protruded from the inclined surface and configured to support the substrate from below. The processing liquid supply unit is configured to supply a processing liquid onto a top surface of the substrate. The rotation unit is configured to rotate the inclined portion. Further, each of the supporting members has a long narrow shape extended from the outer side of the substrate toward the inner side thereof.

公开(公告)号：US20250167011A1

公开(公告)日：2025-05-22

申请号：US19032823

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Masataka Gosho ,  Satoshi Okamura ,  Tomohito Ura

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

公开(公告)号：US12237177B2

公开(公告)日：2025-02-25

申请号：US17649933

申请日：2022-02-04

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Masataka Gosho ,  Satoshi Okamura ,  Tomohito Ura

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

公开(公告)号：US20220254658A1

公开(公告)日：2022-08-11

申请号：US17649933

申请日：2022-02-04

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Masataka Gosho ,  Satoshi Okamura ,  Tomohito Ura

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

公开(公告)号：US11084072B2

公开(公告)日：2021-08-10

申请号：US15871265

申请日：2018-01-15

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Noritaka Uchida ,  Takanori Obaru ,  Hidetaka Shinohara ,  Shuuichi Nishikido ,  Tomohito Ura ,  Yuya Motoyama

IPC: B08B17/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B1/00 ,  B08B1/02 ,  B08B3/04 ,  B08B5/02 ,  B08B7/04 ,  F26B21/14 ,  F26B3/04 ,  F26B5/08 ,  B08B3/08

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a first processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a second processing liquid supply device 71.

公开(公告)号：US10665478B2

公开(公告)日：2020-05-26

申请号：US15454108

申请日：2017-03-09

Applicant: Tokyo Electron Limited

Inventor： Nobuhiko Mouri ,  Shingo Kamitomo ,  Masakazu Yarimitsu ,  Takeru Hirose ,  Tomohito Ura

IPC: H01L21/304 ,  H01L21/67 ,  B08B1/00 ,  B08B17/00 ,  H01L21/687

Abstract: A liquid residue on a bottom surface of a substrate can be reduced while placing the substrate accurately. A liquid processing apparatus includes an inclined portion, a plurality of supporting members, a processing liquid supply unit and a rotation unit. The inclined portion is provided under the substrate, and has an inclined surface which is inclined downwards from an outer side of the substrate toward an inner side thereof and is extended along a circumferential direction of the substrate. The supporting members are protruded from the inclined surface and configured to support the substrate from below. The processing liquid supply unit is configured to supply a processing liquid onto a top surface of the substrate. The rotation unit is configured to rotate the inclined portion. Further, each of the supporting members has a long narrow shape extended from the outer side of the substrate toward the inner side thereof.