公开(公告)号：US20220139942A1

公开(公告)日：2022-05-05

申请号：US17578468

申请日：2022-01-19

Applicant: Tokyo Electron Limited

Inventor： Genji NAKAMURA ,  Keisuke SUZUKI ,  Kimiya AOKI

IPC: H01L27/11551 ,  H01L27/11578 ,  H01L21/28

Abstract: A semiconductor device includes an electric-charge storing film, an electrode, a first block film, and a second block film. The first block film is arranged between the electric-charge storing film and the electrode.
The second block film is arranged between the first block film and the electric-charge storing film. The first block film is an oxide film containing tantalum, and an electric permittivity of the first block film is larger than an electric permittivity of the second block film.

公开(公告)号：US20230102051A1

公开(公告)日：2023-03-30

申请号：US17935594

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Makoto WADA ,  Nobutake KABUKI ,  Takashi MATSUMOTO ,  Hiroshi TERADA ,  Genji NAKAMURA

IPC: C23C16/26 ,  C23C16/02 ,  C23C16/44 ,  C23C16/513

Abstract: A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

公开(公告)号：US20210399085A1

公开(公告)日：2021-12-23

申请号：US17279830

申请日：2019-09-19

Applicant: Tokyo Electron Limited

Inventor： Yumiko KAWANO ,  Genji NAKAMURA ,  Philippe GAUBERT ,  Hajime NAKABAYASHI

IPC: H01L49/02

Abstract: A method of manufacturing a semiconductor device includes a first laminating step, a second laminating step, a third laminating step, a first annealing step, and a fourth laminating step. In the first laminating step, a first electrode film is laminated on a substrate. In the second laminating step, a capacitive insulator is laminated on the first electrode film. In the third laminating step, a metal oxide is laminated on the capacitive insulator. In the first annealing step, the first electrode film, the capacitive insulator, and the metal oxide, which are laminated on the substrate, are annealed. In the fourth laminating step, a second electrode film is laminated on the annealed metal oxide. The capacitive insulator is an oxide that contains at least one of zirconium and hafnium, and the metal oxide is an oxide that contains at least one of tungsten, molybdenum, and vanadium.

公开(公告)号：US20170170010A1

公开(公告)日：2017-06-15

申请号：US15380955

申请日：2016-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junya MIYAHARA ,  Yutaka FUJINO ,  Genji NAKAMURA ,  Kentaro SHIRAGA

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/511 ,  C23C16/40 ,  H01L21/687 ,  C23C16/455

CPC classification number: H01L21/02236 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32247 ,  H01J37/32256 ,  H01J37/32311 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02304 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/687

Abstract: A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20° C. to 145° C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m2 to 3.5 kW/m2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

公开(公告)号：US20160351398A1

公开(公告)日：2016-12-01

申请号：US15165085

申请日：2016-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Hidenori MIYOSHI ,  Masahiro OKA ,  Genji NAKAMURA ,  Yuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01L21/324 ,  H01J37/32 ,  H01L21/265

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/32724 ,  H01L21/324 ,  H01L29/16

Abstract: Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves. By using the generated high frequency plasma, a plasma doping treatment is performed on a germanium-containing to-be-processed substrate which is held on a holding table within the processing container.

Abstract translation: 公开了一种通过将掺杂剂注入到待处理的基板上来制造半导体元件的方法。 通过使用微波在处理容器内产生高频等离子体。 通过使用所生成的高频等离子体，对保持在处理容器内的保持台上的含锗被处理基板进行等离子体掺杂处理。

公开(公告)号：US20220384473A1

公开(公告)日：2022-12-01

申请号：US17331813

申请日：2021-05-27

Applicant: Tokyo Electron Limited

Inventor： Sara OTSUKI ,  Genji NAKAMURA ,  Muneyuki OTANI ,  Kazuya TAKAHASHI

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device according to the present disclosure includes forming a stack by alternately stacking insulating films and sacrificial films on a substrate; forming, in the stack, a through-hole extending in a thickness direction of the stack; forming a block insulating film, a charge trapping film, a tunnel insulating film, and a channel film on an inner surface of the through-hole in this order; forming, in the stack, a slit extending in the thickness direction of the stack separately from the through-hole; removing the sacrificial films through the slit so as to form a recess between adjacent insulating films; forming a first metal oxide film on an inner surface of the recess; forming, on the first metal oxide film, a second metal oxide film having a crystallization temperature lower than that of the first metal oxide film; and filling the recess with an electrode layer.

公开(公告)号：US20180047787A1

公开(公告)日：2018-02-15

申请号：US15670368

申请日：2017-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Genji NAKAMURA ,  Tamotsu MORIMOTO

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2427 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1683

Abstract: A nonvolatile storage device includes: first wirings arranged in first and second directions that intersect each other, and extending in a third direction perpendicular to the first and second directions; second wirings extending in the first direction, and each of the second wiring installed at a predetermined interval from each other in the third direction; first layers disposed between the first wirings and the second wirings, and extending in the third direction along the plurality of first wirings; and memory cells installed between the first layers and the second wirings and at respective positions where the first layers and the second wirings intersect each other. Each memory cell includes a second layer disposed towards a side closer to the second wirings and a conductive intermediate layer disposed towards a side closer to the first layers.