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公开(公告)号：US11742228B2
公开(公告)日：2023-08-29
申请号：US17189691
申请日：2021-03-02
Applicant: Tokyo Electron Limited
Inventor： Risako Matsuda , Shinobu Kinoshita , Manabu Oie , Keita Shouji
IPC: H01L21/67 , H01L21/02 , H01L21/3065 , H01L21/66
CPC classification number: H01L21/67253 , H01L21/0262 , H01L21/3065 , H01L22/10
Abstract: A substrate processing method of processing a substrate using a gas supplied to a chamber includes: (a) setting a threshold value of a pressure of the gas, which is a control target in a flow rate controller configured to measure the pressure of the gas supplied to the chamber and control a flow rate of the gas; (b) supplying the gas into the chamber; (c) measuring the pressure of the gas by the flow rate controller; (d) stopping the supply of the gas into of the chamber; (e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and (f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).
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2.发明授权公开(公告)号：US11585717B2
公开(公告)日：2023-02-21
申请号：US16806628
申请日：2020-03-02
Applicant: Tokyo Electron Limited
Inventor： Risako Matsuda , Norihiko Amikura , Kazuyuki Miura , Keita Shouji
Abstract: In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.
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公开(公告)号：US11899476B2
公开(公告)日：2024-02-13
申请号：US17176288
申请日：2021-02-16
Applicant: TOKYO ELECTRON LIMITED
Inventor： Risako Matsuda , Shinichiro Hayasaka , Manabu Oie , Keita Shouji
CPC classification number: G05D7/0647 , G01F1/34 , G01F1/50 , G01F1/86 , G01F7/005 , G01F15/005 , G01F15/02 , G05D7/0664
Abstract: A gas flow measuring method is provided. A first pressure of a gas in a first and a second flow path is measured. A gas is supplied to the first and the second flow paths by repeating gas supply and stop of the gas supply, and a gas supply time is measured. A second pressure and a temperature of the gas in the first and the second flow path is measured, a third pressure of the gas in the second flow path is measured after the gas is exhausted from the second flow path, and a fourth pressure of the gas in the first and the second flow path is measured. The gas flow supplied to the first and the second flow path is calculated based on the first to fourth pressures and the temperature, and corrected based on a theoretical gas supply time and a calculated average time.
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Patent Agency Ranking
公开(公告)号：US11292035B2
公开(公告)日：2022-04-05
申请号：US16393462
申请日：2019-04-24
Applicant: TOKYO ELECTRON LIMITED
Inventor： Risako Matsuda
IPC: B08B9/02 , B08B7/00 , H01J37/32 , H01L21/311 , H01L21/027 , B08B9/027
Abstract: A method includes forming a film of a compound on an inner wall of a gas supply line by polymerization of a first compound and a second compound by controlling a temperature of the gas supply line to a first temperature at which the first compound and the second compound are polymerized in a state where a first gas containing the first compound and a second gas containing the second compound are supplied to the gas supply line, and removing the film by controlling the temperature of the gas supply line to a second temperature at which the film is depolymerized after predetermined processing is performed on a target object in a processing chamber by a processing gas supplied into the processing chamber through the gas supply line having the film. The first compound is isocyanate. The second compound is amine or a compound having a hydroxyl group.
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公开(公告)号：US11555755B2
公开(公告)日：2023-01-17
申请号：US17196272
申请日：2021-03-09
Applicant: Tokyo Electron Limited
Inventor： Risako Matsuda , Keita Shouji
Abstract: There is provided a method of calibrating multiple chamber pressure sensors of a substrate processing system. The substrate processing system includes: multiple chambers; multiple chamber pressure sensors; multiple gas suppliers configured to supply a gas to an internal space of the multiple chambers; multiple exhausters connected to the internal spaces of the multiple chambers via multiple exhaust flow paths; and multiple first gas flow paths. The method includes: acquiring a third volume, which is a sum of a first volume and a second volume; acquiring a first pressure change rate of the internal space of a selected chamber; calculating a second pressure change rate of the internal space of the selected chamber; and calibrating the selected chamber pressure sensor such that a difference between the first pressure change rate and the second pressure change rate is within a preset range.
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公开(公告)号：US11326914B2
公开(公告)日：2022-05-10
申请号：US16645898
申请日：2019-05-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Norihiko Amikura , Risako Matsuda , Kazuyuki Miura
IPC: G01F1/50
Abstract: The flow rate measurement method includes: measuring a first pressure of a gas filled in a first flow path connected to a flow rate controller and a second flow path connected to the first flow path; supplying a gas to the first and second flow paths via the flow rate controller and measuring a second pressure and a temperature of the gas filled in the first and second flow paths; after the gas is exhausted from the second flow path, measuring a third pressure of the gas filled in the second flow path; measuring a fourth pressure of the gas filled in the first and second flow paths; and calculating an amount of the gas supplied to the first and second flow paths via the flow rate controller, based on the first, second, third, and fourth pressures and the temperature.
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公开(公告)号：US11644121B2
公开(公告)日：2023-05-09
申请号：US17189804
申请日：2021-03-02
Applicant: Tokyo Electron Limited
Inventor： Risako Matsuda , Norihiko Amikura
CPC classification number: F16K37/0091 , G01F1/34
Abstract: A gas inspection method includes: inputting a signal for opening a secondary valve; measuring, by a secondary pressure gauge, a pressure P on a downstream side of an orifice of a flow rate controller at a time point when a period t elapses from the input of the signal for opening the secondary valve; measuring, by the secondary pressure gauge, a standard deviation σ of the pressure P on the downstream side of the orifice of the flow rate controller at the time point when the period t elapses from the input of the signal for opening the secondary valve; and determining whether or not an open degree of the secondary valve is normal by comparing the pressure P and the standard deviation σ of the pressure P with a threshold value P0 of the pressure and a threshold value σ0 of the standard deviation of the pressure.
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公开(公告)号：US20210263540A1
公开(公告)日：2021-08-26
申请号：US17176288
申请日：2021-02-16
Applicant: TOKYO ELECTRON LIMITED
Inventor： Risako Matsuda , Shinichiro Hayasaka , Manabu Oie , Keita Shouji
IPC: G05D7/06
Abstract: A gas flow measuring method is provided. A first pressure of a gas in a first and a second flow path is measured. A gas is supplied to the first and the second flow paths by repeating gas supply and stop of the gas supply, and a gas supply time is measured. A second pressure and a temperature of the gas in the first and the second flow path is measured, a third pressure of the gas in the second flow path is measured after the gas is exhausted from the second flow path, and a fourth pressure of the gas in the first and the second flow path is measured. The gas flow supplied to the first and the second flow path is calculated based on the first to fourth pressures and the temperature, and corrected based on a theoretical gas supply time and a calculated average time.
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