公开(公告)号：US20250092514A1

公开(公告)日：2025-03-20

申请号：US18970324

申请日：2024-12-05

Applicant: Tokyo Electron Limited

Inventor： Masanobu IGETA ,  Yutaka TAKAHASHI ,  Tatsuya TAMURA ,  Yusuke SUZUKI ,  Toyohiro KAMADA ,  Kenichi OYAMA ,  Reiko TSUZUKI ,  Seiji NAGAHARA ,  Makoto MURAMATSU ,  Satoru MURAMATSU ,  Satoru SHIMURA

IPC: C23C16/40 ,  C23C16/56 ,  G03F7/20 ,  G03F7/40

Abstract: A substrate processing method includes forming a metal oxide resist film on a substrate including an underlayer; forming a pattern in the metal oxide resist film; modifying the metal oxide resist film in which the pattern has been formed; and etching the underlayer by using the modified metal oxide resist film as a mask.