公开(公告)号：US20170221703A1

公开(公告)日：2017-08-03

申请号：US15420579

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/687 ,  C23C8/34

CPC classification number: H01L21/02277 ,  C23C8/34 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45551 ,  C23C28/04 ,  C23C28/046 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/332 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764

Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

公开(公告)号：US20170133204A1

公开(公告)日：2017-05-11

申请号：US15345106

申请日：2016-11-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Toyohiro KAMADA ,  Hiroyuki IKUTA ,  Yuya MINOURA

IPC: H01J37/32 ,  C23C16/50

Abstract: There is provided a member for a plasma processing apparatus, the member constituting the plasma processing apparatus configured to generate plasma in a processing space of a processing container and to perform plasma processing on an object to be processed. The member includes a face of the member exposed to the plasma and coated with a protection film. The protection film includes a columnar structure having a plurality of column-shaped portions in substantially cylindrical shapes extending in a thickness direction of the film. The plurality of column-shaped portions is adjacent to one another without gaps therebetween.

公开(公告)号：US20160322218A1

公开(公告)日：2016-11-03

申请号：US15140551

申请日：2016-04-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Masahide IWASAKI ,  Toyohiro KAMADA ,  Ryosuke EBIHARA ,  Masanobu IGETA

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/36 ,  H01J37/32 ,  C23C16/455

CPC classification number: H01L21/02274 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/45565 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32733 ,  H01J37/32899 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0228

Abstract: A film forming method for forming a nitride film on a workpiece substrate accommodated within a process vessel, including: performing a first reaction of supplying a first precursor gas to the workpiece substrate accommodated within the process vessel; performing a second reaction of supplying a second precursor gas to the workpiece substrate accommodated within the process vessel; performing a modification of generating plasma of a modifying gas just above the workpiece substrate by supplying the modifying gas into the process vessel and supplying microwaves from an antenna into the process vessel, and plasma-processing, by the plasma thus generated, a surface of the workpiece substrate subjected to the first and second reactions using the first and second precursor gases.

Abstract translation: 一种用于在容纳在处理容器内的工件衬底上形成氮化物膜的成膜方法，包括：对容纳在处理容器内的工件衬底进行第一前体气体的供给; 进行向容纳在处理容器内的工件基板供给第二前体气体的第二反应; 通过将改性气体供给到处理容器中并将微波从天线供给到处理容器中，并通过等离子体等离子体处理等离子体，从而对工件基板上方的修正气体等离子体进行等离子体处理， 使用第一和第二前体气体进行第一和第二反应的工件基板。

公开(公告)号：US20200294798A1

公开(公告)日：2020-09-17

申请号：US16815672

申请日：2020-03-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Toyohiro KAMADA ,  Shinichi IKE ,  Shuji AZUMO

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/50 ,  C23C16/52

Abstract: There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.

公开(公告)号：US20180135170A1

公开(公告)日：2018-05-17

申请号：US15809442

申请日：2017-11-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033

CPC classification number: C23C16/345 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/0332 ,  H01L21/0337

Abstract: An apparatus includes a raw material gas supply part including a discharge part for discharging a raw material gas and an exhaust port formed to surround the discharge part, reaction and modification regions formed apart from the raw material gas supply part, a reaction gas discharge part for discharging a reaction gas toward one of upstream and downstream sides, a modification gas discharge part for discharging a modification gas toward one of upstream and downstream sides, a reaction gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the reaction region, a modification gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the modification region, and plasma generation parts for reaction gas and modification gas which activate gases respectively supplied to the reaction and modification regions.

公开(公告)号：US20250092514A1

公开(公告)日：2025-03-20

申请号：US18970324

申请日：2024-12-05

Applicant: Tokyo Electron Limited

Inventor： Masanobu IGETA ,  Yutaka TAKAHASHI ,  Tatsuya TAMURA ,  Yusuke SUZUKI ,  Toyohiro KAMADA ,  Kenichi OYAMA ,  Reiko TSUZUKI ,  Seiji NAGAHARA ,  Makoto MURAMATSU ,  Satoru MURAMATSU ,  Satoru SHIMURA

IPC: C23C16/40 ,  C23C16/56 ,  G03F7/20 ,  G03F7/40

Abstract: A substrate processing method includes forming a metal oxide resist film on a substrate including an underlayer; forming a pattern in the metal oxide resist film; modifying the metal oxide resist film in which the pattern has been formed; and etching the underlayer by using the modified metal oxide resist film as a mask.

公开(公告)号：US20200294787A1

公开(公告)日：2020-09-17

申请号：US16890216

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34 ,  C23C16/04

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20170271143A1

公开(公告)日：2017-09-21

申请号：US15459441

申请日：2017-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.