公开(公告)号：US20150079808A1

公开(公告)日：2015-03-19

申请号：US14480756

申请日：2014-09-09

Applicant: Tokyo Electron Limited

Inventor： Tatsuya TAMURA ,  Takeshi KUMAGAI ,  Takashi CHIBA

IPC: H01L21/02

CPC classification number: H01L21/02271 ,  C23C16/402 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228

Abstract: A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. Then, supply of an oxidation gas into the reaction chamber is started by an oxidation gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber, and supply of a silicon-containing gas into the reaction chamber is started by a silicon-containing gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber.

Abstract translation: 提供一种制造氧化硅膜的方法。 在该方法中，将表面具有金属膜的基板装载到反应室中，在将反应室内的载体加载到反应室内之后，通过氢气供给部开始向反应室内供给氢气 。 然后，在开始向反应室供给氢气的步骤之后，通过氧化气体供给部开始向反应室内供给氧化气体，通过在反应室内供给含硅气体开始， 在开始向反应室供应氢气的步骤之后的含硅气体供给单元。

公开(公告)号：US20180155829A1

公开(公告)日：2018-06-07

申请号：US15825611

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Tatsuya TAMURA ,  Takahito UMEHARA

IPC: C23C16/44 ,  C23C16/458 ,  C23C14/50 ,  C23C22/34

CPC classification number: C23C16/4405 ,  C23C14/505 ,  C23C16/401 ,  C23C16/45548 ,  C23C16/458 ,  C23C16/4584 ,  C23C22/34

Abstract: A method performed by a film deposition apparatus including a process chamber and a rotary table that is disposed in the process chamber and includes a substrate-mounting surface on which a substrate is placeable. The method includes a first cleaning process of supplying a cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a first cleaning position, and a second cleaning process of supplying the cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a second cleaning position that is lower than the first cleaning position.

公开(公告)号：US20150079807A1

公开(公告)日：2015-03-19

申请号：US14480748

申请日：2014-09-09

Applicant: Tokyo Electron Limited

Inventor： Tatsuya TAMURA ,  Takeshi KUMAGAI

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4584 ,  H01L21/02219 ,  H01L21/02271

Abstract: A method of manufacturing a silicon oxide film by using a film deposition apparatus is provided. The apparatus includes a turntable including a substrate receiving part on its upper surface, a first gas supply part to supply a first gas to the turntable in a first process area, and a second gas supply part arranged in a second process area apart from the first process area to supply a second gas. In the method, a silicon-containing gas is supplied from the first gas supply part as the first gas. A hydrogen gas and an oxidation gas are supplied from the second gas supply part as the second gas. The first gas is caused to adsorb on the substrate in the first process area, and the second gas is caused to react with the first gas adsorbed on the substrate in the second process area while rotating the turntable.

Abstract translation: 提供了使用成膜装置制造氧化硅膜的方法。 该装置包括在其上表面上包括基板接收部分的转台，在第一处理区域中向第一处理区域提供第一气体的第一气体供应部分和布置在第二处理区域中的第二气体供应部分， 处理区域供应第二气体。 在该方法中，从第一气体供给部供给含硅气体作为第一气体。 作为第二气体，从第二气体供给部供给氢气和氧化气体。 使第一气体吸附在第一处理区域中的基板上，并且使第二气体与第二处理区域中吸附在基板上的第一气体反转，同时旋转转台。

公开(公告)号：US20250092514A1

公开(公告)日：2025-03-20

申请号：US18970324

申请日：2024-12-05

Applicant: Tokyo Electron Limited

Inventor： Masanobu IGETA ,  Yutaka TAKAHASHI ,  Tatsuya TAMURA ,  Yusuke SUZUKI ,  Toyohiro KAMADA ,  Kenichi OYAMA ,  Reiko TSUZUKI ,  Seiji NAGAHARA ,  Makoto MURAMATSU ,  Satoru MURAMATSU ,  Satoru SHIMURA

IPC: C23C16/40 ,  C23C16/56 ,  G03F7/20 ,  G03F7/40

Abstract: A substrate processing method includes forming a metal oxide resist film on a substrate including an underlayer; forming a pattern in the metal oxide resist film; modifying the metal oxide resist film in which the pattern has been formed; and etching the underlayer by using the modified metal oxide resist film as a mask.

公开(公告)号：US20140349032A1

公开(公告)日：2014-11-27

申请号：US14458319

申请日：2014-08-13

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Tatsuya TAMURA ,  Takeshi KUMAGAI

IPC: C23C16/455

CPC classification number: C23C16/45536 ,  C23C14/00 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45529 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/30 ,  H01L21/76224

Abstract: A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.

Abstract translation: 一种成膜方法，其中在具有凹面的基板上形成有容易吸附在羟基上的第一反应气体的反应产物的膜和能够与第一反应气体反应的第二反应气体的膜 包括在基板的凹部中控制深度方向的羟基的吸附分布的工序; 将第一反应气体供给到其上吸附羟基的基材上的步骤; 以及在吸附有第一反应气体的基板上供给第二反应气体的工序。