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公开(公告)号：US20170182514A1
公开(公告)日：2017-06-29
申请号：US15382901
申请日：2016-12-19
IPC分类号： B05D1/00
CPC分类号： C23C16/04 , C23C16/18 , C23C16/405 , C23C16/4554 , C23C16/45551 , C23C16/4584 , H01J37/321 , H01J37/32366 , H01J37/32431 , H01J37/3244 , H01J37/32651 , H01J37/32715 , H01J37/32779 , H01L21/02186 , H01L21/0228 , H01L21/0334
摘要： A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.
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公开(公告)号：US20190172700A1
公开(公告)日：2019-06-06
申请号：US16198087
申请日：2018-11-21
发明人： Kazumi KUBO , Yutaka TAKAHASHI , Hitoshi KATO
IPC分类号： H01L21/02
摘要： A film deposition method for depositing a silicon nitride film of selectively depositing on a flat surface of a substrate between minute recesses including a chlorine radical adsorbing step of supplying a chlorine containing gas that is activated onto a front surface of the substrate to cause the chlorine radical to be adsorbed entirely on the front surface of the substrate, a nitriding step of supplying a nitriding gas that is activated onto the substrate on which the chlorine radical adsorbs, causing the chlorine radical adsorbing on the flat surface, and nitride the flat surface from among the front surface of the substrate so as to form a silicon adsorption site, and a raw gas adsorbing step of supplying a raw gas that contains silicon and chlorine onto the substrate so as to cause the raw gas to adsorb onto the silicon adsorption site.
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公开(公告)号：US20190051513A1
公开(公告)日：2019-02-14
申请号：US16057197
申请日：2018-08-07
发明人： Hitoshi KATO , Yutaka TAKAHASHI , Kazumi KUBO
IPC分类号： H01L21/02 , H01L21/768 , H01L21/687 , H01J37/32 , C23C16/34 , C23C16/455 , C23C16/52
摘要： A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate. In the method, a first adsorption blocking region is formed by adsorbing first chlorine radicals such that an amount of adsorption increases upward from a bottom portion of the recessed pattern. A source gas that contains silicon and chlorine adsorbs on an adsorption site where the first adsorption site is not formed. A molecular layer of a silicon nitride film is deposited so as to have a V-shaped cross section. A second adsorption blocking region is formed by adsorbing second chlorine radicals on the molecular layer of the silicon nitride film. The molecular layer of the silicon nitride film is modified by nitriding the molecular layer while removing the second adsorption blocking region.
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公开(公告)号：US20190051511A1
公开(公告)日：2019-02-14
申请号：US16057081
申请日：2018-08-07
发明人： Hitoshi KATO , Yutaka TAKAHASHI , Kazumi KUBO
IPC分类号： H01L21/02 , C23C16/34 , C23C16/50 , C23C16/455 , C23C16/458 , H01J37/32 , H01L21/768 , H01L21/687
摘要： A method for depositing a silicon nitride film is provided. In the method, an adsorption blocking region is formed such that a chlorine-containing gas conformally adsorbs on a surface of a substrate by adsorbing chlorine radicals on the surface of the substrate. A source gas that contains silicon and chlorine is adsorbed on the adsorption blocking region adsorbed on the surface of the substrate. A silicon nitride film is deposited on the surface of the substrate by supplying a nitriding gas activated by plasma to the source gas adsorbed on the surface of the substrate.
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公开(公告)号：US20180204716A1
公开(公告)日：2018-07-19
申请号：US15869623
申请日：2018-01-12
发明人： Yutaka TAKAHASHI , Masahiro MURATA
IPC分类号： H01L21/02 , C23C16/24 , C23C16/455 , H01L21/687
摘要： A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses. A surface of the silicon-containing underfilm formed on the flat surface of the substrate is nitrided by supplying a nitriding gas converted to plasma to the silicon-containing underfilm terminated with fluorine such that a silicon adsorption site is formed on the surface of the silicon-containing underfilm formed on the flat surface of the substrate. A silicon-containing gas is adsorbed on the silicon adsorption site by supplying the silicon-containing gas to the silicon-containing underfilm.
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公开(公告)号：US20180019114A1
公开(公告)日：2018-01-18
申请号：US15637208
申请日：2017-06-29
发明人： Hitoshi KATO , Yutaka TAKAHASHI , Masahiro MURATA
CPC分类号： H01L21/0217 , C23C16/045 , C23C16/345 , C23C16/45534 , C23C16/45542 , C23C16/45551 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/28202
摘要： A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in a predetermined upper area of the recess by adsorbing a chlorine-containing gas on the nitride adsorption site in the predetermined upper area by physical adsorption. The predetermined upper area ranges from an upper end of the recess to a predetermined depth of the recess. A silicon-containing gas is adsorbed on the nitride adsorption site other than the predetermined upper area so as to deposit a silicon nitride film by a chemical reaction between the adsorbed ammonia-containing gas and the adsorbed silicon-containing gas. The nitride adsorption site includes a bottom surface of the recess.
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公开(公告)号：US20190051512A1
公开(公告)日：2019-02-14
申请号：US16057125
申请日：2018-08-07
发明人： Hitoshi KATO , Yutaka TAKAHASHI , Kazumi KUBO
IPC分类号： H01L21/02 , C23C16/455 , C23C16/34 , C23C16/458 , H01L21/687 , H01J37/32 , H01L21/768
摘要： A method for depositing a silicon nitride film is provided to fill a recessed pattern formed in a surface of a substrate with a silicon nitride film. In the method, a first silicon nitride film is deposited in the recessed pattern formed in the surface of the substrate. The first silicon nitride film has a V-shaped cross section decreasing its film thickness upward from a bottom portion of the recessed pattern. A second silicon nitride film conformal to a surface shape of the first silicon nitride film is deposited.
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公开(公告)号：US20200251326A1
公开(公告)日：2020-08-06
申请号：US16751440
申请日：2020-01-24
发明人： Kazumi KUBO , Yutaka TAKAHASHI , Takayuki KARAKAWA
IPC分类号： H01L21/02
摘要： A deposition method includes forming a nitride film on a surface of a substrate; and performing, after the depositing, plasma purging supplying a noble gas activated as a plasma. The forming of the nitride film includes a) forming adsorption inhibitors on the surface of the substrate, by supplying a chlorine gas activated by a plasma and by causing the activated chlorine gas to be adsorbed on the surface of the substrate; b) causing a raw material gas, containing silicon and chlorine or a metal and chlorine, to be adsorbed on a region in the surface of the substrate on which the adsorption inhibitors are not present, by supplying the raw material gas on the surface of the substrate; and c) depositing the nitride film on the surface of the substrate, by supplying a nitriding gas to cause the raw material gas to be reacted with the nitriding gas.
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公开(公告)号：US20200243330A1
公开(公告)日：2020-07-30
申请号：US16750205
申请日：2020-01-23
发明人： Kazumi KUBO , Takayuki KARAKAWA , Yutaka TAKAHASHI
IPC分类号： H01L21/02 , H01L21/687 , C23C16/44 , C23C16/50 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/46
摘要： A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.
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公开(公告)号：US20200017968A1
公开(公告)日：2020-01-16
申请号：US16506143
申请日：2019-07-09
发明人： Hitoshi KATO , Kazumi KUBO , Yutaka TAKAHASHI
IPC分类号： C23C16/455 , H01L21/02 , C23C16/34 , H01J37/32
摘要： A deposition method includes: forming an adsorption inhibiting region on an adsorption site formed on a substrate, by causing the adsorption site to adsorb adsorption inhibiting radicals by a predetermined amount; causing an area on the adsorption site, on which the adsorption inhibiting region is not formed, to adsorb a raw material gas; and depositing a film of a reaction product on the adsorption site by causing the raw material gas adsorbed on the adsorption site to react with a reactant gas activated by a plasma.
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