公开(公告)号：US11024514B2

公开(公告)日：2021-06-01

申请号：US16523541

申请日：2019-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takuya Abe ,  Hidenori Miyoshi ,  Akitaka Shimizu ,  Koichi Nagakura

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/67 ,  H01L27/11582

Abstract: There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.

公开(公告)号：US20140117551A1

公开(公告)日：2014-05-01

申请号：US14149955

申请日：2014-01-08

Applicant: Tokyo Electron Limited

Inventor： Hidenori Miyoshi

IPC: H01L21/768 ,  H01L23/532 ,  C23C16/52

CPC classification number: H01L21/76843 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/18 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: A processing system for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess is provided. The processing system comprises: a processing apparatus configured to form a first-metal-containing film containing a first metal on a surface of the target object; a processing apparatus configured to form a second-metal-containing film containing Mn as a second metal having a barrier property against a filling metal to be filled in the recess; a processing apparatus configured to form a thin film made of a third metal as the filling metal to be filled; a common transfer chamber connected with each of the processing apparatuses; a transfer unit for transferring the target object into each of the processing apparatuses; and a system controller that controls the whole processing system so as to perform a film forming method.

Abstract translation: 提供了一种用于在其上具有由低k膜制成并具有凹陷的绝缘层的目标物体上形成膜的处理系统。 处理系统包括：处理装置，被配置为在目标物体的表面上形成含有第一金属的第一含金属膜; 一种处理装置，被配置为形成含有第二金属的第二金属含有膜，所述第二金属具有抵抗要填充在所述凹部中的填充金属的阻挡性; 一种处理装置，被配置为形成由作为要填充的填充金属的第三金属制成的薄膜; 与每个处理装置连接的公共传送室; 传送单元，用于将目标对象传送到每个处理设备中; 以及控制整个处理系统以执行成膜方法的系统控制器。

公开(公告)号：US20130306597A1

公开(公告)日：2013-11-21

申请号：US13950658

申请日：2013-07-25

Applicant: Tokyo Electron Limited

Inventor： Isao Gunji ,  Hidenori Miyoshi ,  Kenichi Hara

IPC: C23F1/02 ,  C23F1/08

CPC classification number: C23F1/02 ,  C23F1/08 ,  C23F4/00 ,  H01J27/026 ,  H01J37/08 ,  H01J37/3056 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3174 ,  H01L21/32136

Abstract: A method for processing a metal film includes adiabatically expanding a mixed gas including an oxidation gas, a complexing gas and a rare gas in a processing chamber having a vacuum exhaust device such that a gas cluster beam is generated in the processing chamber, and irradiating the gas cluster beam upon a metal film formed on a surface of a workpiece in the processing chamber such that the gas cluster beam collides on the metal film including a metal element and the metal film is etched. The mixed gas includes the oxidation gas which oxidizes the metal element and forms an oxide, and the complexing gas which reacts with the oxide and forms an organometallic complex

Abstract translation: 一种处理金属膜的方法包括在具有真空排气装置的处理室中绝热膨胀包括氧化气体，络合气体和稀有气体的混合气体，使得在处理室中产生气体束束并照射 气体簇束在形成在处理室中的工件表面上的金属膜上，使得气体簇束与包括金属元素的金属膜碰撞并且金属膜被蚀刻。 混合气体包括氧化金属元素并形成氧化物的氧化气体和与氧化物反应形成有机金属络合物的络合气体

公开(公告)号：US12266562B2

公开(公告)日：2025-04-01

申请号：US17450209

申请日：2021-10-07

Applicant: Tokyo Electron Limited

Inventor： Hajime Naito ,  Hidenori Miyoshi ,  Shigeki Doba

IPC: H01J37/32 ,  H01L21/677 ,  H01L21/687

Abstract: There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.

公开(公告)号：US10825688B2

公开(公告)日：2020-11-03

申请号：US16308428

申请日：2017-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru Tahara ,  Daisuke Urayama ,  Kenji Matsumoto ,  Hidenori Miyoshi

IPC: H01L21/3065 ,  C23F4/00 ,  H01L21/3213 ,  H01L23/532 ,  H05H1/46

Abstract: A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container 12, and a third step of generating a plasma of a third gas in the processing container 12. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

公开(公告)号：US08999102B2

公开(公告)日：2015-04-07

申请号：US14306718

申请日：2014-06-17

Applicant: Tokyo Electron Limited

Inventor： Hidenori Miyoshi ,  Shuji Azumo

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/445 ,  H01L21/768 ,  H01L29/49 ,  H01L29/51 ,  H01L51/05 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  H01L51/00

CPC classification number: H01L21/02271 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02348 ,  H01L21/28026 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/32051 ,  H01L21/445 ,  H01L21/67069 ,  H01L21/76802 ,  H01L21/76874 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/51 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/0537

Abstract: In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate.

Abstract translation: 在形成具有形成在具有膜或衬底形状的半导体材料层上的用作栅极绝缘膜的氧化膜的MOS（金属氧化物半导体）结构的层叠衬底的方法中， 以及形成在氧化膜上的作为栅电极的导电膜，通过在暴露了半导体材料层的基板的表面上涂布聚硅烷溶液，形成半导体材料层上的聚硅烷膜。 通过在其上涂覆金属盐溶液，在聚硅烷膜上形成含有金属离子的膜，并将聚硅烷膜和含有金属离子的膜分别改性为聚硅氧烷膜和含有金属微粒的膜以形成层叠的基板。

公开(公告)号：US20150056381A1

公开(公告)日：2015-02-26

申请号：US14381100

申请日：2013-02-14

Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  TOKYO ELECTRON LIMITED

Inventor： Masaru Hori ,  Hirotaka Toyoda ,  Makoto Sekine ,  Keigo Takeda ,  Hiroki Kondo ,  Kenji Ishikawa ,  Yusuke Kubota ,  Hitoshi Itoh ,  Hidenori Miyoshi

IPC: H01B13/00 ,  C23C26/00 ,  H01J37/32 ,  C23C24/00

CPC classification number: H01B13/0026 ,  B01J19/088 ,  B01J19/126 ,  C23C18/08 ,  C23C18/14 ,  C23C24/00 ,  C23C26/00 ,  H01B13/003 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32266 ,  H01J37/32522 ,  H01J2237/327 ,  H01J2237/336 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/463 ,  H05K1/092 ,  H05K3/105 ,  H05K2203/095

Abstract: A method for forming a conductive film on a substrate includes forming a precursor-containing film on the substrate; and irradiating plasma of a treatment gas to the precursor-containing film by an atmospheric pressure plasma treatment device, removing the organic substances and forming a conductive film from the metallic fine particles or the metallic compounds, the atmospheric pressure plasma treatment device including: a microwave generator, a hollow waveguide, a gas supply device, and an antenna portion configured to discharge to the outside, whereby the treatment gas being converted to plasma by the microwaves, the plasma thus generated being irradiated to the precursor-containing film on the substrate, and a hydrogen radical density of the plasma at a position spaced apart 7 mm from the slot holes being equal to or higher than 2×1014/cm3.

Abstract translation: 在基板上形成导电膜的方法包括在基板上形成含有前体的膜; 通过大气压等离子体处理装置将处理气体的等离子体照射到含前体的膜上，除去有机物质并从金属微粒或金属化合物形成导电膜，所述大气压等离子体处理装置包括：微波 发电机，中空波导管，气体供给装置和配置成向外部排出的天线部，由此通过微波将处理气体转换成等离子体，将由此产生的等离子体照射到基板上的含前体的膜， 并且在与槽孔间隔开7mm的位置处的等离子体的氢自由基密度等于或高于2×10 14 / cm 3。

公开(公告)号：US20140008326A1

公开(公告)日：2014-01-09

申请号：US14023006

申请日：2013-09-10

Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  TOKYO ELECTRON LIMITED

Inventor： Hirotaka TOYODA ,  Masaru Hori ,  Makoto Sekine ,  Keigo Takeda ,  Hidenori Miyoshi ,  Hitoshi Itoh ,  Yusuke Kubota

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4622 ,  H05H2001/463

Abstract: A plasma generation device has a microwave generation device which generates microwave, a waveguide tube having hollow interior and connected to the microwave device such that the tube has longitudinal direction in transmission direction of microwave and rectangular cross section in direction orthogonal to the transmission direction, a phase-shifting device which cyclically shifts phase of standing wave generated in the tube by microwave, and a gas supply device which supplies processing gas into the tube. The tube has antenna portion having one or more slot holes which release plasma generated by microwave to the outside, the slot hole is formed on wall forming short or long side of the antenna portion, and the tube plasmatizes the gas in atmospheric pressure state supplied into the tube by the microwave in the slot hole and releases the plasma to the outside from the slot hole.

Abstract translation: 等离子体产生装置具有产生微波的微波产生装置，具有中空内部并与微波装置连接的波导管，使得管在微波的传输方向和与传输方向正交的方向上的矩形截面具有纵向方向，a 通过微波循环移动在管中产生的驻波的相位的相移装置，以及将处理气体供给到管中的气体供给装置。 该管具有一个具有一个或多个狭缝孔的天线部分，其将由微波产生的等离子体释放到外部，在形成天线部分的短边或长边的壁上形成槽孔，并且管将等离子体化处于供给的大气压状态 该管通过微波在槽孔中，并将等离子体从槽孔释放到外部。