公开(公告)号：US11121001B2

公开(公告)日：2021-09-14

申请号：US16991938

申请日：2020-08-12

Applicant: Tokyo Electron Limited

Inventor： Satoshi Yamada ,  Koki Chino ,  Yoshimitsu Kon

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/308 ,  H01L21/3065

Abstract: In a disclosed method, etching a film by using plasma of a first processing gas and etching the film by using plasma of a second processing gas are alternately repeated. The first processing gas and the second processing gas each include a fluorocarbon gas. In etching the film by using the plasma of the first processing gas and etching the film by using the plasma of the second processing gas, radio frequency power is used to attract ions to the substrate. The first processing gas further includes an additive gas that is a source for nitrogen or sulfur and fluorine. In the first processing gas, the flow rate of the additive gas is smaller than the flow rate of the fluorocarbon gas.

公开(公告)号：US10115567B2

公开(公告)日：2018-10-30

申请号：US14853140

申请日：2015-09-14

Applicant: Tokyo Electron Limited

Inventor： Taichi Hirano ,  Ken Yoshida ,  Hikoichiro Sasaki ,  Satoshi Yamada ,  Yoshinobu Hayakawa ,  Junji Ishibashi ,  Fumitoshi Kumagai

IPC: H01J37/32

Abstract: A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5

公开(公告)号：US10090161B2

公开(公告)日：2018-10-02

申请号：US15404471

申请日：2017-01-12

Applicant: Tokyo Electron Limited

Inventor： Shigeki Doba ,  Satoshi Yamada

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/687 ,  H01L21/768 ,  H01L21/311

Abstract: A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.

公开(公告)号：US09466468B2

公开(公告)日：2016-10-11

申请号：US14224109

申请日：2014-03-25

Applicant: Tokyo Electron Limited

Inventor： Nobuyuki Okayama ,  Koichi Kazama ,  Shuichiro Uda ,  Satoshi Yamada ,  Shinji Fuchigami

IPC: H01J37/22 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/45514 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/45574

Abstract: A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a second gas supply path provided in a region surrounding the region where the first gas supply path is provided. The first gas supply path has a first gas diffusion space connected to a first gas line of the gas supply unit, second gas lines, a second gas diffusion space, third gas lines and a third gas diffusion space which are connected in that order. The second gas supply path has a fourth gas diffusion space connected to a fourth gas line of the gas supply unit, fifth gas lines, a fifth gas diffusion space, sixth gas lines, and a sixth gas diffusion space which are connected in that order.

Abstract translation: 喷头包括气体注入板和气体供应单元。 气体供给单元具有设置在沿轴线的区域中的第一气体供给路径和设置在设置有第一气体供给路径的区域周围的区域中的第二气体供给路径。 第一气体供给路径具有连接到气体供给单元的第一气体管线，第二气体管线，第二气体扩散空间，第三气体管线和第三气体扩散空间的第一气体扩散空间。 第二气体供给路径具有连接到气体供给单元的第四气体管线，第五气体管线，第五气体扩散空间，第六气体管线和第六气体扩散空间的第四气体扩散空间，其依次连接。

公开(公告)号：US20160079037A1

公开(公告)日：2016-03-17

申请号：US14853140

申请日：2015-09-14

Applicant: Tokyo Electron Limited

Inventor： Taichi Hirano ,  Ken Yoshida ,  Hikoichiro Sasaki ,  Satoshi Yamada ,  Yoshinobu Hayakawa ,  Junji Ishibashi ,  Fumitoshi Kumagai

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183 ,  H01J2237/04

Abstract: A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5

Abstract translation: 等离子体处理装置可以有效地执行根据调制脉冲的占空比来交替地在高电平和低电平之间切换等离子体处理中使用的高频功率的脉冲调制方法。 在该等离子体处理装置中，当对等离子体产生的高频电力进行高/低脉冲调制时，如果将加权变量K设定为0.5