公开(公告)号：US20240128088A1

公开(公告)日：2024-04-18

申请号：US17967298

申请日：2022-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshiki KANAKI ,  Subhadeep KAL ,  Aelan MOSDEN ,  lvo OTTO, IV ,  Masashi MATSUMOTO ,  Shinji IRIE

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/30621 ,  H01L21/0245 ,  H01L21/02472

Abstract: Methods for selective etching of one layer or material relative to another layer or material adjacent thereto. In an example, a SiGe layer is etched relative to or selective to another silicon containing layer which either contains no germanium or geranium in an amount less than that of the target layer.

公开(公告)号：US20210358761A1

公开(公告)日：2021-11-18

申请号：US17277578

申请日：2019-06-24

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro TAKAHASHI ,  Keiji TANOUCHI ,  Shinji IRIE ,  Akitaka SHIMIZU

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching method includes a step of preparing a substrate having a portion to be etched, a step of plasma-etching the portion to be etched of the substrate into a predetermined pattern using plasma of a processing gas containing a CF-based gas, and then a step of removing a CF-based deposit which remains as an etching residue. The step of removing the CF-based deposit includes a step of forming an oxide including an oxide of the CF-based deposit using oxygen-containing radicals, and a step of removing the generated oxide by radical processing or chemical processing using gas.

公开(公告)号：US20200234974A1

公开(公告)日：2020-07-23

申请号：US16839176

申请日：2020-04-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Shinji IRIE ,  Nobuhiro TAKAHASHI ,  Ayano HAGIWARA ,  Tatsuya YAMAGUCHI

IPC: H01L21/3213 ,  H01L21/687 ,  H01L21/67 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/66

Abstract: There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

公开(公告)号：US20190355589A1

公开(公告)日：2019-11-21

申请号：US16413068

申请日：2019-05-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko ORII ,  Yasuo ASADA ,  Jun LIN ,  Ayano HAGIWARA ,  Shinji IRIE ,  Kenji TANOUCHI ,  Kakeru WADA

IPC: H01L21/3213 ,  H01L21/67

Abstract: There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an F2 gas and the second fluorine-containing gas including at least a ClF3 gas, an IF7 gas, an IF5 gas or an SF6 gas.

公开(公告)号：US20190198349A1

公开(公告)日：2019-06-27

申请号：US16232532

申请日：2018-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Shinji IRIE ,  Nobuhiro TAKAHASHI ,  Ayano HAGIWARA ,  Tatsuya YAMAGUCHI

IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01L29/66 ,  H01L21/02

Abstract: There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.