公开(公告)号：US20210313209A1

公开(公告)日：2021-10-07

申请号：US17267503

申请日：2019-07-26

Applicant: Tokyo Electron Limited

Inventor： Yoshinori IKEDA ,  Shota UMEZAKI ,  Shigeru MORIYAMA ,  Ryo YAMAMOTO ,  Takashi UNO

IPC: H01L21/673 ,  H01L21/02 ,  B08B3/10

Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).

公开(公告)号：US20250167010A1

公开(公告)日：2025-05-22

申请号：US18940110

申请日：2024-11-07

Applicant: Tokyo Electron Limited

Inventor： Mikio NAKASHIMA ,  Shota UMEZAKI ,  Takahiro HAYASHIDA

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus includes a processing container; and a processing fluid supply configured to supply a processing fluid in a supercritical state into the processing container. The processing fluid supply includes a fluid supply line connected to a fluid supply source and the processing container; a pump; a heater on a downstream side of the pump and configured to heat the processing fluid to generate the processing fluid in the supercritical state; a first flow rate adjuster between the pump and the heater; a first pressure measurement section between the first flow rate adjuster and the heater; a second pressure measurement section between the pump and the first flow rate adjuster; and a controller configured to control the second flow rate adjuster based on first and second pressures of the processing fluid in a liquid state measured by the first and second pressure measurement sections.

公开(公告)号：US20240242978A1

公开(公告)日：2024-07-18

申请号：US18413295

申请日：2024-01-16

Applicant: Tokyo Electron Limited

Inventor： Shota UMEZAKI ,  Shigeru MORIYAMA ,  Tomotaka OMAGARI ,  Keiichi YAHATA ,  Shuji OIE ,  Yuichi TANAKA ,  Katsuhiro OOKAWA ,  Manabu YAMANAKA ,  Takuya ITAHASHI

IPC: H01L21/67 ,  F26B5/04

CPC classification number: H01L21/67034 ,  F26B5/04 ,  H01L21/67126 ,  H01L21/67242

Abstract: A substrate processing apparatus includes a drying unit for replacing a liquid film formed on a substrate with a supercritical fluid to dry the substrate, and a control device. The drying unit includes a pressure container, a supply mechanism for supplying fluid to the pressure container, a discharge mechanism for discharging the fluid from the pressure container, a panel for separating an internal space from an external space, an electromagnetic lock, and a concentration sensor for detecting a concentration of the fluid. An unlocking condition for the control device to switch a state of the electromagnetic lock from a locked state to an unlocked state includes a condition that a detection value of the pressure sensor is less than or equal to a first threshold value and a condition that a detection value of the concentration sensor is less than or equal to a second threshold value.

公开(公告)号：US20240395589A1

公开(公告)日：2024-11-28

申请号：US18672505

申请日：2024-05-23

Applicant: Tokyo Electron Limited

Inventor： Shota UMEZAKI ,  Kouji KIMOTO ,  Masato OZEKI ,  Ryosuke KENZAKI

IPC: H01L21/677 ,  B23Q7/10 ,  B23Q7/14 ,  H01L21/67

Abstract: A substrate processing apparatus includes a process mechanism that processes a substrate. The process mechanism includes: a processing container that accommodates therein the substrate; a first supporting member that horizontally supports the substrate; and a second supporting member that horizontally supports the substrate at an outside of the processing container. The first supporting member and the second supporting member support the substrate such that a center axis of the substrate in the processing container and a center axis of the substrate at an outside of the processing container match, in a case where at least viewed from a direction where the substrate is carried-in to the container and carried-out from the container.

公开(公告)号：US20230352328A1

公开(公告)日：2023-11-02

申请号：US18220269

申请日：2023-07-11

Applicant: Tokyo Electron Limited

Inventor： Yoshinori IKEDA ,  Shota UMEZAKI ,  Shigeru MORIYAMA ,  Ryo YAMAMOTO ,  Takashi UNO

IPC: H01L21/673 ,  B08B3/10 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/67393 ,  B08B3/10 ,  H01L21/02057 ,  H01L21/67028

Abstract: A substrate processing method according to an embodiment of the present disclosure includes a step of holding a substrate by a substrate holding unit (31) which is rotatable, a step of arranging a top plate portion (41) above the substrate, a step of supplying a processing liquid to the substrate, and a step of supplying a rinsing liquid (Lr) between the substrate and the top plate portion (41) to wash the substrate and the top plate portion (41) with the rinsing liquid (Lr).

公开(公告)号：US20220059357A1

公开(公告)日：2022-02-24

申请号：US17519785

申请日：2021-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi KOSUGI ,  Shota UMEZAKI ,  Kouzou TACHIBANA ,  Ryo YAMAMOTO

IPC: H01L21/306 ,  H01L21/687 ,  H01L21/67

Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

公开(公告)号：US20240240859A1

公开(公告)日：2024-07-18

申请号：US18407499

申请日：2024-01-09

Applicant: Tokyo Electron Limited

Inventor： Shota UMEZAKI ,  Takahiro HAYASHIDA ,  Mikio NAKASHIMA ,  Takafumi YASUNAGA

IPC: F26B5/00 ,  F26B25/16

CPC classification number: F26B5/005 ,  F26B25/16 ,  H01L21/67034

Abstract: A substrate processing apparatus includes a drying unit configured to replace a liquid film formed on an upper surface of a substrate in a horizontal state with a supercritical fluid to dry the substrate, wherein the drying unit includes a pressure container provided with a drying chamber formed therein to dry the substrate, and a lid configured to close an opening of the pressure container, and the substrate processing apparatus further comprises a support member configured to support the lid so as to be movable in both a first direction parallel to the opening and a second direction opposite to the first direction.

公开(公告)号：US20240234172A9

公开(公告)日：2024-07-11

申请号：US18489229

申请日：2023-10-18

Applicant: Tokyo Electron Limited

Inventor： Takahiro HAYASHIDA ,  Shigeru MORIYAMA ,  Shota UMEZAKI

IPC: H01L21/67

CPC classification number: H01L21/67034 ,  F24H7/04

Abstract: A substrate processing apparatus that dries a liquid adhering to a substrate by using a processing fluid in a supercritical state, includes: a processing container in which the substrate is accommodated; a plurality of pipes configured to allow the processing fluid to flow to and from the processing container therethrough; a first fluid heating device configured to heat a first pipe that supplies the processing fluid to an interior of the processing container among the plurality of pipes; and a second fluid heating device configured to heat a second pipe that discharges the processing fluid from the interior of the processing container among the plurality of pipes.

公开(公告)号：US20240194496A1

公开(公告)日：2024-06-13

申请号：US18533256

申请日：2023-12-08

Applicant: Tokyo Electron Limited

Inventor： Shota UMEZAKI ,  Mikio NAKASHIMA ,  Takahiro HAYASHIDA

IPC: H01L21/67

CPC classification number: H01L21/67023 ,  H01L21/67253

Abstract: A substrate processing apparatus includes: a processing container in which a substrate is accommodated; a holder configured to hold the substrate in a horizontal posture at a holding position inside the processing container; and a fluid supplier configured to supply, into the processing container, a supercritical processing fluid for drying the substrate to which a liquid adheres, wherein the fluid supplier includes a first direction change member configured to change a flow of the supercritical processing fluid, supplied radially outward from the substrate held by the holder, in a direction that does not come in contact with a radial outer end of the substrate.

公开(公告)号：US20240136206A1

公开(公告)日：2024-04-25

申请号：US18489229

申请日：2023-10-17

Applicant: Tokyo Electron Limited

Inventor： Takahiro HAYASHIDA ,  Shigeru MORIYAMA ,  Shota UMEZAKI

IPC: H01L21/67

CPC classification number: H01L21/67034 ,  F24H7/04

Abstract: A substrate processing apparatus that dries a liquid adhering to a substrate by using a processing fluid in a supercritical state, includes: a processing container in which the substrate is accommodated; a plurality of pipes configured to allow the processing fluid to flow to and from the processing container therethrough; a first fluid heating device configured to heat a first pipe that supplies the processing fluid to an interior of the processing container among the plurality of pipes; and a second fluid heating device configured to heat a second pipe that discharges the processing fluid from the interior of the processing container among the plurality of pipes.