公开(公告)号：US10249478B2

公开(公告)日：2019-04-02

申请号：US14570116

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Sasaki ,  Takashi Kitazawa ,  Akihiro Yoshimura

IPC: C23C16/00 ,  H01J37/32

Abstract: A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber, a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber, and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber. The relay member is configured to receive a first gas flowing from the chamber into the relay member. The first gas has a first conductance. The first conductance is greater than a second conductance of a second gas flowing from the exhaust chamber into a gap between the relay member and the side wall of the chamber.

公开(公告)号：US10676823B2

公开(公告)日：2020-06-09

申请号：US15825310

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Takashi Kitazawa ,  Hiroshi Nagahata ,  Hideyuki Kobayashi ,  Koji Yamagishi

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/40

Abstract: A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.

公开(公告)号：US10553408B2

公开(公告)日：2020-02-04

申请号：US14326614

申请日：2014-07-09

Applicant: Tokyo Electron Limited

Inventor： Akihiro Yoshimura ,  Takashi Kitazawa ,  Yasushi Masuda

IPC: H01J37/32

Abstract: A supporting member is configured to support at least one pipe connecting a temperature adjusting unit with a substrate processing apparatus, wherein the temperature adjusting unit adjusts a temperature of an arbitrary component of the substrate processing apparatus, wherein an inside of the supporting member includes a hollow portion and the at least one pipe is arranged in the hollow portion.

公开(公告)号：US20180148838A1

公开(公告)日：2018-05-31

申请号：US15825310

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Takashi Kitazawa ,  Hiroshi Nagahata ,  Hideyuki Kobayashi ,  Koji Yamagishi

IPC: C23C16/455

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/45504 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/505

Abstract: A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.