公开(公告)号：US10553408B2

公开(公告)日：2020-02-04

申请号：US14326614

申请日：2014-07-09

Applicant: Tokyo Electron Limited

Inventor： Akihiro Yoshimura ,  Takashi Kitazawa ,  Yasushi Masuda

IPC: H01J37/32

Abstract: A supporting member is configured to support at least one pipe connecting a temperature adjusting unit with a substrate processing apparatus, wherein the temperature adjusting unit adjusts a temperature of an arbitrary component of the substrate processing apparatus, wherein an inside of the supporting member includes a hollow portion and the at least one pipe is arranged in the hollow portion.

公开(公告)号：US10249478B2

公开(公告)日：2019-04-02

申请号：US14570116

申请日：2014-12-15

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Sasaki ,  Takashi Kitazawa ,  Akihiro Yoshimura

IPC: C23C16/00 ,  H01J37/32

Abstract: A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber, a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber, and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber. The relay member is configured to receive a first gas flowing from the chamber into the relay member. The first gas has a first conductance. The first conductance is greater than a second conductance of a second gas flowing from the exhaust chamber into a gap between the relay member and the side wall of the chamber.

公开(公告)号：US20150228462A1

公开(公告)日：2015-08-13

申请号：US14426852

申请日：2013-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro Yoshimura ,  Yasushi Masuda ,  Nobutaka Sasaki

IPC: H01J37/32

CPC classification number: H01J37/32834 ,  B01J19/088 ,  B01J2219/0894 ,  H01J37/32091 ,  H01J37/32458 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32633 ,  H01J37/32715 ,  H01J37/32733 ,  H01L21/6719 ,  H01L21/68785

Abstract: In a plasma processing apparatus, a partition wall connects a mounting table and a bottom wall of a processing chamber. A power feed member is disposed within the space surrounded by the partition wall and connected to the mounting table. A driving frame extends into the space surrounded by the partition wall from the outside of the sidewall of the processing chamber to be connected to the bottom of the mounting table. A driving mechanism is disposed to the outside of the processing chamber to move the driving frame vertically. At the bottom of a gas exhaust space, an annular gas exhaust passageway is defined by the partition wall and the sidewall and bottom wall of the processing chamber. The gas exhaust unit is interconnected to the gas exhaust passageway through a gas exhaust port at the bottom wall of the processing chamber.

Abstract translation: 在等离子体处理装置中，分隔壁连接处理室的安装台和底壁。 供电部件设置在由分隔壁包围并与安装台连接的空间内。 驱动框架从处理室的侧壁的外侧延伸到由分隔壁包围的空间中，以连接到安装台的底部。 驱动机构设置在处理室的外部以使驱动框架垂直移动。 在排气空间的底部，由分隔壁和处理室的侧壁和底壁限定环形排气通道。 排气单元通过处理室底壁处的排气口与排气通道相互连接。