公开(公告)号：US10832891B2

公开(公告)日：2020-11-10

申请号：US15831564

申请日：2017-12-05

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Hideyuki Kobayashi ,  Hiroshi Nagahata ,  Jungwoo Na

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/033 ,  C23C16/458 ,  C23C16/505 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

Abstract: A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part.

公开(公告)号：US10676823B2

公开(公告)日：2020-06-09

申请号：US15825310

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Takashi Kitazawa ,  Hiroshi Nagahata ,  Hideyuki Kobayashi ,  Koji Yamagishi

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/40

Abstract: A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.

公开(公告)号：US20180158650A1

公开(公告)日：2018-06-07

申请号：US15831564

申请日：2017-12-05

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Hideyuki Kobayashi ,  Hiroshi Nagahata ,  Jungwoo Na

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. A shield part to block the first gas converted to plasma is provided around the pedestal. The plasma processing apparatus further includes an evacuation part configured to evacuate the process chamber through the shield part, and a second gas supply part configured to be able to supply a second gas to a space between the shield part and the evacuation part.

公开(公告)号：US20180148838A1

公开(公告)日：2018-05-31

申请号：US15825310

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Ryota Sakane ,  Takashi Kitazawa ,  Hiroshi Nagahata ,  Hideyuki Kobayashi ,  Koji Yamagishi

IPC: C23C16/455

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/45504 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/505

Abstract: A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.