公开(公告)号：US20210183685A1

公开(公告)日：2021-06-17

申请号：US17124139

申请日：2020-12-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sungjae LEE ,  Toshiya TSUKAHARA ,  Mitsuaki SATO ,  Tetsuji SATO

IPC: H01L21/687 ,  H01L21/683 ,  H01L21/67 ,  H01J37/32

Abstract: Provided is an edge ring to reduce the frequency of replacement of an edge ring used for plasma processing and to suppress the leakage of a heat transfer gas. The edge ring has an annular first member and an annular second member, the first member has a recess on the lower surface and is made of a first material having plasma resistance, and the second member is arranged in the recess of the first member and is made of a second material having a rigidity lower than that of the first material.

公开(公告)号：US20200066496A1

公开(公告)日：2020-02-27

申请号：US16545185

申请日：2019-08-20

Applicant: Tokyo Electron Limited

Inventor： Shingo KITAMURA ,  Koichi KAZAMA ,  Masahiro OGASAWARA ,  Susumu NOGAMI ,  Tetsuji SATO

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/3213

Abstract: An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.

公开(公告)号：US20230317425A1

公开(公告)日：2023-10-05

申请号：US18130879

申请日：2023-04-04

Applicant: Tokyo Electron Limited

Inventor： Ryoya ABE ,  Tetsuji SATO ,  Shin MATSUURA

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J2237/0268 ,  H01J2237/334

Abstract: A plasma processing apparatus comprising: a plasma processing chamber; a substrate support; and a baffle structure to surround the substrate support. The baffle structure includes an upper baffle plate having a plurality of first openings, each of the plurality of first openings having a first width, and a lower baffle plate having a plurality of second openings, each of the plurality of second openings having an upper opening portion and a lower opening portion. A liner structure surrounds a plasma processing space disposed above the substrate support, and includes an inner cylindrical liner and an outer cylindrical liner. The inner cylindrical liner has a plurality of third openings, each of the plurality of third openings having a fourth width. The outer cylindrical liner has a plurality of fourth openings, each of the plurality of fourth openings having an inner opening portion and an outer opening portion.

公开(公告)号：US20210272781A1

公开(公告)日：2021-09-02

申请号：US17186711

申请日：2021-02-26

Applicant: Tokyo Electron Limited

Inventor： Shojiro YAHATA ,  Tetsuji SATO

IPC: H01J37/32

Abstract: A plasma processing method of processing a substrate with plasma in a plasma processing apparatus. The plasma processing apparatus includes: a chamber configured to accommodate a substrate; an upper electrode structure forming an upper portion of the chamber and including a temperature-controlled plate, an electrode plate disposed below the temperature-controlled plate, and an electrostatic attractor, the electrostatic attractor including a contact surface, an attraction surface, a first electrode, and a second electrode; a power supply configured to apply a voltage to the first and second electrodes; and a temperature obtaining portion configured to acquire a temperature distribution of the electrode plate. The plasma processing method includes: acquiring, by the temperature obtaining portion, the temperature distribution; applying a first voltage to the first electrode and applying a second voltage to the second electrode according to the acquired temperature distribution; and processing the substrate with plasma.

公开(公告)号：US20240249907A1

公开(公告)日：2024-07-25

申请号：US18628269

申请日：2024-04-05

Applicant: Tokyo Electron Limited

Inventor： Tetsuji SATO

IPC: H01J37/20 ,  H01J37/32

CPC classification number: H01J37/20 ,  H01J37/32522 ,  H01J37/32568 ,  H01J37/32577

Abstract: A plasma processing apparatus comprises a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode structure disposed above the substrate support.
The upper electrode structure includes a cooling plate having a coolant channel, an electrode plate disposed below the cooling plate, and an electrostatic attracting film formed on a bottom surface of the cooling plate and configured to electrostatically attract the electrode plate. The electrostatic attracting film has a dielectric portion and at least one conductor portion disposed in the dielectric portion. The plasma processing apparatus further comprises a power supply electrically connected to the at least one conductor portion.

公开(公告)号：US20210249231A1

公开(公告)日：2021-08-12

申请号：US17160414

申请日：2021-01-28

Applicant: Tokyo Electron Limited

Inventor： Tetsuji SATO

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: A plasma processing apparatus includes a chamber, a lower electrode, an electrostatic chuck, an edge ring, a metal member, a driving unit, and a control device. The electrostatic chuck is provided on the lower electrode on which a substrate is placed. The edge ring is provided around the electrostatic chuck. The metal member is disposed along an outer wall of the lower electrode and is grounded. The driving unit moves the metal member along the outer wall of the lower electrode. The control device controls the driving unit to move the metal member so as to increase the area in which the outer wall of the lower electrode and the metal member overlap each other when viewed in a direction intersecting the surface of the outer wall of the lower electrode in accordance with an increase in the amount of wear of the edge ring.