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    Substrate processing apparatus and substrate processing method
    1.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US09378940B2

    公开(公告)日：2016-06-28

    申请号：US13916826

    申请日：2013-06-13

    Applicant: Tokyo Electron Limited

    Inventor： Hisashi Kawano ,  Norihiro Ito ,  Yosuke Hachiya ,  Jun Nogami ,  Kotaro Ooishi ,  Itaru Kanno

    IPC: H01L21/02 ,  H01L21/67 ,  H01L21/311

    CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

    Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

    Abstract translation: 本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。

    LIQUID PROCESSING METHOD
    2.
    发明申请
    LIQUID PROCESSING METHOD 审中-公开
    液体加工方法

    公开(公告)号：US20150107631A1

    公开(公告)日：2015-04-23

    申请号：US14580787

    申请日：2014-12-23

    Applicant: Tokyo Electron Limited

    Inventor： Takao Inada ,  Naoyuki Okamura ,  Hidetsugu Yano ,  Yosuke Hachiya

    IPC: H01L21/67

    CPC classification number: H01L21/67028 ,  H01L21/67017 ,  H01L21/67051 ,  Y10S134/902

    Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

    Abstract translation: 提供一种液体处理方法，用于通过使用处理溶液在基板的前表面上进行液体处理，然后通过使用温度低于基板的温度的冲洗溶液在基板的前表面上进行冲洗处理 处理方案。 该方法包括在液体处理和漂洗过程之间执行中间过程，用于将衬底的前表面的温度调节到高于冲洗溶液的温度并低于处理溶液的温度的温度。 在中间方法中，将仅具有比冲洗溶液的温度高且低于处理液的温度的中间处理液供给到基板的背面。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    3.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
    基板处理装置和基板处理方法

    公开(公告)号：US20130340796A1

    公开(公告)日：2013-12-26

    申请号：US13916826

    申请日：2013-06-13

    Applicant: Tokyo Electron Limited

    Inventor： Hisashi Kawano ,  Norihiro Ito ,  Yosuke Hachiya ,  Jun Nogami ,  Kotaro Ooishi ,  Itaru Kanno

    IPC: H01L21/02

    CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

    Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

    Abstract translation: 本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
    4.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
    基板处理装置和基板处理方法

    公开(公告)号：US20130284213A1

    公开(公告)日：2013-10-31

    申请号：US13858248

    申请日：2013-04-08

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Yosuke Hachiya ,  Norihiro Ito ,  Hisashi Kawano ,  Jun Nonaka ,  Jun Nogami

    IPC: H01L21/02

    CPC classification number: H01L21/02076 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/6708

    Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: generating an SPM liquid of a first temperature that contains Caro's acid having a separation effect of a resist film formed on the surface of a substrate by mixing heated sulfuric acid with hydrogen peroxide; cooling the SPM liquid to a second temperature at which a reduction effect of film loss occurs; and applying the SPM liquid of the second temperature to the resist film thereby separating the resist film.

    Abstract translation: 本公开提供了一种基板处理方法和基板处理装置。 基板处理方法包括：通过将加热的硫酸与过氧化氢混合，生成含有形成在基板表面上的抗蚀剂膜的分离效果的含有Caro酸的第一温度的SPM液体; 将SPM液体冷却至发生膜损失的还原效果的第二温度; 并将第二温度的SPM液体施加到抗蚀剂膜上，从而分离抗蚀剂膜。

    Liquid processing method
    5.
    发明授权
    Liquid processing method 有权
    液体加工方法

    公开(公告)号：US09224624B2

    公开(公告)日：2015-12-29

    申请号：US14580787

    申请日：2014-12-23

    Applicant: Tokyo Electron Limited

    Inventor： Takao Inada ,  Naoyuki Okamura ,  Hidetsugu Yano ,  Yosuke Hachiya

    IPC: B08B7/00 ,  B08B3/00 ,  B08B7/04 ,  H01L21/67

    CPC classification number: H01L21/67028 ,  H01L21/67017 ,  H01L21/67051 ,  Y10S134/902

    Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

    Abstract translation: 提供一种液体处理方法，用于通过使用处理溶液在基板的前表面上进行液体处理，然后通过使用温度低于基板的温度的冲洗溶液在基板的前表面上进行冲洗处理 处理方案。 该方法包括在液体处理和漂洗过程之间执行中间过程，用于将衬底的前表面的温度调节到高于冲洗溶液的温度并低于处理溶液的温度的温度。 在中间方法中，将仅具有比冲洗溶液的温度高且低于处理液的温度的中间处理液供给到基板的背面。

    SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD
    6.
    发明申请
    SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD 有权
    基板液体处理装置和底板液体处理方法

    公开(公告)号：US20150318183A1

    公开(公告)日：2015-11-05

    申请号：US14689129

    申请日：2015-04-17

    Applicant: Tokyo Electron Limited

    Inventor： Yasuyuki Ido ,  Naoki Shindo ,  Takehiko Orii ,  Keisuke Egashira ,  Yosuke Hachiya ,  Kotaro Ooishi ,  Hisashi Kawano ,  Shinichiro Shimomura

    IPC: H01L21/31 ,  H01L21/67 ,  H01L21/306

    CPC classification number: H01L21/67051 ,  B05B12/14 ,  B05C11/115 ,  H01L21/306 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/6715

    Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

    Abstract translation: 公开了一种基板液体处理装置。 基板液体处理装置包括处理单元，喷嘴，甲硅烷基化液供给机构和阻塞流体供给机构。 处理单元通过向基板供给甲硅烷化液体，在基板上进行防水赋予处理。 喷嘴包括被配置为将甲硅烷化液体供给到位于处理单元中的基板的喷射口，以及甲硅烷基化液体流路，其中甲硅烷基化液体朝向喷射口流动。 甲硅烷基化液体供应机构通过甲硅烷基化液体供应管线将甲硅烷基化液体提供给喷嘴中的甲硅烷基化液体流动路径。 阻塞流体供应机构从喷射口外部的大气中提供阻塞流体，该阻塞流体在喷嘴内的甲硅烷基化液体流动通道内阻断甲硅烷基化液体。

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