公开(公告)号：US11189498B2

公开(公告)日：2021-11-30

申请号：US16413068

申请日：2019-05-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko Orii ,  Yasuo Asada ,  Jun Lin ,  Ayano Hagiwara ,  Shinji Irie ,  Kenji Tanouchi ,  Kakeru Wada

IPC: H01L21/3213 ,  H01L21/67

Abstract: There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an F2 gas and the second fluorine-containing gas including at least a ClF3 gas, an IF7 gas, an IF5 gas or an SF6 gas.

公开(公告)号：US09799538B2

公开(公告)日：2017-10-24

申请号：US14025218

申请日：2013-09-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako Kaneko ,  Takehiko Orii ,  Itaru Kanno

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/68728 ,  H01L21/68792

Abstract: A substrate cleaning system has a first processing apparatus including a first holding device for holding a substrate, and a treatment solution supply device for supplying onto the entire portion of the front surface of the substrate a treatment solution which includes a volatile component and solidifies or is cured to form a treatment film, and a second processing apparatus including a second holding device for holding the substrate, and a removal-solution supply device for supplying onto the substrate a removal solution which removes the treatment film formed on the front surface of the substrate after the treatment solution supplied by the treatment solution supply device solidifies or is cured.

公开(公告)号：US09583330B2

公开(公告)日：2017-02-28

申请号：US14283874

申请日：2014-05-21

Applicant: Tokyo Electron Limited

Inventor： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC: F26B3/00 ,  H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/02 ,  H01L21/67

CPC classification number: H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

Abstract: A supercritical drying method for a semiconductor substrate is disclosed. The method may include introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method may also include performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract translation: 公开了一种用于半导体衬底的超临界干燥方法。 该方法可以包括将半导体衬底以半导体衬底的醇湿润的状态引入半导体衬底，用二氧化碳的超临界流体代替半导体衬底上的醇，通过将半导体衬底浸渍到超临界流体中 并且从室中排出超临界流体和醇，并减小室内的压力。 该方法还可以包括在室内压力降低之后，向室内供给氧气或臭氧气体进行烘烤处理。

公开(公告)号：US20160163534A1

公开(公告)日：2016-06-09

申请号：US15041273

申请日：2016-02-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Takehiko Orii ,  Satoru Shimura ,  Masami Yamashita ,  Itaru Kanno

IPC: H01L21/02 ,  B08B3/08

CPC classification number: H01L21/0206 ,  B08B3/08 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/68728

Abstract: A method for cleaning a substrate includes setting a substrate inside a cleaning chamber, supplying on a surface of the substrate a treatment solution which includes a volatile component and forms a treatment film, vaporizing the volatile component of the treatment solution supplied on the surface of the substrate such that the treatment solution solidifies or is cured on the surface of the substrate and the treatment film is formed on the surface of the substrate, and supplying onto the treatment film formed on the surface of the substrate a removal solution which removes the treatment film.

Abstract translation: 一种清洗基板的方法，其特征在于，在清洗室内设置基板，向所述基板的表面供给包含挥发成分的处理液，形成处理膜，将所述处理液的所述挥发成分蒸发， 基板，使得处理溶液在基板的表面上固化或固化，并且在基板的表面上形成处理膜，并且向基板表面上形成的处理膜供给去除处理膜的去除溶液 。

公开(公告)号：US20150128995A1

公开(公告)日：2015-05-14

申请号：US14539206

申请日：2014-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Keiji Tanouchi ,  Takehiko Orii ,  Itaru Kanno

IPC: H01L21/02 ,  H01L21/677 ,  B08B3/04 ,  H01L21/67

CPC classification number: H01L21/02063 ,  B08B7/0014 ,  C11D11/0047 ,  H01L21/67051

Abstract: A method for cleaning a substrate, includes supplying to a substrate having a hydrophilic surface a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the hydrophilic surface of the substrate, and supplying to the substrate having the processing film a strip-processing liquid for stripping the processing film from the substrate.

Abstract translation: 一种清洗基板的方法，包括向具有亲水表面的基板供给包含挥发性成分的成膜处理液，并在基板上形成膜，使成膜处理液中的挥发成分蒸发，使得膜 在衬底的亲水表面上固化或固化在衬底上并在衬底的亲水表面上形成处理膜，并且向具有处理膜的衬底提供用于从衬底剥离处理膜的剥离处理液。

公开(公告)号：US20150064911A1

公开(公告)日：2015-03-05

申请号：US14468796

申请日：2014-08-26

Applicant: Tokyo Electron Limited

Inventor： Miyako Kaneko ,  Takehiko Orii ,  Itaru Kanno

IPC: H01L21/67 ,  B05B9/00 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02

CPC classification number: B05B9/00 ,  B05B7/2497 ,  B05B12/14 ,  B05B13/0228 ,  B05B16/20 ,  H01L21/02063 ,  H01L21/6715 ,  H01L21/76814

Abstract: Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.

Abstract translation: 生产力可以提高。 基板处理方法包括：处理液供给处理，其将含有挥发性成分的处理液供给到在基板上形成膜的基板上，在预处理后，在预处理之后， 治疗，执行; 以及在转印容器中容纳处理液体通过挥发性成分的挥发固化或固化的基板的收纳工序。

公开(公告)号：US20140144465A1

公开(公告)日：2014-05-29

申请号：US14025218

申请日：2013-09-12

Applicant: Tokyo Electron Limited

Inventor： Miyako KANEKO ,  Takehiko Orii ,  Itaru Kanno

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/68728 ,  H01L21/68792

Abstract: A substrate cleaning system has a first processing apparatus including a first holding device for holding a substrate, and a treatment solution supply device for supplying onto the entire portion of the front surface of the substrate a treatment solution which includes a volatile component and solidifies or is cured to form a treatment film, and a second processing apparatus including a second holding device for holding the substrate, and a removal-solution supply device for supplying onto the substrate a removal solution which removes the treatment film formed on the front surface of the substrate after the treatment solution supplied by the treatment solution supply device solidifies or is cured.

Abstract translation: 基板清洗系统具有第一处理装置，该第一处理装置包括用于保持基板的第一保持装置和处理液供给装置，该处理液供给装置向基板的前表面的整个部分供给含有挥发性成分的固化或固化的处理液 固化以形成处理膜，以及包括用于保持基板的第二保持装置的第二处理装置和用于向基板提供除去形成在基板的前表面上的处理膜的去除溶液的去除溶液供给装置 在由处理溶液供给装置供给的处理液固化或固化后。

公开(公告)号：US10734243B2

公开(公告)日：2020-08-04

申请号：US15841147

申请日：2017-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuhung Huang ,  Jun Lin ,  Takehiko Orii

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/677 ,  H01L21/306

Abstract: In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.

公开(公告)号：US20150318183A1

公开(公告)日：2015-11-05

申请号：US14689129

申请日：2015-04-17

Applicant: Tokyo Electron Limited

Inventor： Yasuyuki Ido ,  Naoki Shindo ,  Takehiko Orii ,  Keisuke Egashira ,  Yosuke Hachiya ,  Kotaro Ooishi ,  Hisashi Kawano ,  Shinichiro Shimomura

IPC: H01L21/31 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L21/67051 ,  B05B12/14 ,  B05C11/115 ,  H01L21/306 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/6715

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Abstract translation: 公开了一种基板液体处理装置。 基板液体处理装置包括处理单元，喷嘴，甲硅烷基化液供给机构和阻塞流体供给机构。 处理单元通过向基板供给甲硅烷化液体，在基板上进行防水赋予处理。 喷嘴包括被配置为将甲硅烷化液体供给到位于处理单元中的基板的喷射口，以及甲硅烷基化液体流路，其中甲硅烷基化液体朝向喷射口流动。 甲硅烷基化液体供应机构通过甲硅烷基化液体供应管线将甲硅烷基化液体提供给喷嘴中的甲硅烷基化液体流动路径。 阻塞流体供应机构从喷射口外部的大气中提供阻塞流体，该阻塞流体在喷嘴内的甲硅烷基化液体流动通道内阻断甲硅烷基化液体。

公开(公告)号：US20150258465A1

公开(公告)日：2015-09-17

申请号：US14644458

申请日：2015-03-11

Applicant: Tokyo Electron Limited

Inventor： Kazuyuki Mitsuoka ,  Hiroki Ohno ,  Takehiko Orii ,  Takayuki Toshima

IPC: B01D3/02 ,  H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/02057 ,  H01L21/02101

Abstract: Disclosed is a separation and regeneration apparatus including: a supercritical processing unit configured to generate a mixed gas including a first fluorine-containing organic solvent having a first boiling point and a second fluorine-containing organic solvent having a second boiling point lower than the first boiling point; and a distillation tank configured to store hot water having a temperature between the first boiling point and the second boiling point, in which the mixed gas is input into the hot water to be separated into the first fluorine-containing organic solvent in a liquid state and the second fluorine-containing organic solvent in a gas state, in which an introduction line configured to guide the mixed gas from the supercritical processing unit to the distillation tank is provided and a distal end of the introduction line is disposed in the hot water.

Abstract translation: 公开了一种分离再生装置，其特征在于，包括：超临界处理装置，其构成为，生成包含第一沸点的第一含氟有机溶剂和第二含氟有机溶剂的混合气体，所述第二含氟有机溶剂的第二沸点低于第一沸点 点; 以及蒸馏罐，其被配置为存储温度在第一沸点和第二沸点之间的温度，其中混合气体以液态输入到要分离成热的第一含氟有机溶剂的热水中， 在气体状态下设置第二含氟有机溶剂，其中将从超临界处理单元引导混合气体的引入管线设置到蒸馏罐，并且引入管线的远端设置在热水中。