公开(公告)号：US09378940B2

公开(公告)日：2016-06-28

申请号：US13916826

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Hisashi Kawano ,  Norihiro Ito ,  Yosuke Hachiya ,  Jun Nogami ,  Kotaro Ooishi ,  Itaru Kanno

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract translation: 本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。

公开(公告)号：US09922849B2

公开(公告)日：2018-03-20

申请号：US14689129

申请日：2015-04-17

Applicant: Tokyo Electron Limited

Inventor： Yasuyuki Ido ,  Naoki Shindo ,  Takehiko Orii ,  Keisuke Egashira ,  Yosuke Hachiya ,  Kotaro Ooishi ,  Hisashi Kawano ,  Shinichiro Shimomura

IPC: H01L21/67 ,  H01L21/31 ,  H01L21/306 ,  B05B12/14 ,  B05C11/115

CPC classification number: H01L21/67051 ,  B05B12/14 ,  B05C11/115 ,  H01L21/306 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/6715

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

公开(公告)号：US20170236729A1

公开(公告)日：2017-08-17

申请号：US15432044

申请日：2017-02-14

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Kouzou Tachibana ,  Mitsunori Nakamori ,  Kotaro Ooishi ,  Keisuke Egashira ,  Koji Tanaka ,  Hiroaki Inadomi ,  Masami Yamashita ,  Yoshiteru Fukuda ,  Koji Yamashita ,  Yu Tsurifune ,  Takuro Masuzumi

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/04 ,  B08B3/10 ,  B08B3/14 ,  H01L21/02 ,  B08B3/08

CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/67028

Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

公开(公告)号：US20130340796A1

公开(公告)日：2013-12-26

申请号：US13916826

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Hisashi Kawano ,  Norihiro Ito ,  Yosuke Hachiya ,  Jun Nogami ,  Kotaro Ooishi ,  Itaru Kanno

IPC: H01L21/02

CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract translation: 本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。

公开(公告)号：US20170301534A1

公开(公告)日：2017-10-19

申请号：US15518013

申请日：2015-10-20

Applicant: Tokyo Electron Limited

Inventor： Mitsunori Nakamori ,  Teruomi Minami ,  Kotaro Ooishi ,  Jun Nonaka

IPC: H01L21/02 ,  B08B3/10 ,  B08B3/04 ,  B08B3/08 ,  H01L21/687 ,  H01L21/67

Abstract: This liquid treatment method for substrates involves performing: a liquid treatment step for liquid-treating a substrate with a treatment liquid; a rinse treatment step for rinsing the liquid-treated substrate with a rinsing liquid; a water-repellency treatment step for subjecting the rinsed substrate to a water-repellency treatment using a water-repellency-imparting solution; next, a substitution treatment step for subjecting the substrate subjected to the water-repellency treatment to a substitution treatment acceleration liquid; a cleaning treatment step for cleaning the substrate subjected to the water-repellency treatment by using a cleaning solution; and thereafter, a drying treatment step for substituting the cleaning solution with a drying solution having a higher volatility than that of the cleaning solution, and removing the drying solution from the substrate. Thus, it is possible to prevent pattern collapse during the drying treatment, and to decrease particles caused by watermarks.

公开(公告)号：US20150318183A1

公开(公告)日：2015-11-05

申请号：US14689129

申请日：2015-04-17

Applicant: Tokyo Electron Limited

Inventor： Yasuyuki Ido ,  Naoki Shindo ,  Takehiko Orii ,  Keisuke Egashira ,  Yosuke Hachiya ,  Kotaro Ooishi ,  Hisashi Kawano ,  Shinichiro Shimomura

IPC: H01L21/31 ,  H01L21/67 ,  H01L21/306

CPC classification number: H01L21/67051 ,  B05B12/14 ,  B05C11/115 ,  H01L21/306 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/6715

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Abstract translation: 公开了一种基板液体处理装置。 基板液体处理装置包括处理单元，喷嘴，甲硅烷基化液供给机构和阻塞流体供给机构。 处理单元通过向基板供给甲硅烷化液体，在基板上进行防水赋予处理。 喷嘴包括被配置为将甲硅烷化液体供给到位于处理单元中的基板的喷射口，以及甲硅烷基化液体流路，其中甲硅烷基化液体朝向喷射口流动。 甲硅烷基化液体供应机构通过甲硅烷基化液体供应管线将甲硅烷基化液体提供给喷嘴中的甲硅烷基化液体流动路径。 阻塞流体供应机构从喷射口外部的大气中提供阻塞流体，该阻塞流体在喷嘴内的甲硅烷基化液体流动通道内阻断甲硅烷基化液体。