公开(公告)号：US20240234111A9

公开(公告)日：2024-07-11

申请号：US17972958

申请日：2022-10-25

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32926

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.

公开(公告)号：US20240133742A1

公开(公告)日：2024-04-25

申请号：US17973083

申请日：2022-10-24

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Andrej Mitrovic ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: G01J3/443 ,  G01J3/02

CPC classification number: G01J3/443 ,  G01J3/0205

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

公开(公告)号：US20240339309A1

公开(公告)日：2024-10-10

申请号：US18298259

申请日：2023-04-10

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Francisco Machuca ,  Blaze Messer ,  Yan Chen ,  Ying Zhu ,  Mihail Mihaylov ,  Joel Ng ,  Ashawaraya Shalini ,  Da Song ,  Akiteru Ko

IPC: H01J37/32 ,  H01J37/18

CPC classification number: H01J37/32972 ,  H01J37/18 ,  H01J37/32357 ,  H01J37/32963 ,  H01J2237/3343

Abstract: A processing system that includes: a processing chamber configured to hold a substrate to be processed; a first vacuum pump; a second vacuum pump disposed downstream from the first vacuum pump; an exhaust gas line connecting the process chamber and the first vacuum pump, and the first vacuum pump and the second vacuum pump; a plasma power supply including a first RF power source configured to generate a plasma from a portion of an exhaust gas between the first and second vacuum pumps; and an optical emission spectroscopy (OES) measurement assembly including an OES detector configured to measure OES signals from the plasma.

公开(公告)号：US20240136164A1

公开(公告)日：2024-04-25

申请号：US17972958

申请日：2022-10-24

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32926

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.

公开(公告)号：US12158374B2

公开(公告)日：2024-12-03

申请号：US17973083

申请日：2022-10-25

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Andrej Mitrovic ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: G01J3/44 ,  G01J3/02 ,  G01J3/443

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

公开(公告)号：US20240230409A9

公开(公告)日：2024-07-11

申请号：US17973083

申请日：2022-10-25

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Andrej Mitrovic ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: G01J3/443 ,  G01J3/02

CPC classification number: G01J3/443 ,  G01J3/0205

Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.

公开(公告)号：US20240094056A1

公开(公告)日：2024-03-21

申请号：US17948407

申请日：2022-09-20

Applicant: Tokyo Electron Limited

Inventor： Sergey Voronin ,  Blaze Messer ,  Yan Chen ,  Joel Ng ,  Ashawaraya Shalini ,  Ying Zhu ,  Da Song

IPC: G01J3/443 ,  H01J37/32

CPC classification number: G01J3/443 ,  H01J37/32146 ,  H01J37/32972 ,  H01J2237/24485 ,  H01J2237/24507 ,  H01J2237/24585 ,  H01J2237/334

Abstract: A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.