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公开(公告)号：US20240133742A1
公开(公告)日：2024-04-25
申请号：US17973083
申请日：2022-10-24
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Andrej Mitrovic , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
CPC classification number: G01J3/443 , G01J3/0205
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.
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公开(公告)号：US20170140905A1
公开(公告)日：2017-05-18
申请号：US15351916
申请日：2016-11-15
Applicant: Tokyo Electron Limited
Inventor： Mihail Mihaylov , Xinkang Tian , Ching-Ling Meng , Jason Ferns , Joel Ng , Badru D. Hyatt , Zheng Yan , Vi Vuong
Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.
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公开(公告)号：US20250157801A1
公开(公告)日：2025-05-15
申请号：US18505810
申请日：2023-11-09
Applicant: Tokyo Electron Limited
Inventor： Francisco Machuca , Joel Ng , Mihail Mihaylov , Xinkang Tian
IPC: H01J37/32
Abstract: An optical emission spectroscopy (OES) detection device includes an optical collector configured to be optically coupled to a plasma in a plasma processing apparatus, an adjustable wavelength filter optically coupled to the optical collector, and a photodetector optically coupled to the adjustable wavelength filter. The optical collector receives an optical signal from the plasma. The adjustable wavelength filter is configured to automatically adjust a passband of the adjustable wavelength filter to include a selected wavelength in response to receiving a wavelength selection signal, and allow a filtered portion of the optical signal to pass through while excluding a remaining portion of the optical signal. The filtered portion includes the selected wavelength. The photodetector is configured to generate an OES measurement in response to detecting the filtered portion of the optical signal with a response time that is less than one millisecond.
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公开(公告)号：US20240234111A9
公开(公告)日：2024-07-11
申请号：US17972958
申请日：2022-10-25
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
IPC: H01J37/32
CPC classification number: H01J37/32972 , H01J37/32926
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.
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公开(公告)号：US20240339309A1
公开(公告)日：2024-10-10
申请号：US18298259
申请日：2023-04-10
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Francisco Machuca , Blaze Messer , Yan Chen , Ying Zhu , Mihail Mihaylov , Joel Ng , Ashawaraya Shalini , Da Song , Akiteru Ko
CPC classification number: H01J37/32972 , H01J37/18 , H01J37/32357 , H01J37/32963 , H01J2237/3343
Abstract: A processing system that includes: a processing chamber configured to hold a substrate to be processed; a first vacuum pump; a second vacuum pump disposed downstream from the first vacuum pump; an exhaust gas line connecting the process chamber and the first vacuum pump, and the first vacuum pump and the second vacuum pump; a plasma power supply including a first RF power source configured to generate a plasma from a portion of an exhaust gas between the first and second vacuum pumps; and an optical emission spectroscopy (OES) measurement assembly including an OES detector configured to measure OES signals from the plasma.
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Patent Agency Ranking
公开(公告)号：US20240136164A1
公开(公告)日：2024-04-25
申请号：US17972958
申请日：2022-10-24
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
IPC: H01J37/32
CPC classification number: H01J37/32972 , H01J37/32926
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of the plasma processing chamber for a first time duration; and after the first time duration, determining a process endpoint by: while exposing the substrate to the plasma by applying the first power to the first electrode, applying a second power to a second electrode of the plasma processing chamber for a second time duration that is shorter than the first time duration; and obtaining an optical emission spectrum (OES) from the plasma while applying the second power to the second electrode, where an energy of the second power over the second time duration is less than an energy of the first power over a sum of the first and the second time durations by a factor of at least 2.
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公开(公告)号：US10692705B2
公开(公告)日：2020-06-23
申请号：US15351916
申请日：2016-11-15
Applicant: Tokyo Electron Limited
Inventor： Mihail Mihaylov , Xinkang Tian , Ching-Ling Meng , Jason Ferns , Joel Ng , Badru D. Hyatt , Zheng Yan , Vi Vuong
Abstract: An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.
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公开(公告)号：US12158374B2
公开(公告)日：2024-12-03
申请号：US17973083
申请日：2022-10-25
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Andrej Mitrovic , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.
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公开(公告)号：US20240230409A9
公开(公告)日：2024-07-11
申请号：US17973083
申请日：2022-10-25
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Andrej Mitrovic , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
CPC classification number: G01J3/443 , G01J3/0205
Abstract: A method of processing a substrate that includes: exposing the substrate in a plasma processing chamber to a plasma powered by applying a first power to a first electrode of a plasma processing chamber; turning OFF the first power to the first electrode after the first time duration; while the first power is OFF, applying a second power to a second electrode of the plasma processing chamber for a second time duration, the second time duration being shorter than the first time duration, an energy of the second power over the second time duration is less than an energy of the first power over the first time duration by a factor of at least 2; and detecting an optical emission spectrum (OES) from species in the plasma processing chamber.
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公开(公告)号：US20240094056A1
公开(公告)日：2024-03-21
申请号：US17948407
申请日：2022-09-20
Applicant: Tokyo Electron Limited
Inventor： Sergey Voronin , Blaze Messer , Yan Chen , Joel Ng , Ashawaraya Shalini , Ying Zhu , Da Song
CPC classification number: G01J3/443 , H01J37/32146 , H01J37/32972 , H01J2237/24485 , H01J2237/24507 , H01J2237/24585 , H01J2237/334
Abstract: A method of characterizing a plasma in a plasma processing system that includes: generating a pulsed plasma in a plasma processing chamber of the plasma processing system, the pulsed plasma being powered with a pulsed power signal, each pulse of the pulsed plasma including three periods: a overshoot period, a stable-ON period, and a decay period; performing cyclic optical emission spectroscopy (OES) measurements for the pulsed plasma, the cyclic OES measurements including: obtaining first OES data during one of the three periods from more than one pulses of the pulsed plasma; and obtaining a characteristic of the pulsed plasma for the one of the three periods based only on the first OES data.
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