Abstract:
Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space a microwave generator configured to generate microwaves for generating plasma of a processing gas introduced into the processing space, a distributor configured to distribute the microwaves to a plurality of waveguides using a variable distribution ratio, an antenna installed in the processing container to seal the processing space and configured to radiate the microwaves distributed to each of the plurality of waveguides by the distributor to the processing space, a monitor unit configured to monitor a power of the microwaves distributed to each of the plurality of waveguides by the distributor, and a distribution ratio control unit configured to correct the distribution ratio used for distribution of the microwaves by the distributor based on a difference between a ratio of the power of the microwaves monitored by the monitor unit and a previously designated distribution ratio.
Abstract:
A method includes measuring first travelling wave power of a microwave having a single frequency peak and second travelling wave power having a single frequency peak, acquiring duty ratios of the first travelling wave power and the second travelling wave power based on measured values and a first determination threshold value, measuring third travelling wave power of a microwave having a bandwidth and fourth travelling wave power having a bandwidth, acquiring duty ratios of the third travelling wave power and the fourth travelling wave power based on measured values and a second determination threshold value, approximating a pulse width error between the first travelling wave power and the third travelling wave power and a pulse width error between the second travelling wave power and the fourth travelling wave power with linear functions, and determining the correction function based on the linear functions.
Abstract:
A detection device includes a substrate on which a connector connected to a transmission line for microwaves, a detection circuit configured to convert the microwaves inputted from the transmission line via the connector to a detection value indicating power of the microwaves, and an output port configured to output the detection value obtained by the detection circuit are disposed. The detection device further includes a housing that has a first opening and a second opening and accommodates the substrate in a state where the connector is inserted into the first opening and the output port is inserted into the second opening. The detection device further includes a first sealing member provided at the first opening of the housing to seal a periphery of the connector; and a second sealing member provided at the second opening of the housing to seal a periphery of the output port.
Abstract:
A microwave generator of a plasma processing apparatus of an embodiment includes a first module, a second module, and a combiner. The first module includes a distributor which distributes a high-frequency electric signal, and outputs a plurality of high-frequency electric signals. A plurality of amplifier modules of the second module respectively amplify the plurality of high-frequency electric signals from the first module to output a plurality of microwaves. The combiner combines the plurality of microwaves from the plurality of amplifier modules to output a microwave. Each of the plurality of amplifier modules has a DC/DC converter and an amplifier. The DC/DC converter steps down the voltage of a first direct-current power from an external direct-current power supply to output a second direct-current power. The amplifier amplifies a high-frequency electric signal by using the second direct-current power to output a microwave.
Abstract:
There is provided a plasma processing apparatus. The apparatus comprises: a chamber body; and a power supply unit configured to output power for exciting a gas supplied to an inside of the chamber body. The power supply unit supplies, as power having a center frequency, a bandwidth, and a carrier pitch respectively corresponding to a set frequency, a set bandwidth, and a set carrier pitch that are indicated by a controller, power which is pulse-modulated so as to be a pulse frequency, a duty ratio, a high level, and a low level respectively corresponding to a set pulse frequency, a set duty ratio, a high-level set power, and a low-level set power indicated by the controller, and in which a pulse on time determined by the set pulse frequency and the set duty ratio is longer than a power fluctuation cycle of the power having the bandwidth.
Abstract:
Disclosed is a plasma processing apparatus including a processing container, a plasma generation mechanism, a regulation unit, a detection unit, and a determination unit. The plasma generation mechanism includes a microwave oscillator, and generates plasma within the processing container using microwaves oscillated by the microwave oscillator. The regulation unit regulates an oscillation frequency, which corresponds to a frequency of the microwaves oscillated by the microwave oscillator, to a predetermined frequency. The detection unit detects the oscillation frequency regulated to the predetermined frequency by the regulation unit. The determination unit determines the success/failure of regulation of the oscillation frequency by the regulation unit, using the oscillation frequency detected by the detection unit, or using a parameter which is changed depending on a difference between the oscillation frequency and the predetermined frequency.
Abstract:
A plasma processing apparatus performs plasma processing in a manner that first and second radio-frequency power supplies generate pulses, respectively, and a matching box controls load-side impedance of the second radio-frequency power supply, and includes: a calculation circuit that acquires power of corresponding reflected wave when the first radio-frequency power supply generates continuous pulse, and the second radio-frequency power supply generates intermittent pulse, based on different set parameters, and calculates an index value indicating the state of reflected wave; and a determination circuit that determines set parameters to be specified in the first and second radio-frequency power supplies, based on variation of each calculated index value, and derives a range to be excluded from a calculation target when the index value to be used for controlling the matcher is calculated.
Abstract:
A method includes setting a setting duty ratio of a pulse to a predefined first setting duty ratio, detecting a measured value of power of a microwave, and calculating an error of the measured value of the power with respect to the setting power level for each setting power level, calculating a correction value for the power for each setting power level on the basis of the error, and determining a first function indicating a relationship between the setting power level and the correction value by logarithmically approximating the relationship between the setting power level and the correction value, and determining the correction function indicating a relationship among the setting duty ratio, the setting power level, and the correction value by approximating the correction value defined by the first function, and the predefined correction value at a setting duty ratio of 100%, with a linear function.
Abstract:
A device includes a microwave generation unit that generates a microwave having a bandwidth, an output unit, a directional coupler, and a measurement unit. The microwave generation unit generates a microwave of which power is pulse-modulated to have a high level and a low level. The measurement unit determines a first high measured value and a first low measured value respectively indicating a high level and a low level of power of travelling waves in the output unit on the basis of parts of the travelling waves output from the directional coupler. The microwave generation unit controls high level power of the pulse-modulated microwave on the basis of and averaged first high measured value and high level setting power, and controls low level power of the pulse-modulated microwave on the basis of an averaged first low measured value and low level setting power.