公开(公告)号：US20240079403A1

公开(公告)日：2024-03-07

申请号：US18261898

申请日：2022-01-18

Applicant: Tokyo Electron Limited

Inventor： Yoshihisa MATSUBARA ,  Yoshihiro TSUTSUMI ,  Yohei YAMASHITA

IPC: H01L25/00 ,  H01L21/304 ,  H01L21/67 ,  H01L21/683 ,  H01L25/065

CPC classification number: H01L25/50 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/6835 ,  H01L25/0652 ,  H01L2221/68309 ,  H01L2221/68327 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: A method of manufacturing a substrate with chips includes the following (A) and (B):



(A) preparing a stacked substrate, the stacked substrate including: a plurality of chips; a first substrate to which the plurality of chips are temporarily bonded; and a second substrate bonded to the first substrate via the plurality of chips; and
(B) separating the plurality of chips bonded to the first substrate and the second substrate, from the first substrate, in order to bond the plurality of chips to one surface of a third substrate including a device layer.




In this method, the first substrate, from which the plurality of chips are separated, includes alignment marks that are used to ensure alignment when the first substrate and the plurality of chips are bonded together, or that are used to measure misalignment after the first substrate and the plurality of chips are bonded together.

公开(公告)号：US20240250064A1

公开(公告)日：2024-07-25

申请号：US18562502

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Yoshihisa MATSUBARA ,  Yoshihiro TSUTSUMI ,  Yohei YAMASHITA

IPC: H01L23/00 ,  B32B43/00 ,  H01L23/544

CPC classification number: H01L24/96 ,  B32B43/006 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2224/96

Abstract: The substrate processing method includes processes (A) to (D). The process (A) prepares a laminated substrate including a first substrate, a first absorption layer that absorbs laser light, a second absorption layer having an absorption coefficient with respect to the laser light higher than that of the first absorption layer, a device layer, and a second substrate in this order. The process (B) irradiates the laser light with respect to the first substrate from a side opposite to the second substrate. The process (C) irradiates the laser light transmitted through the first substrate on the first absorption layer, to form a modified layer in the first absorption layer. The process (D) separates the first substrate and the second substrate from each other using the modified layer as a starting point.

公开(公告)号：US20220068642A1

公开(公告)日：2022-03-03

申请号：US17411089

申请日：2021-08-25

Applicant: Tokyo Electron Limited

Inventor： Koji KAGAWA ,  Kenji SEKIGUCHI ,  Syuhei YONEZAWA ,  Daisuke SUZUKI ,  Yoshihiro TAKEZAWA ,  Yoshihisa MATSUBARA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/324

Abstract: A substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the method including: a holding process including holding, before executing the thermal treatment, a substrate on which the silicon film is formed; and an adhesion process including supplying, to the substrate that is held in the holding process, a solution containing metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].

公开(公告)号：US20210272809A1

公开(公告)日：2021-09-02

申请号：US17165941

申请日：2021-02-03

Applicant: Tokyo Electron Limited

Inventor： Yoshihisa MATSUBARA

IPC: H01L21/225 ,  H01L21/285 ,  H01L27/11582 ,  H01L21/67 ,  C23C16/42 ,  C23C16/455 ,  C23C16/56

Abstract: A method of reducing an impurity in a film begins by forming a metal film on a silicon film, the silicon film containing an impurity imparting electrical conductivity to silicon. The method proceeds to heat-treating the metal film to form a metal silicide region on the silicon film, and then removing the metal silicide region from the silicon film.