公开(公告)号：US20240321602A1

公开(公告)日：2024-09-26

申请号：US18733073

申请日：2024-06-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji ASAKAWA ,  Atsushi TANAKA ,  Hiroyuki OGAWA

IPC: H01L21/67

CPC classification number: H01L21/67063

Abstract: A cylindrical inner wall used in a substrate processing apparatus and surrounding a stage on which a substrate is placed, with a gap between the inner wall and an outer periphery of the stage. The inner wall includes a plurality of slits formed in a lower end of the inner wall, and a plurality of grooves formed in the inner surface of the inner wall to extend from an upper end to the lower end of the inner wall so as to communicate with the slits.

公开(公告)号：US20160027672A1

公开(公告)日：2016-01-28

申请号：US14809035

申请日：2015-07-24

Applicant: Tokyo Electron Limited

Inventor： Yuji ASAKAWA ,  Yohei MIDORIKAWA ,  Satoshi TODA ,  Hiroyuki TAKAHASHI

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67126 ,  H01L21/31116 ,  H01L21/6719 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/68792

Abstract: A substrate processing apparatus performs a predetermined process on a substrate by using a processing gas under a vacuum atmosphere. The substrate processing apparatus includes a chamber configured to accommodate the substrate and to be kept in the vacuum atmosphere; a substrate mounting table configured to mount the substrate thereon in the chamber; a gas introduction member configured to introduce a gas including the processing gas in the chamber; a partition wall member provided to be movable up and down in the chamber and configured to form a partition wall that defines a processing space in a region including the substrate above the substrate mounting table; and an elevating mechanism configured to move the partition wall member up and down.

Abstract translation: 基板处理装置在真空气氛下使用处理气体在基板上进行规定的处理。 基板处理装置包括：腔室，被配置为容纳基板并保持在真空气氛中; 基板安装台，其构造成将所述基板安装在所述室中; 气体引入构件，被配置为将包括处理气体的气体引入所述腔室; 分隔壁构件，设置成可在所述室中上下移动并且构造成在所述基板安装台上方包括所述基板的区域中形成限定处理空间的分隔壁; 以及升降机构，其构造成使所述隔壁构件上下移动。

公开(公告)号：US20210035823A1

公开(公告)日：2021-02-04

申请号：US16766967

申请日：2018-11-16

Applicant: Tokyo Electron Limited

Inventor： Yuji ASAKAWA ,  Manabu AMIKURA

IPC: H01L21/67

Abstract: A substrate processing device for processing a substrate is provided. The substrate processing device includes: a processing container configured to accommodate a substrate; a placement stage on which the substrate is mounted in the processing container; an exhauster configured to exhaust a processing gas in the processing container; and a partition wall disposed in the processing container and surrounding the placement stage, wherein, inside the partition wall, an exhaust flow path, which communicates with the exhauster, is formed to extend in a vertical direction over an entire circumference of the partition wall, and a plurality of openings, which communicates with a substrate processing space formed inside the partition wall above the placement stage and communicates with the exhaust flow path, is formed at regular intervals in an inner circumferential direction of the partition wall.

公开(公告)号：US20200312668A1

公开(公告)日：2020-10-01

申请号：US16821440

申请日：2020-03-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuji ASAKAWA ,  Nobuhiro TAKAHASHI

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  C23C16/458 ,  C23C16/44 ,  C23C16/22

Abstract: A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.