公开(公告)号：US20220093422A1

公开(公告)日：2022-03-24

申请号：US17478492

申请日：2021-09-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi SUGIMOTO ,  Hiroyuki TAKAHASHI ,  Shinya OKANO

IPC: H01L21/67 ,  H01L21/268 ,  H05B3/00 ,  H05B1/02

Abstract: A heating device for heating a substrate is provided. The heating device comprises a support portion configured to support the substrate, and a light irradiation unit configured to heat the substrate by irradiating the substrate supported by the support portion with light. A plurality of zones are set in the light irradiation unit, and each of the plurality of zones set in the light irradiation unit irradiates different portions of a surface of the substrate supporeted by the support portion with light. During the heating by the light irradiation unit, the plurality of zones take turns so that some zones of the plurality of zones are utilized.

公开(公告)号：US20180330962A1

公开(公告)日：2018-11-15

申请号：US15772546

申请日：2016-10-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiko TOMITA ,  Hiroyuki TAKAHASHI

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/687

CPC classification number: H01L21/31116 ,  H01L21/0337 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/68707

Abstract: A substrate treatment method capable of obtaining a flat processing target film. Molecules of an HF gas are adsorbed onto a corner SiO2 layer remaining in a corner portion of a groove of a wafer subjected to an oxide film removal process. An excess HF gas is discharged. An NH3 gas is supplied toward the corner SiO2 layer onto which the molecules of the HF gas are adsorbed. AFS is formed by reacting the corner SiO2 layer, the HF gas and the NH3 gas with each other. The AFS is sublimated and removed.

公开(公告)号：US20160111304A1

公开(公告)日：2016-04-21

申请号：US14886325

申请日：2015-10-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKAHASHI ,  Kazunori KAZAMA ,  Noriyuki IWABUCHI ,  Satoshi TODA ,  Tetsuro TAKAHASHI

IPC: H01L21/67 ,  H01L21/3065

Abstract: There is provided a substrate processing apparatus of performing a predetermined substrate process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts each configured to perform the substrate process on each of the plurality of target substrates; a gas supply mechanism configured to supply a processing gas to each of the plurality of processing parts; a single exhaust mechanism configured to exhaust the processing gas within the plurality of processing parts; and a control part configured to control the single exhaust mechanism to collectively exhaust the processing gas within the plurality of processing parts, and control the gas supply mechanism to separately supply the processing gas into each of the plurality of processing parts such that a difference between internal pressures of the plurality of processing parts is prevented.

Abstract translation: 提供了一种在真空气氛下对多个目标基板执行预定的基板工艺的基板处理装置，包括：多个处理部件，每个处理部件被配置为对多个目标基板中的每一个进行基板处理; 气体供给机构，其构造成将处理气体供给到所述多个处理部中的每一个; 单个排气机构，其构造成排出所述多个处理部件内的处理气体; 以及控制部，被配置为控制所述单个排气机构，以共同排出所述多个处理部内的处理气体，并且控制所述气体供给机构，以将所述处理气体分别供给到所述多个处理部中的每一个，使得内部 防止了多个处理部件的压力。

公开(公告)号：US20160079081A1

公开(公告)日：2016-03-17

申请号：US14851091

申请日：2015-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Kenshirou ASAHI ,  Hiroyuki TAKAHASHI ,  Kimihiko DEMICHI

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/30604 ,  H01L21/30621 ,  H01L21/311 ,  H01L21/32135

Abstract: There is provided an etching method, including: disposing a target substrate within a chamber, the target substrate having a first silicon oxide film formed on a surface of the target substrate and a second silicon oxide film formed adjacent to the first silicon oxide film, the first silicon oxide film being formed by an atomic layer deposition method and the second silicon oxide film being formed by a method other than the atomic layer deposition method; and selectively etching the first silicon oxide film with respect to the second silicon oxide film by supplying one selected from the group consisting of HF gas and alcohol gas; HF gas and water vapor; HF gas, F2 gas, and alcohol gas; HF gas, F2 gas, and water vapor, into the chamber.

Abstract translation: 提供了一种蚀刻方法，包括：将目标衬底设置在腔室内，目标衬底具有形成在目标衬底的表面上的第一氧化硅膜和与第一氧化硅膜相邻形成的第二氧化硅膜， 第一氧化硅膜通过原子层沉积法形成，第二氧化硅膜通过除原子层沉积法之外的方法形成; 并通过供给选自HF气体和醇气体的一种来选择性地蚀刻相对于第二氧化硅膜的第一氧化硅膜; HF气体和水蒸汽; HF气体，F2气体和醇气体; HF气体，F2气体和水蒸气进入腔室。

公开(公告)号：US20160020115A1

公开(公告)日：2016-01-21

申请号：US14795363

申请日：2015-07-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kimihiko DEMICHI ,  Kenshirou ASAHI ,  Hiroyuki TAKAHASHI

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/0206

Abstract: An etching method includes disposing a target substrate within a chamber. The target substrate has a first silicon oxide film formed on a surface of the target substrate by a chemical vapor deposition method or an atomic layer deposition method, a second silicon oxide film that includes a thermally-oxidized film and a silicon nitride film. The second silicon oxide film and the silicon nitride are formed adjacent to the first silicon oxide film. The etching method further includes supplying an HF gas and an alcohol gas or water vapor into the chamber to selectively etch the first silicon oxide film with respect to the second silicon oxide film and the silicon nitride film.

Abstract translation: 蚀刻方法包括将目标衬底设置在腔室内。 目标衬底具有通过化学气相沉积法或原子层沉积法形成在目标衬底的表面上的第一氧化硅膜，包括热氧化膜和氮化硅膜的第二氧化硅膜。 第二氧化硅膜和氮化硅与第一氧化硅膜相邻地形成。 蚀刻方法还包括将HF气体和醇气体或水蒸汽供应到室中以相对于第二氧化硅膜和氮化硅膜选择性地蚀刻第一氧化硅膜。

公开(公告)号：US20220288796A1

公开(公告)日：2022-09-15

申请号：US17761361

申请日：2020-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiji ISHIBASHI ,  Hayato ITOMI ,  Hiroyuki TAKAHASHI

IPC: B25J15/06 ,  B25J21/00 ,  B25J9/16 ,  B25J11/00

Abstract: A vacuum transfer device, which is arranged between a process chamber and a load lock chamber and transfers a substrate between the process chamber and the load lock chamber, includes a container, a transfer device, an exhaust device, a dew-point meter, and a control device. The container is connected to each of the process chamber and the load lock chamber via a gate valve. The transfer device is provided inside the container and transfers the substrate between the process chamber and the load lock chamber. The exhaust device exhausts a gas in the container. The dew-point meter measures a dew-point temperature of the gas in the container. The control device determines whether a process is ready to be executed, based on the dew-point temperature measured by the dew-point meter, and when the process is ready to be executed, notifies that fact to a user of the vacuum transfer device.

公开(公告)号：US20210398830A1

公开(公告)日：2021-12-23

申请号：US17347316

申请日：2021-06-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi SUGIMOTO ,  Hiroyuki TAKAHASHI ,  Shinya OKANO

IPC: H01L21/67 ,  H01L21/324

Abstract: A heating device for heating a substrate before the substrate is transferred to a processing device is provided. The heating device includes a support unit configured to support the substrate, and a heating unit including light emitting elements for emitting the light to individually heat divided regions of the substrate in plan view, the substrate being supported by the support unit. Among the light emitting elements, light outputs of light emitting elements that correspond to regions of the substrate in contact with a substrate holding portion of a transfer mechanism are higher than light outputs of light emitting elements that correspond to other regions of the substrate, the transfer mechanism being disposed outside the heating device to hold and transfer the substrate between the heating device and the processing device.

公开(公告)号：US20160236244A1

公开(公告)日：2016-08-18

申请号：US15044918

申请日：2016-02-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKAHASHI ,  Tomoaki OGIWARA ,  Takuya ABE ,  Masahiko TOMITA ,  Jiro KATSUKI

IPC: B08B5/00 ,  H01L21/02 ,  B08B7/00 ,  H01L21/67

CPC classification number: H01L21/0206 ,  H01L21/31116

Abstract: There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.

Abstract translation: 提供了用于去除在基板的表面上形成的氧化膜的基板处理方法。 该方法包括：（a）通过将含卤元素的气体和碱性气体供给到容纳在处理室中的基板，将氧化膜转化为反应副产物; 和（b）升华反应副产物，通过停止将含卤素元素的气体供应到处理室中并将惰性气体供应到处理室中，从反应副产物中除去反应副产物。 步骤（a）和（b）重复多次。

公开(公告)号：US20240391115A1

公开(公告)日：2024-11-28

申请号：US18792259

申请日：2024-08-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiji ISHIBASHI ,  Hayato ITOMI ,  Hiroyuki TAKAHASHI

IPC: B25J15/06 ,  B25J9/16 ,  B25J11/00 ,  B25J21/00

Abstract: A vacuum transfer device, which is arranged between a process chamber and a load lock chamber and transfers a substrate between the process chamber and the load lock chamber, includes a container, a transfer device, an exhaust device, a dew-point meter, and a control device. The container is connected to each of the process chamber and the load lock chamber via a gate valve. The transfer device is provided inside the container and transfers the substrate between the process chamber and the load lock chamber. The exhaust device exhausts a gas in the container. The dew-point meter measures a dew-point temperature of the gas in the container. The control device determines whether a process is ready to be executed, based on the dew-point temperature measured by the dew-point meter, and when the process is ready to be executed, notifies that fact to a user of the vacuum transfer device.

公开(公告)号：US20190181015A1

公开(公告)日：2019-06-13

申请号：US16275674

申请日：2019-02-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoaki OGIWARA ,  Hiroyuki TAKAHASHI ,  Takuya ABE ,  Masahiko TOMITA ,  Shinya IWASHITA

IPC: H01L21/311 ,  H01L21/3105 ,  H01L21/67

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.