公开(公告)号：US20210124341A1

公开(公告)日：2021-04-29

申请号：US17075800

申请日：2020-10-21

Applicant: Tokyo Electron Limited

Inventor： Yuka NAKASATO ,  Masashi TAKAHASHI ,  Miki OUCHI ,  Tomohiro SAITO

IPC: G05B23/02

Abstract: A failure detection system detects a failure of a sensor that detects a state of a semiconductor manufacturing apparatus. The failure detection system includes a generation unit configured to generate times-series data of information on a detection value of the sensor during a determination period, a calculation unit configured to calculate a regression line of the times-series data, and a failure determination unit configured to determine whether the sensor has failed based on a slope of the regression line.

公开(公告)号：US20190136994A1

公开(公告)日：2019-05-09

申请号：US16181467

申请日：2018-11-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuka NAKASATO ,  Manabu HONMA

IPC: F16K17/18 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458

Abstract: A relief valve includes a first valve body having an annular shape including a peripheral edge portion, which is pressed against a hole edge portion of the communication hole, and an opening in a central portion of the annular shape; a second valve body pressed against a hole edge portion of the opening of the first valve body so as to close the opening; a first spring including a compression spring or a tension spring for pressing the first valve body against the hole edge portion of the communication hole; and a second spring including a compression spring or a tension spring for pressing the second valve body against the hole edge portion of the opening, wherein the first region and the second region communicate with each other.

公开(公告)号：US20250014925A1

公开(公告)日：2025-01-09

申请号：US18759466

申请日：2024-06-28

Applicant: Tokyo Electron Limited

Inventor： Yuka NAKASATO ,  Masahiro YANAGISAWA ,  Huizhen BU

IPC: H01L21/67 ,  G01M99/00

Abstract: An information processing apparatus includes an acquisition unit that acquires a plurality of sensor values output from a plurality of sensors installed in a semiconductor manufacturing apparatus while a process is running; an inference unit that infers an abnormality degree of the process from the acquired sensor values, using an abnormality detection model that has learned a correspondence relationship between the sensor values and the abnormality degree of the process using learning data; an abnormality detection unit that detects an abnormality occurring in the process based on the inferred abnormality degree of the process; and an abnormality factor search unit that searches for a univariate abnormality and a correlation abnormality that are candidates of abnormality factors occurring in the process, using abnormality factor search methods; and an abnormality determination result output unit that outputs the detected abnormality and the searched univariate abnormality and correlation abnormality, as an abnormality determination result.

公开(公告)号：US20180363134A1

公开(公告)日：2018-12-20

申请号：US16009326

申请日：2018-06-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu HONMA ,  Yuka NAKASATO ,  Kohei DOI

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/511 ,  C23C16/52

Abstract: A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.

公开(公告)号：US20220018790A1

公开(公告)日：2022-01-20

申请号：US17372834

申请日：2021-07-12

Applicant: Tokyo Electron Limited

Inventor： Yuka NAKASATO

IPC: G01N21/95 ,  G01N21/88 ,  G01N21/84 ,  H01L21/66 ,  G06N20/00 ,  G06T7/00

Abstract: An abnormality detecting method includes: generating substrate information that represents a relationship between an in-plane position of a substrate processed in a semiconductor manufacturing apparatus and a film characteristic; and determining whether the film characteristic of the processed substrate is abnormal, based on the substrate information generated in the generating, and association information in which substrate information and abnormality factors are associated with each other.

公开(公告)号：US20210407835A1

公开(公告)日：2021-12-30

申请号：US17354158

申请日：2021-06-22

Applicant: Tokyo Electron Limited

Inventor： Yuka NAKASATO

IPC: H01L21/67

Abstract: An abnormality detecting apparatus detects an abnormality of a semiconductor manufacturing apparatus, and includes: a data generator configured to generate correlation data based on a value of a first monitoring target and a value of a second monitoring target that are correlated with each other; a calculator configured to calculate a slop of a regression line of the correlation data based on the correlation data; and an abnormality determination device configured to determine an abnormality of the semiconductor manufacturing apparatus based on the slope of the regression line.

公开(公告)号：US20190136377A1

公开(公告)日：2019-05-09

申请号：US16171522

申请日：2018-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu HONMA ,  Yuka NAKASATO

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02

Abstract: An apparatus for forming a thin film by repeating, plural times, a cycle including supplying and adsorbing a precursor gas onto a substrate and generating a reaction product by allowing the precursor gas on the substrate to react with a reaction gas, which includes: a main precursor gas supply part for supplying the precursor gas; a reaction gas supply part for supplying the reaction gas; an adjustment-purpose precursor gas supply part for supplying an adjustment-purpose precursor gas to adjust an in-plane film thickness distribution of the thin film; and a controller for outputting a control signal to execute a step of forming the thin film using the main precursor gas supply part and the reaction gas supply part, and subsequently a step of supplying the adjustment-purpose precursor gas from the adjustment-purpose precursor gas supply part to compensate for a film thickness of a portion having a relatively thin film thickness.