公开(公告)号：US06258607B1

公开(公告)日：2001-07-10

申请号：US08082373

申请日：1993-06-28

申请人： Tomo Saito ,  Mikio Ikeda

发明人： Tomo Saito ,  Mikio Ikeda

IPC分类号： G01N33553

CPC分类号： G01N33/54333 ,  G01N33/5304 ,  G01N35/0098 ,  Y10S436/806

摘要： An indirect agglutination immunoassay includes the steps of providing, in a container, an immunoassay system comprising a test sample containing a desired analyte, and a reagent composed of magnetic particles or magnetic-material containing particles containing iron therein, wherein the magnetic particles or magnetic-material containing particles have been sensitized to allow specific binding to the desired analyte, and have a particle size in the range of 1 to 5 &mgr;m, with the content of the iron being in the range of 8 to 20 wt. %, precipitating the magnetic particles or magnetic-material containing particles by the application of magnetic force, allowing the container to stand at an inclination, and detecting the presence or absence of an immune reaction from the absence or presence of slippage observed of the precipitated magnetic particles or magnetic-material containing particles on the bottom of the container. An apparatus for conducting this indirect agglutination immunoassay is composed of the above container, a magnetic sedimentation device for magnetically precipitating the components containing the magnetic particles at the bottom of the container, and an inclination device for allowing the container to stand at an inclination after removal of the magnetic sedimentation device.

摘要翻译： 间接凝集免疫测定法包括以下步骤：在容器中提供包含含有所需分析物的测试样品的免疫测定系统和由含有铁的粒子的磁性粒子或磁性材料构成的试剂，其中，磁性粒子或磁性粒子， 含有颗粒的材料已经被致敏以允许与期望的分析物的特异性结合，并且具有1至5μm的范围内的粒度，其中铁的含量在8至20重量％的范围内。 ％，通过施加磁力使磁性颗粒或含有磁性材料的颗粒沉淀，允许容器倾斜放置，并且检测是否存在免受沉淀的磁体的滑动的存在或不存在 在容器底部含有颗粒的颗粒或磁性材料。 用于进行这种间接凝集免疫测定的装置由上述容器构成，用于磁性沉淀容器底部包含磁性颗粒的组分的磁性沉降装置和用于允许容器在移除后以倾斜姿势静置的倾斜装置 的磁性沉降装置。

公开(公告)号：US5269957A

公开(公告)日：1993-12-14

申请号：US836399

申请日：1992-02-18

申请人： Mikio Ikeda ,  Jun Kataoka

发明人： Mikio Ikeda ,  Jun Kataoka

IPC分类号： C11D10/02 ,  C11D1/72 ,  C11D3/20 ,  C23G1/08 ,  C02F5/10 ,  C09K3/00 ,  C23F11/10

CPC分类号： C11D3/2086 ,  C11D1/72 ,  C23G1/088

摘要： A rust removing agent for a stainless steel surface of an aqueous solution of phosphoric acid, a polyhydroxymonocarboxylic acid or a salt thereof and a surfactant.

摘要翻译： 磷酸，多羟基单羧酸或其盐和表面活性剂的水溶液的不锈钢表面的防锈剂。

公开(公告)号：US5736438A

公开(公告)日：1998-04-07

申请号：US483411

申请日：1995-06-07

申请人： Hisayuki Nishimura ,  Kazuyuki Sugahara ,  Shigenobu Maeda ,  Takashi Ipposhi ,  Yasuo Inoue ,  Toshiaki Iwamatsu ,  Mikio Ikeda ,  Tatsuya Kunikiyo ,  Junji Tateishi ,  Tadaharu Minato

发明人： Hisayuki Nishimura ,  Kazuyuki Sugahara ,  Shigenobu Maeda ,  Takashi Ipposhi ,  Yasuo Inoue ,  Toshiaki Iwamatsu ,  Mikio Ikeda ,  Tatsuya Kunikiyo ,  Junji Tateishi ,  Tadaharu Minato

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/8244 ,  H01L27/11 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L27/11 ,  H01L27/1108 ,  H01L29/78654 ,  H01L27/1281 ,  Y10S257/903

摘要： In a miniaturized complete CMOS SRAM of a TFT load type, a field effect thin-film transistor (TFT) can achieve stable reading and writing operation of a memory cell and can reduce power consumption thereof. The field effect thin-film transistor formed on an insulator includes an active layer and a gate electrode. The gate electrode is formed on a channel region of the active layer with a gate insulating film therebetween. The active layer is formed of a channel region and source/drain regions. The channel region is formed of a monocrystal silicon layer and does not includes a grain boundary. The source/drain regions is formed of a polysilicon layer. The channel region has a density of crystal defects of less than 10.sup.9 pieces/cm.sup.2. The thin film transistor shows an ON current of 0.25 .mu.A/.mu.m per channel width of 1 .mu.m and an OFF current of 15 fA/.mu.m. The thin-film transistor can be applied to a p-channel MOS transistor serving as a load transistor in a memory cell of a CMOS type SRAM.

摘要翻译： 在TFT负载型的小型化的完全CMOS SRAM中，场效应薄膜晶体管（TFT）能够实现对存储单元的稳定的读/写操作并且可以降低其功耗。 形成在绝缘体上的场效应薄膜晶体管包括有源层和栅电极。 栅电极形成在有源层的沟道区上，其间具有栅极绝缘膜。 有源层由沟道区和源极/漏极区形成。 沟道区由单晶硅层形成，不包含晶界。 源/漏区由多晶硅层形成。 沟道区域的晶体缺陷密度小于109个/ cm 2。 薄膜晶体管的通道宽度为1μm，导通电流为0.25μA/μm，OFF电流为15fA /μm。 薄膜晶体管可以被施加到用作CMOS型SRAM的存储单元中的负载晶体管的p沟道MOS晶体管。

公开(公告)号：US3957420A

公开(公告)日：1976-05-18

申请号：US533305

申请日：1974-12-16

申请人： Minoru Asai ,  Takehiro Takamoto ,  Mikio Ikeda ,  Eiji Irahara

发明人： Minoru Asai ,  Takehiro Takamoto ,  Mikio Ikeda ,  Eiji Irahara

IPC分类号： F23C6/04 ,  F23C7/02 ,  F23C5/20

CPC分类号： F23C6/045 ,  F23C7/02

摘要： The invention discloses a low NO.sub.x emission burner for use with an apparatus in which the material or materials are heated by the heat radiated from the radiation surface which is heated by the combustion by the burners. The secondary air injection ports or outlets are so arranged as to inject the secondary air upon the radiation surface to control the combustion, thereby reducing the release of NO.sub.x without producing CO and soot.

摘要翻译： 本发明公开了一种低NOx排放燃烧器，用于与通过由燃烧器的燃烧加热的辐射表面辐射的热量来加热材料或材料的装置。 二次空气喷射口或出口布置成将二次空气喷射到辐射表面上以控制燃烧，从而减少NOx的释放而不产生CO和烟灰。

公开(公告)号：US5514880A

公开(公告)日：1996-05-07

申请号：US142564

申请日：1993-10-28

申请人： Hisayuki Nishimura ,  Kazuyuki Sugahara ,  Shigenobu Maeda ,  Takashi Ipposhi ,  Yasuo Inoue ,  Toshiaki Iwamatsu ,  Mikio Ikeda ,  Tatsuya Kunikiyo ,  Junji Tateishi ,  Tadaharu Minato

发明人： Hisayuki Nishimura ,  Kazuyuki Sugahara ,  Shigenobu Maeda ,  Takashi Ipposhi ,  Yasuo Inoue ,  Toshiaki Iwamatsu ,  Mikio Ikeda ,  Tatsuya Kunikiyo ,  Junji Tateishi ,  Tadaharu Minato

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/8244 ,  H01L27/11 ,  H01L29/78 ,  H01L29/786 ,  H01L29/10 ,  H01L29/06

CPC分类号： H01L27/11 ,  H01L27/1108 ,  H01L29/78654 ,  H01L27/1281 ,  Y10S257/903

摘要： In a miniaturized complete CMOS SRAM of a TFT load type, a field effect thin-film transistor (TFT) can achieve stable reading and writing operation of a memory cell and can reduce power consumption thereof. The field effect thin-film transistor formed on an insulator includes an active layer and a gate electrode. The gate electrode is formed on a channel region of the active layer with a gate insulating film therebetween. The active layer is formed of a channel region and source/drain regions. The channel region is formed of a monocrystal silicon layer and does not includes a grain boundary. The source/drain regions is formed of a polysilicon layer. The channel region has a density of crystal defects of less than 10.sup.9 pieces/cm.sup.2. The thin film transistor shows an ON current of 0.25 .mu.A/.mu.m per channel width of 1 .mu.m and an OFF current of 15 fA/.mu.m. The thin-film transistor can be applied to a p-channel MOS transistor serving as a load transistor in a memory cell of a CMOS type SRAM.

摘要翻译： 在TFT负载型的小型化的完全CMOS SRAM中，场效应薄膜晶体管（TFT）能够实现对存储单元的稳定的读/写操作并且可以降低其功耗。 形成在绝缘体上的场效应薄膜晶体管包括有源层和栅电极。 栅电极形成在有源层的沟道区上，其间具有栅极绝缘膜。 有源层由沟道区和源极/漏极区形成。 沟道区由单晶硅层形成，不包含晶界。 源/漏区由多晶硅层形成。 沟道区域的晶体缺陷密度小于109个/ cm 2。 薄膜晶体管的通道宽度为1μm，导通电流为0.25μA/μm，OFF电流为15fA /μm。 薄膜晶体管可以被施加到用作CMOS型SRAM的存储单元中的负载晶体管的p沟道MOS晶体管。

公开(公告)号：US5293327A

公开(公告)日：1994-03-08

申请号：US718686

申请日：1991-06-21

申请人： Mikio Ikeda ,  Norihiko Kotani

发明人： Mikio Ikeda ,  Norihiko Kotani

IPC分类号： G06F11/25 ,  G06F17/50 ,  G06F15/60 ,  G06F15/20

CPC分类号： G06F17/5022

摘要： A method of logic simulation includes the steps of reading delay time of a logic element itself calculated in advance, converting output logic value of the logic element to a voltage value, forming a circuit equation based on connection information of an output impedance circuit of the logic element, calculating a voltage value at an arbitrary node of the output impedance circuit by solving the circuit equation, and converting a voltage value of an input node of a logic element of the succeeding stage to a logic value.

摘要翻译： 一种逻辑仿真方法包括以下步骤：读取预先计算的逻辑元件本身的延迟时间，将逻辑元件的输出逻辑值转换为电压值，根据逻辑元件的输出阻抗电路的连接信息形成电路方程 通过求解电路方程来计算输出阻抗电路的任意节点处的电压值，并将后级逻辑元件的输入节点的电压值转换为逻辑值。

公开(公告)号：US5144008A

公开(公告)日：1992-09-01

申请号：US603022

申请日：1990-10-26

申请人： Mikio Ikeda ,  Shingo Morishita ,  Ichiro Matsuda

发明人： Mikio Ikeda ,  Shingo Morishita ,  Ichiro Matsuda

IPC分类号： A61K39/00 ,  C12N11/02 ,  G01N33/544 ,  G01N33/545

CPC分类号： C12N11/02 ,  G01N33/544 ,  G03C2001/0471

摘要： An artificial carrier for immobilization of biological proteins, which are composed of particles comprising gelatin, an alkali metal metaphosphate and an anionic high-molecular electrolyte, said particles being water-insolubilized by a treatment with an aldehyde.

公开(公告)号：US4582622A

公开(公告)日：1986-04-15

申请号：US660462

申请日：1984-10-12

申请人： Mikio Ikeda ,  Shiro Sakamoto ,  Kazumasa Suzuki

发明人： Mikio Ikeda ,  Shiro Sakamoto ,  Kazumasa Suzuki

IPC分类号： B03C1/01 ,  G01N33/543 ,  H01F1/00 ,  C04B35/64 ,  H01F1/28

CPC分类号： G01N33/5434 ,  B03C1/01 ,  G01N2446/20 ,  G01N2446/30 ,  G03C2001/0471 ,  Y10S530/813

摘要： A magnetic particulate comprising gelatin, water-soluble polysaccharide, sodium polymetaphosphate and ferromagnetic substance, which is used as a carrier for immobilization of biological proteins such as antigens, antibodies or enzymes, and a process of producing the magnetic particulate.

摘要翻译： 包含明胶，水溶性多糖，聚偏磷酸钠和铁磁性物质的磁性颗粒，用作固定生物蛋白如抗原，抗体或酶的载体，以及制备磁性颗粒的方法。

公开(公告)号：US4416813A

公开(公告)日：1983-11-22

申请号：US359249

申请日：1982-03-18

申请人： Mikio Ikeda ,  Takayuki Tomizawa

发明人： Mikio Ikeda ,  Takayuki Tomizawa

IPC分类号： C12N11/02 ,  G01N33/545 ,  C09H7/00 ,  C12N11/10 ,  G01N33/54

CPC分类号： C12N11/02 ,  G01N33/545 ,  G03C2001/0471 ,  Y10S435/967 ,  Y10S524/90 ,  Y10S530/806 ,  Y10S530/813 ,  Y10S530/814

摘要： A novel artificial carrier is disclosed which is prepared from gelatin, a water-soluble polysaccharide, a sodium metaphosphate and an aldehyde. The carrier can be used to immobilize antibodies, antigens or enzymes. Immobilized antigens and antibodies can be used as a diagnostic reagent in assays involving antigen-antibody reactions.

摘要翻译： 公开了由明胶，水溶性多糖，偏磷酸钠和醛制备的新型人造载体。 载体可用于固定抗体，抗原或酶。 固定化的抗原和抗体可用作涉及抗原 - 抗体反应的测定中的诊断试剂。