公开(公告)号：US08143618B2

公开(公告)日：2012-03-27

申请号：US12371965

申请日：2009-02-17

申请人： Hiroshi Kotani ,  Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio ,  Akio Ogawa ,  Tomofumi Yamamuro

发明人： Hiroshi Kotani ,  Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio ,  Akio Ogawa ,  Tomofumi Yamamuro

IPC分类号： H01L29/10 ,  H01L21/00

CPC分类号： H01L33/28 ,  H01L24/45 ,  H01L33/44 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01322 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

摘要翻译： 一种ZnO基半导体器件包括：层叠结构，其包括第一半导体层，其包含第一导电类型的ZnO基半导体和包含与第一导电类型相反的第二导电类型的ZnO基半导体的第二半导体层，形成在第一半导体 并与第一半导体层一起形成pn结; 以及包含Zn，Si和O化合物的Zn-Si-O层，并覆盖暴露层压结构的pn结的表面。

公开(公告)号：US20090236598A1

公开(公告)日：2009-09-24

申请号：US12428567

申请日：2009-04-23

申请人： Akio OGAWA ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

发明人： Akio OGAWA ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/285 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L33/16 ,  Y10S438/914 ,  Y10S438/918

摘要： A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.

摘要翻译： 提供了可以获得长于蓝色（例如420nm）的波长的发光并具有新颖结构的ZnO层。 通过将S掺杂到ZnO层中可以获得比ZnO的带隙窄0.6eV或更大的过渡能。

公开(公告)号：US20110084275A1

公开(公告)日：2011-04-14

申请号：US12969304

申请日：2010-12-15

申请人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

发明人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

IPC分类号： H01L33/28

CPC分类号： H01L33/285

摘要： A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

摘要翻译： 含ZnO的半导体层含有添加到ZnO中的Se，并且具有紫外光的发射峰值波长和视觉光的发射峰值波长。 通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

公开(公告)号：US20090008660A1

公开(公告)日：2009-01-08

申请号：US12165794

申请日：2008-07-01

申请人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

发明人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

IPC分类号： H01L33/00

CPC分类号： H01L33/285

摘要： A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

摘要翻译： 含ZnO的半导体层含有添加到ZnO中的Se或S，具有紫外光的发射峰值波长和视觉光的发射峰值波长。 通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

公开(公告)号：US08436351B2

公开(公告)日：2013-05-07

申请号：US12969304

申请日：2010-12-15

申请人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

发明人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

IPC分类号： H01L33/28

CPC分类号： H01L33/285

摘要： A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

摘要翻译： 含ZnO的半导体层含有添加到ZnO中的Se，并且具有紫外光的发射峰值波长和视觉光的发射峰值波长。 通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

公开(公告)号：US07968905B2

公开(公告)日：2011-06-28

申请号：US12165794

申请日：2008-07-01

申请人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

发明人： Tomofumi Yamamuro ,  Michihiro Sano ,  Naochika Horio ,  Hiroyuki Kato ,  Akio Ogawa ,  Hiroshi Kotani

IPC分类号： H01L29/20 ,  H01L33/00

CPC分类号： H01L33/285

摘要： A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

摘要翻译： 含ZnO的半导体层含有添加到ZnO中的Se或S，具有紫外光的发射峰值波长和视觉光的发射峰值波长。 通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

公开(公告)号：US07943927B2

公开(公告)日：2011-05-17

申请号：US12501764

申请日：2009-07-13

申请人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

发明人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

IPC分类号： H01L33/00

CPC分类号： H01L21/02433 ,  H01L21/0237 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02609 ,  H01L21/02631 ,  H01L33/28

摘要： A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.

摘要翻译： ZnO基半导体发光器件包括：含有ZnO1-x1Sx1的第一半导体层; 形成在第一半导体层之上并含有ZnO1-x2Sx2的第二半导体层; 以及第三半导体层，其形成在所述第二半导体层的上方并且包含ZnO1-x3Sx3，其中所述第一半导体层的S组成x1，所述第二半导体层的S组成x2和所述第三半导体层的S组成x3被选择 导带下端的第二半导体层的能量变得低于导带下端的第一和第三半导体层的能量的两者的能量，并且第二半导体层在上端的能量 的价带变得高于在价带上端的第一和第三半导体层的能量的两个能量。

公开(公告)号：US07718468B2

公开(公告)日：2010-05-18

申请号：US12194791

申请日：2008-08-20

申请人： Tomofumi Yamamuro ,  Michihiro Sano ,  Hiroyuki Kato ,  Akio Ogawa

发明人： Tomofumi Yamamuro ,  Michihiro Sano ,  Hiroyuki Kato ,  Akio Ogawa

IPC分类号： H01L21/00

CPC分类号： H01L21/0237 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02661

摘要： A method includes (a) preparing a substrate, and (b) growing a ZnO-containing compound semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as a surfactant.

摘要翻译： 一种方法包括（a）制备衬底，以及（b）通过同时至少供给作为源气体的Zn和O以及S作为表面活性剂，生长在衬底上方的含ZnO化合物半导体层。

公开(公告)号：US20090294758A1

公开(公告)日：2009-12-03

申请号：US12540772

申请日：2009-08-13

申请人： Akio OGAWA ,  Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio ,  Hiroshi Kotani ,  Tomofumi Yamamuro

发明人： Akio OGAWA ,  Michihiro Sano ,  Hiroyuki Kato ,  Naochika Horio ,  Hiroshi Kotani ,  Tomofumi Yamamuro

IPC分类号： H01L33/00 ,  H01L29/22 ,  H01L21/36

CPC分类号： H01S5/347 ,  B82Y20/00 ,  H01L33/285

摘要： A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.

摘要翻译： 掺有Se的含ZnO半导体层在视觉上具有发光峰值波长，并且具有与ZnO的带隙相当的带隙。

公开(公告)号：US20090272972A1

公开(公告)日：2009-11-05

申请号：US12501764

申请日：2009-07-13

申请人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

发明人： Akio Ogawa ,  Michihiro Sano ,  Hiroyuki Kato ,  Hiroshi Kotani ,  Tomofumi Yamamuro

IPC分类号： H01L33/00

CPC分类号： H01L21/02433 ,  H01L21/0237 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02609 ,  H01L21/02631 ,  H01L33/28

摘要： A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.

摘要翻译： ZnO基半导体发光器件包括：含有ZnO1-x1Sx1的第一半导体层; 形成在第一半导体层之上并含有ZnO1-x2Sx2的第二半导体层; 以及第三半导体层，其形成在所述第二半导体层的上方并且包含ZnO1-x3Sx3，其中所述第一半导体层的S组成x1，所述第二半导体层的S组成x2和所述第三半导体层的S组成x3被选择 导带下端的第二半导体层的能量变得低于导带下端的第一和第三半导体层的能量的两者的能量，并且第二半导体层在上端的能量 的价带变得高于在价带上端的第一和第三半导体层的能量的两个能量。