公开(公告)号：US20060028775A1

公开(公告)日：2006-02-09

申请号：US11194090

申请日：2005-07-28

申请人： Tomohiro Yamashita ,  Naoya Hasegawa ,  Eiji Umetsu ,  Ryo Nakabayashi ,  Akira Takahashi

发明人： Tomohiro Yamashita ,  Naoya Hasegawa ,  Eiji Umetsu ,  Ryo Nakabayashi ,  Akira Takahashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3945

摘要： A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness of a second free magnetic layer is increased so as to be greater than that of a first free magnetic layer and offset the torque applied to the second free magnetic layer with that applied to the first free magnetic layer when the sensing current magnetic field occurs. Thus, change in the magnetization direction of the free magnetic layer before and after a sensing current is applied in the magnetic detecting element can be suppressed. The orthogonal state between the free magnetic layer and the pinned magnetic layer is maintained even when a sensing current in the same direction as that before the occurrence is applied in the magnetic detecting element wherein pin inversion occurred, and the output asymmetry is maintained suitably.

摘要翻译： 即使磁性层的磁化方向为180°，也能够抑制输出不对称的变化的磁性检测元件。 第二自由磁性层的磁膜厚度增加到大于第一自由磁性层的磁膜厚度，并且当施加到第一自由磁性层时，施加到第二自由磁性层的扭矩偏移到第一自由磁性层 发生电流磁场。 因此，可以抑制在磁检测元件中施加感测电流之前和之后的自由磁性层的磁化方向的变化。 即使当在发生针反转的磁检测元件中施加与发生前相同的方向的感测电流时，也保持自由磁性层和被钉扎磁性层之间的正交状态，并且适当地保持输出不对称性。

公开(公告)号：US07397639B2

公开(公告)日：2008-07-08

申请号：US11194090

申请日：2005-07-28

申请人： Tomohiro Yamashita ,  Naoya Hasegawa ,  Eiji Umetsu ,  Ryo Nakabayashi ,  Akira Takahashi

发明人： Tomohiro Yamashita ,  Naoya Hasegawa ,  Eiji Umetsu ,  Ryo Nakabayashi ,  Akira Takahashi

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3945

摘要： A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness of a second free magnetic layer is increased so as to be greater than that of a first free magnetic layer and offset the torque applied to the second free magnetic layer with that applied to the first free magnetic layer when the sensing current magnetic field occurs. Thus, change in the magnetization direction of the free magnetic layer before and after a sensing current is applied in the magnetic detecting element can be suppressed. The orthogonal state between the free magnetic layer and the pinned magnetic layer is maintained even when a sensing current in the same direction as that before the occurrence is applied in the magnetic detecting element wherein pin inversion occurred, and the output asymmetry is maintained suitably.

摘要翻译： 即使磁性层的磁化方向为180°，也能够抑制输出不对称的变化的磁性检测元件。 第二自由磁性层的磁膜厚度增加到大于第一自由磁性层的磁膜厚度，并且当施加到第一自由磁性层时，施加到第二自由磁性层上的扭矩偏移到第一自由磁性层 发生电流磁场。 因此，可以抑制在磁检测元件中施加感测电流之前和之后的自由磁性层的磁化方向的变化。 即使当在发生针反转的磁检测元件中施加与发生前相同的方向的感测电流时，也保持自由磁性层和被钉扎磁性层之间的正交状态，并且适当地保持输出不对称性。

公开(公告)号：US08009391B2

公开(公告)日：2011-08-30

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US20080074805A1

公开(公告)日：2008-03-27

申请号：US11857921

申请日：2007-09-19

申请人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/132 ,  H01F10/3254 ,  H01F41/302 ,  H01L43/12

摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

摘要翻译： 隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。 构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。 第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

公开(公告)号：US07969693B2

公开(公告)日：2011-06-28

申请号：US11857921

申请日：2007-09-19

申请人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/132 ,  H01F10/3254 ,  H01F41/302 ,  H01L43/12

摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

摘要翻译： 隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。 构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。 第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

公开(公告)号：US20080285180A1

公开(公告)日：2008-11-20

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，可以比以前更多地改善PW50（半幅度脉冲宽度）和SN比，而不会导致电阻变化率（ΔR/ R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US20060110625A1

公开(公告)日：2006-05-25

申请号：US11266956

申请日：2005-10-26

申请人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： H01F10/3277 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

公开(公告)号：US07567412B2

公开(公告)日：2009-07-28

申请号：US11266956

申请日：2005-10-26

申请人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Fumihito Koike ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01F10/3277 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1193

摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

摘要翻译： 磁传感元件包括具有包括与非磁性材料层接触的第一增强层，第二增强层和低矫顽力层的三层结构的自由磁性层。 第二增强层具有比第一增强层更低的磁致伸缩系数λ。 如果使用具有双层结构的这种增强层，而不是已知的单层结构，并且第二增强层具有比第一增强层更低的磁致伸缩系数λ，则可以增加磁传感元件的磁阻的变化率 而自由磁性层的磁致伸缩系数λ则没有增加。

公开(公告)号：US20060262459A1

公开(公告)日：2006-11-23

申请号：US11413217

申请日：2006-04-28

申请人： Kazumi Kamai ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Ryo Nakabayashi

发明人： Kazumi Kamai ,  Naoya Hasegawa ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Ryo Nakabayashi

IPC分类号： G11B5/33 ,  H04R31/00

CPC分类号： G11B5/3906 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/303 ,  Y10T29/49021

摘要： A magnetic detection element capable of increasing the magnetoresistance ratio (ΔR/R) and increasing the reproduction output by applying a surface modification treatment and improving the layer structure of a pinned magnetic layer, as well as a method for manufacturing the same, is provided. A surface of a non-magnetic intermediate layer formed from Ru or the like is subjected to a first treatment, in which the surface is activated by conducting a plasma treatment, and a second treatment, in which the surface is exposed to an atmosphere containing oxygen, a second pinned magnetic layer is allowed to have a two-layer structure composed of a non-magnetic material layer-side magnetic layer formed from Co and a non-magnetic intermediate layer-side magnetic layer formed from a CoFe alloy, and the film thickness ratio of the non-magnetic intermediate layer-side magnetic layer to the second pinned magnetic layer is specified to be 16% to 50%.

摘要翻译： 提供了能够通过施加表面改性处理并改善被钉扎的磁性层的层结构来提高磁阻比（DeltaR / R）并增加再现输出的磁性检测元件及其制造方法。 对由Ru等形成的非磁性中间层的表面进行第一处理，其中表面通过进行等离子体处理而被活化，第二处理是将表面暴露于含有氧的气氛 第二被钉扎磁性层被允许具有由Co形成的非磁性材料层侧磁性层和由CoFe合金形成的非磁性中间层侧磁性层构成的两层结构，并且该膜 非磁性中间层侧磁性层与第二被钉扎磁性层的厚度比规定为16〜50％。

公开(公告)号：US07969690B2

公开(公告)日：2011-06-28

申请号：US12042585

申请日：2008-03-05

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3929 ,  H01L43/08

摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.

摘要翻译： 在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。 非磁性金属子层的平均厚度为约1埃以上且约5以下。