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    Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry
    1.
    发明授权
    Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry 失效
    使用化学机械平坦化（CMP）浆料形成含铜金属互连的方法

    公开(公告)号：US06436811B1

    公开(公告)日：2002-08-20

    申请号：US09741131

    申请日：2000-12-19

    申请人： Tomoko Wake ,  Yasuaki Tsuchiya

    发明人： Tomoko Wake ,  Yasuaki Tsuchiya

    IPC分类号： H01L214763

    CPC分类号： C09G1/02 ,  H01L21/3212 ,  H01L21/7684

    摘要： This invention relates to a process for forming a metal interconnect comprising the steps of forming a concave in an insulating film formed on a substrate, forming a copper-containing metal film over the whole surface such that the concave is filled with the metal and then polishing the copper-containing metal film by chemical mechanical polishing, characterized in that the polishing step is conducted using a chemical mechanical polishing slurry comprising a polishing material, an oxidizing agent and an adhesion inhibitor preventing adhesion of a polishing product to a polishing pad, while contacting the polishing pad to a polished surface with a pressure of at least 27 kPa. This invention allows us to prevent adhesion of a polishing product to a polishing pad and to form a uniform interconnect layer with an improved throughput, even when polishing a large amount of copper-containing metal during a polishing step.

    摘要翻译： 本发明涉及一种用于形成金属互连的方法，包括以下步骤：在形成在基板上的绝缘膜中形成凹陷，在整个表面上形成含铜金属膜，使得凹入物被金属填充，然后抛光 通过化学机械抛光的含铜金属膜，其特征在于，使用包含抛光材料，氧化剂和防粘附剂的化学机械抛光浆料进行抛光步骤，防止抛光产品粘附到抛光垫上，同时接触 该抛光垫至少压力为27kPa的抛光表面。 本发明允许我们防止抛光产品与抛光垫的粘合，并且即使在抛光步骤中抛光大量含铜金属时，也能够提高生产能力，形成均匀的互连层。

    Process for forming a metal interconnect
    2.
    发明授权
    Process for forming a metal interconnect 失效
    用于形成金属互连的工艺

    公开(公告)号：US06930037B2

    公开(公告)日：2005-08-16

    申请号：US09737397

    申请日：2000-12-15

    申请人： Yasuaki Tsuchiya ,  Tomoko Wake

    发明人： Yasuaki Tsuchiya ,  Tomoko Wake

    IPC分类号： B24B37/00 ,  C09K3/00 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

    CPC分类号： H01L21/7684 ,  H01L23/53228 ,  H01L2924/0002 ,  Y10S438/959 ,  H01L2924/00

    摘要： This invention relates to a process for forming a metal interconnect comprising the steps of forming a concave in an insulating film formed on a substrate, forming a barrier metal film on the insulating film, forming an interconnect metal film over the whole surface such that the concave is filled with the metal and then polishing the surface of the substrate by chemical mechanical polishing, characterized in that the polishing step comprises a first polishing step of polishing the surface such that the interconnect metal film partially remains on the surface other than the concave and a second polishing step of polishing the surface using a polishing slurry controlling a polishing-rate ratio of the interconnect metal to the barrier metal to 1 to 3 both inclusive, until the surface of the insulating film other than the concave is substantially completely exposed. According to this invention, dishing and erosion can be prevented and a reliable damascene interconnect with a small dispersion of an interconnect resistance can be formed.

    摘要翻译： 本发明涉及一种用于形成金属互连的方法，包括以下步骤：在形成在基板上的绝缘膜中形成凹陷，在绝缘膜上形成阻挡金属膜，在整个表面上形成互连金属膜， 填充金属，然后通过化学机械抛光抛光衬底的表面，其特征在于抛光步骤包括抛光表面的第一抛光步骤，使得互连金属膜部分地保留在除了凹部以外的表面上，以及 使用将互连金属与阻挡金属的研磨速度比控制在1〜3之间的抛光浆料将表面进行研磨的第二研磨工序，直到除凹部以外的绝缘膜的表面基本上完全露出。 根据本发明，可以防止凹陷和侵蚀，并且可以形成可靠的镶嵌与互连电阻的小分散的互连。

    Chemical mechanical polishing slurry
    3.
    发明授权
    Chemical mechanical polishing slurry 有权
    化学机械抛光浆

    公开(公告)号：US06530968B2

    公开(公告)日：2003-03-11

    申请号：US09989021

    申请日：2001-11-20

    申请人： Yasuaki Tsuchiya ,  Tomoko Wake ,  Tetsuyuki Itakura ,  Shin Sakurai ,  Kenichi Aoyagi

    发明人： Yasuaki Tsuchiya ,  Tomoko Wake ,  Tetsuyuki Itakura ,  Shin Sakurai ,  Kenichi Aoyagi

    IPC分类号： C09G102

    CPC分类号： C09K3/1463 ,  C09G1/02

    摘要： This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

    摘要翻译： 本发明提供了一种化学机械抛光浆料，用于抛光形成在绝缘膜上的金属膜，该金属膜在基材上具有凹陷，其中浆料含有不具有与研磨材料表面上的电荷相反的离子基团的增稠剂至0.001重量％ 或更多且少于0.05重量％，并且具有1mPa.s至5mPa.s的浆液粘度。 抛光浆料可用于CMP以形成可靠的镶嵌电连接，其具有在较高抛光速率下具有优异电性能，即较高生产量，同时防止凹陷或侵蚀。

    Polishing process for use in method of fabricating semiconductor device
    8.
    发明授权
    Polishing process for use in method of fabricating semiconductor device 失效
    用于制造半导体器件的方法的抛光工艺

    公开(公告)号：US06443807B1

    公开(公告)日：2002-09-03

    申请号：US09702673

    申请日：2000-11-01

    申请人： Tetsuya Sakai ,  Yasuaki Tsuchiya

    发明人： Tetsuya Sakai ,  Yasuaki Tsuchiya

    IPC分类号： B24B100

    CPC分类号： B24B37/24 ,  B24D3/22 ,  H01L21/31053 ,  H01L21/3212

    摘要： First, in a primary polishing step, a substrate is brought into close contact with a first pad including abrasives and made of a hard material, and the first pad is rotated while a first solution containing no abrasive is supplied onto the first pad to polish a surface of the substrate. In the primary polishing step, since the first solution contains no abrasive and the first pad is hard, polishing is performed with high flatness and extremely less dishing and erosion. Next, in a secondary polishing step, the substrate is brought into close contact with a second pad including no abrasive and made of a soft material, and the second pad is rotated while a second solution containing abrasives is supplied onto the second pad to polish the surface of the substrate. In the secondary polishing step, since the second solution contains the abrasives and the second pad is soft, scratches produced in the primary polishing step are reduced.

    摘要翻译： 首先，在一次抛光步骤中，将衬底与包括磨料的第一衬垫紧密接触并由硬质材料制成，并且第一衬垫旋转，而不含磨料的第一溶液被供应到第一衬垫上以抛光 基板的表面。 在一次抛光步骤中，由于第一溶液不含研磨剂，并且第一填料是硬的，所以以高的平整度和极少的凹陷和侵蚀进行抛光。 接下来，在二次抛光步骤中，使衬底与不含研磨剂的第二衬垫紧密接触并由软材料制成，并且第二衬垫旋转，同时将含有磨料的第二溶液供应到第二衬垫上以抛光 基板的表面。 在二次抛光步骤中，由于第二溶液含有研磨剂，并且第二垫是柔软的，所以在一次抛光步骤中产生的划痕减小。

    Abrasive pad and polishing method
    9.
    发明授权
    Abrasive pad and polishing method 失效
    磨料垫和抛光方法

    公开(公告)号：US06428405B1

    公开(公告)日：2002-08-06

    申请号：US09716210

    申请日：2000-11-21

    申请人： Yasuaki Tsuchiya

    发明人： Yasuaki Tsuchiya

    IPC分类号： B24D1100

    CPC分类号： B24B37/26

    摘要： An abrasive pad and a polishing method advantageously applicable to wafers for the production of semiconductor devices are disclosed. The abrasive pad includes a pad body capable of spinning for polishing a wafer pressed against the pad body. A number of grooves are formed in the surface of the pad body, so that slurry can flow therein. The grooves intersect each other to form a number of projections aligning in the horizontal and vertical directions and each having a polygonal shape, as seen in a plan view. One of the projections faces each groove in the lengthwise direction of the groove. This configuration enhances uniform polishing and high speed, high pressure polishing while promoting efficient use of the slurry.

    摘要翻译： 公开了一种研磨垫和有利地用于制造半导体器件的晶片的抛光方法。 研磨垫包括能够旋转的衬垫体，用于抛光压靠衬垫本体的晶片。 在垫体的表面形成有多个凹槽，从而可以在其中流动浆料。 这些凹槽彼此相交以形成在水平和垂直方向上对齐的多个突起，并且每个具有多边形形状，如在平面图中所见。 突起中的一个面向槽的长度方向上的每个槽。 这种结构提高了均匀抛光和高速高压抛光，同时促进了浆料的有效利用。

    Semiconductor device with a copper wiring pattern
    10.
    发明授权
    Semiconductor device with a copper wiring pattern 失效
    具有铜布线图案的半导体器件

    公开(公告)号：US5959359A

    公开(公告)日：1999-09-28

    申请号：US923843

    申请日：1997-09-04

    申请人： Yasuaki Tsuchiya

    发明人： Yasuaki Tsuchiya

    IPC分类号： H01L21/285 ,  C23C14/06 ,  H01L21/203 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43

    CPC分类号： H01L21/76849 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/12044

    摘要： In forming a single phase CrN film suitable for a barrier film of the copper wiring, the manufacturing conditions for forming the barrier film are determined in advance. The semiconductor device is manufactured using the predetermined conditions. Single phase CrN film is preferred as a barrier film for preventing diffusion and oxidation of the Cu wiring pattern. For example, a CrN film is formed by sputtering under specific conditions in a mixing gas atmosphere of nitrogen/argon gas. The preferred barrier film for the Cu wiring pattern has a narrow nonstoiciometric composition range of Cr:N=1:0.97-0993.

    摘要翻译： 在形成适用于铜布线的阻挡膜的单相CrN膜时，预先确定形成阻挡膜的制造条件。 使用预定条件制造半导体器件。 优选单相CrN膜作为用于防止Cu布线图案的扩散和氧化的阻挡膜。 例如，在氮/氩气的混合气体气氛中，在特定条件下通过溅射法形成CrN膜。 Cu布线图案的优选阻挡膜具有窄的非结构化组成范围Cr：N = 1：0.97-0993。