Chemical mechanical polishing slurry
    2.
    发明授权
    Chemical mechanical polishing slurry 有权
    化学机械抛光浆

    公开(公告)号:US06530968B2

    公开(公告)日:2003-03-11

    申请号:US09989021

    申请日:2001-11-20

    IPC分类号: C09G102

    CPC分类号: C09K3/1463 C09G1/02

    摘要: This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

    摘要翻译: 本发明提供了一种化学机械抛光浆料,用于抛光形成在绝缘膜上的金属膜,该金属膜在基材上具有凹陷,其中浆料含有不具有与研磨材料表面上的电荷相反的离子基团的增稠剂至0.001重量% 或更多且少于0.05重量%,并且具有1mPa.s至5mPa.s的浆液粘度。 抛光浆料可用于CMP以形成可靠的镶嵌电连接,其具有在较高抛光速率下具有优异电性能,即较高生产量,同时防止凹陷或侵蚀。

    Sodium salt of disaccharide compound, production method and use of same
    8.
    发明申请
    Sodium salt of disaccharide compound, production method and use of same 有权
    二糖化合物的钠盐,其制备方法和用途相同

    公开(公告)号:US20080227991A1

    公开(公告)日:2008-09-18

    申请号:US11984770

    申请日:2007-11-21

    IPC分类号: C07F9/06

    CPC分类号: C07H15/12

    摘要: The present invention relates to a sodium salt represented by average formula (I): (wherein, m1, n1, m2 and n2 respectively and independently represent a positive number of 0 0r 2 or less, provided that m1+n1=2, m2+n2=2, 0

    摘要翻译: 本发明涉及由平均式(I)表示的钠盐:(其中m 1,n 1,m 2和n 分别独立地表示0或2以下的正数,条件是m 1 + n 1 = 2,m< 1< 2 + 2< 2> 2< 2> 2< 1< 1> +< 2< 4><< N< (Ⅳ)代表的钠盐的分解方法:[化学式4]包括:使通式(Ⅳ)表示的钠盐的分解: 由通式(IV)表示的钠盐在由平均式(I)表示的钠盐存在下,根据本发明,通式(IV)表示的钠盐随时间的稳定性提高。