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1.发明申请Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter 有权使用大于晶片直径的等离子体排除区环来控制斜面蚀刻膜轮廓公开(公告)号：US20080227301A1
公开(公告)日：2008-09-18
申请号：US12076257
申请日：2008-03-14
申请人： Tong Fang , Yunsang Kim , Keechan Kim , George Stojakovic
发明人： Tong Fang , Yunsang Kim , Keechan Kim , George Stojakovic
IPC分类号： H01L21/3065 , B08B5/00 , B08B13/00 , C23F1/08
CPC分类号： H01L21/67028 , H01J37/32642 , H01L21/02087 , H01L21/3065
摘要： A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.
摘要翻译： 提供一种清洁半导体衬底的斜边缘的方法。 将半导体衬底放置在等离子体处理设备的反应室中的衬底支撑件上。 衬底具有覆盖衬底的顶表面和斜面边缘的介电层，该层在斜面边缘的顶点的上方和下方延伸。 将工艺气体引入反应室并通电为等离子体。 斜面边缘用等离子体清洁，以便除去顶点以下的层，而不会移除顶点上方的所有层。
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2.发明授权Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter 有权使用大于晶片直径的等离子体排除区环来控制斜面蚀刻膜轮廓公开(公告)号：US08398778B2
公开(公告)日：2013-03-19
申请号：US12076257
申请日：2008-03-14
申请人： Tong Fang , Yunsang Kim , Keechan Kim , George Stojakovic
发明人： Tong Fang , Yunsang Kim , Keechan Kim , George Stojakovic
CPC分类号： H01L21/67028 , H01J37/32642 , H01L21/02087 , H01L21/3065
摘要： A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.
摘要翻译： 提供一种清洁半导体衬底的斜边缘的方法。 将半导体衬底放置在等离子体处理设备的反应室中的衬底支撑件上。 衬底具有覆盖衬底的顶表面和斜面边缘的介电层，该层在斜面边缘的顶点的上方和下方延伸。 将工艺气体引入反应室并通电为等离子体。 斜面边缘用等离子体清洁，以便除去顶点以下的层，而不会移除顶点上方的所有层。
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3.发明申请GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBER 有权气体调节控制边缘蚀刻等离子体室的边缘排除公开(公告)号：US20090188627A1
公开(公告)日：2009-07-30
申请号：US12021177
申请日：2008-01-28
IPC分类号： B44C1/22 , H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.
摘要翻译： 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。
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4.发明授权Gas modulation to control edge exclusion in a bevel edge etching plasma chamber 有权气体调制，用于控制斜边蚀刻等离子体室中的边缘排除公开(公告)号：US08083890B2
公开(公告)日：2011-12-27
申请号：US12021177
申请日：2008-01-28
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.
摘要翻译： 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。
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公开(公告)号：US20120074099A1
公开(公告)日：2012-03-29
申请号：US13300483
申请日：2011-11-18
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.
摘要翻译： 提供斜边蚀刻方法。 一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。 该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。 等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。 然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。 气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。 并且，使调谐气体流过气体输送板的中心气体进料。
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公开(公告)号：US08349202B2
公开(公告)日：2013-01-08
申请号：US13300483
申请日：2011-11-18
IPC分类号： C23F1/00
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.
摘要翻译： 提供斜边蚀刻方法。 一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。 该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。 等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。 然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。 气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。 并且，使调谐气体流过气体输送板的中心气体进料。
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7.发明申请GAS MODULATION TO CONTROL EDGE EXCLUSION IN A BEVEL EDGE ETCHING PLASMA CHAMBER 有权气体调节控制边缘蚀刻等离子体室的边缘排除公开(公告)号：US20110253312A9
公开(公告)日：2011-10-20
申请号：US12021177
申请日：2008-01-28
IPC分类号： B44C1/22 , H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32091 , H01J2237/3341 , H01L21/02087
摘要： The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.
摘要翻译： 各种实施例提供了在基板的斜边缘附近去除不需要的沉积物以提高工艺产量的装置和方法。 这些实施例提供了具有中心和边缘气体进料作为附加过程旋钮的设备和方法，用于选择最合适的斜面边缘蚀刻工艺，以将边缘排除区域进一步朝向衬底边缘向外推动。 此外，实施例提供了具有调节气体以改变斜面边缘处的蚀刻轮廓的装置和方法，并且使用中心和边缘气体进料的组合来流动过程并将气体调谐到腔室中。 调节气体的使用和气体进料的位置都影响斜边处的蚀刻特性。 总气体流量，气体输送板和基底表面之间的间隙距离，压力和工艺气体的类型也被发现影响斜面边缘蚀刻轮廓。
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公开(公告)号：US20090170334A1
公开(公告)日：2009-07-02
申请号：US12341384
申请日：2008-12-22
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32366 , H01L21/02068 , H01L21/02087 , H01L21/32136 , H01L21/6708
摘要： A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating gas into a defluorination plasma at a periphery of the semiconductor substrate; and processing the semiconductor substrate with the defluorination plasma under conditions to prevent discoloration of the exposed copper surfaces of the semiconductor substrate upon exposure, the discoloration occurring upon prolonged exposure to air.
摘要翻译： 在半导体衬底支撑在半导体衬底支撑体上的斜面蚀刻器中，使用具有含氟等离子体的具有暴露的铜表面的半导体衬底进行斜边蚀刻的方法包括：在半导体衬底支撑体中的含氟等离子体 斜角蚀刻机 在斜边蚀刻完成之后排空斜面蚀刻机; 将脱氟气体流入斜面蚀刻机; 在所述半导体衬底的外围将所述脱氟气体通电为脱氟等离子体; 并且在曝光时防止半导体衬底的暴露的铜表面的变色的条件下，用脱氟等离子体处理半导体衬底，在长时间暴露于空气时发生变色。
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公开(公告)号：US20090272402A1
公开(公告)日：2009-11-05
申请号：US12114681
申请日：2008-05-02
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： B08B6/00
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译： 提供了一种在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。
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公开(公告)号：US08852384B2
公开(公告)日：2014-10-07
申请号：US13584646
申请日：2012-08-13
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01L21/67 , G01N21/68
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译： 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。
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