CARBON FIBER BUNDLE AND METHOD FOR PRODUCING SAME
    2.
    发明申请
    CARBON FIBER BUNDLE AND METHOD FOR PRODUCING SAME 审中-公开
    碳纤维布及其制造方法

    公开(公告)号:US20120208019A1

    公开(公告)日:2012-08-16

    申请号:US13394634

    申请日:2010-09-08

    IPC分类号: D02G3/36 B05D3/02

    摘要: The present invention relates to a carbon fiber bundle to which an amino group-containing modified polyolefin resin has applied, wherein the amount of applying amino group-containing modified polyolefin resin is 0.2 to 5.0% by mass. This carbon fiber bundle can be produced by applying 0.2 to 5.0% by mass of the amino group-containing modified polyolefin resin to the surface of the carbon fiber bundle. The present invention can exhibit excellent interface adhesion to a polyolefin resin, particularly to a polypropylene resin, and can provide a carbon fiber bundle useful for reinforcing the polyolefin resin and a method of producing the same.

    摘要翻译: 本发明涉及应用含氨基的改性聚烯烃树脂的碳纤维束,其中施加氨基的改性聚烯烃树脂的量为0.2〜5.0质量%。 该碳纤维束可以通过将0.2〜5.0质量%的含氨基的改性聚烯烃树脂施加到碳纤维束的表面来制造。 本发明可以表现出对聚烯烃树脂,特别是聚丙烯树脂的优异的界面粘附性,并且可以提供用于增强聚烯烃树脂的碳纤维束及其制造方法。

    Manufacturing apparatus of polycrystalline silicon
    7.
    发明授权
    Manufacturing apparatus of polycrystalline silicon 有权
    多晶硅制造装置

    公开(公告)号:US08652256B2

    公开(公告)日:2014-02-18

    申请号:US12555085

    申请日:2009-09-08

    IPC分类号: C30B25/00

    CPC分类号: C01B33/035

    摘要: A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.

    摘要翻译: 多晶硅产品多晶硅的制造装置通过在反应器中垂直设置的加热硅晶棒中提供原料气体而在硅晶棒的表面上沉积,包括:保持硅种子棒并制成的电极 的碳; 电极保持器,其保持电极,并由其中流动的冷却介质冷却,其中所述电极包括:保持所述硅种子棒的籽棒保持构件; 设置在种棒保持构件和电极保持器之间的加热盖; 以及覆盖所述加热盖的上表面的具有环状板状的盖保护器,并且形成有贯穿所述种棒保持部件的下端部的通孔。

    Apparatus for producing trichlorosilane and method for producing trichlorosilane
    8.
    发明授权
    Apparatus for producing trichlorosilane and method for producing trichlorosilane 有权
    三氯硅烷的制造装置及三氯硅烷的制造方法

    公开(公告)号:US08529844B2

    公开(公告)日:2013-09-10

    申请号:US13345864

    申请日:2012-01-09

    IPC分类号: B01J19/00 C01B33/107

    摘要: An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.

    摘要翻译: 三氯硅烷的制造装置具备:分解炉,加热分解炉内部的加热单元,将导向聚合物的原料供给管和被引导到分解炉的内底部的氯化氢,以及气体排出 用于从设置在原料供给管的外周面和分解炉的内周面之间的反应室顶部排出反应气体的管,引导聚合物和供给的氯化氢的流体混合物的翅片 从原料供给管的下端开口在反应室内被搅拌上升,与原料供给管的外周面和分解炉的内周面中的至少一个一体形成 。

    Image processing device and image processing method for generation of color correction condition
    9.
    发明授权
    Image processing device and image processing method for generation of color correction condition 有权
    用于产生色彩校正条件的图像处理装置和图像处理方法

    公开(公告)号:US08433134B2

    公开(公告)日:2013-04-30

    申请号:US12902070

    申请日:2010-10-11

    申请人: Toshiyuki Ishii

    发明人: Toshiyuki Ishii

    IPC分类号: G06K9/00 H04N5/228

    摘要: Included are determining a position of a pixel serving as an extraction subject by using first image data photographed under a first light source; determining an extraction range corresponding to the determined position, by using a color value of the pixel at the determined position and a color value of a pixel at a peripheral position around the determined position in the first image data; calculating a first representative color value from the first image data and a second representative color value from second image data photographed under a second light source, on the basis of the position of the pixel serving as the extraction subject and the extraction range; and generating a color correction condition for converting a color value depending on the first light source into a color value depending on the second light source.

    摘要翻译: 包括通过使用在第一光源下拍摄的第一图像数据来确定用作提取对象的像素的位置; 通过使用所确定的位置处的像素的颜色值和在所述第一图像数据中所确定的位置周围的周边位置处的像素的颜色值来确定与所确定的位置相对应的提取范围; 基于用作提取对象的像素的位置和提取范围,从第一图像数据计算第一代表色值和来自第二光源下拍摄的第二图像数据的第二代表色值; 以及生成用于将依据第一光源的颜色值转换为根据第二光源的颜色值的颜色校正条件。

    Method for manufacturing polycrystalline silicon
    10.
    发明授权
    Method for manufacturing polycrystalline silicon 有权
    多晶硅制造方法

    公开(公告)号:US08043660B2

    公开(公告)日:2011-10-25

    申请号:US12292793

    申请日:2008-11-26

    IPC分类号: C23C16/00

    CPC分类号: C01B33/325

    摘要: A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition.

    摘要翻译: 通过有效地防止对硅棒的粗糙表面或硅棒的直径不规则的不期望的形状来制造高质量的多晶硅的方法。 制造多晶硅的方法包括:沉积的初始稳定步骤,其中从气体喷射口排出原料气体的速度逐渐增加; 成形步骤首先以高于稳定步骤的速度增加喷射速度,然后喷射速度以比先前增加速率低的速率逐渐增加; 以及生长步骤,其中在成形步骤之后,使喷射速度比成型步骤结束时的喷射速度慢,直到沉积结束。