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公开(公告)号：US07433380B2
公开(公告)日：2008-10-07
申请号：US11510638
申请日：2006-08-28
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US20070147457A1
公开(公告)日：2007-06-28
申请号：US11510638
申请日：2006-08-28
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US20090017570A1
公开(公告)日：2009-01-15
申请号：US12208833
申请日：2008-09-11
IPC分类号： H01L21/02
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US20070223550A1
公开(公告)日：2007-09-27
申请号：US11727229
申请日：2007-03-26
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0021 , H01S5/2206 , H01S5/3201 , H01S5/3211 , H01S5/34326 , H01S2301/173
摘要： A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.
摘要翻译： 半导体激光器件具有多层结构，其包括依次在半导体衬底上堆叠的第一覆盖层，有源层和第二覆盖层，以便与半导体衬底的距离增加。 第一覆盖层和第二覆盖层中的至少一个相对于半导体基板具有压缩变形。 第一覆盖层和第二覆盖层中的至少一个包括相对于半导体基板具有拉伸变形的半导体层。
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公开(公告)号：US07704759B2
公开(公告)日：2010-04-27
申请号：US12208833
申请日：2008-09-11
IPC分类号： H01L21/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US07711023B2
公开(公告)日：2010-05-04
申请号：US11727229
申请日：2007-03-26
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0021 , H01S5/2206 , H01S5/3201 , H01S5/3211 , H01S5/34326 , H01S2301/173
摘要： A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.
摘要翻译： 半导体激光器件具有多层结构，其包括依次在半导体衬底上堆叠的第一覆盖层，有源层和第二覆盖层，以便与半导体衬底的距离增加。 第一覆盖层和第二覆盖层中的至少一个相对于半导体基板具有压缩变形。 第一覆盖层和第二覆盖层中的至少一个包括相对于半导体基板具有拉伸变形的半导体层。
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公开(公告)号：US07693202B2
公开(公告)日：2010-04-06
申请号：US11918123
申请日：2006-12-14
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , G11B7/127 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/3436 , H01S5/4087
摘要： In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.
摘要翻译： 在其中在一个n型GaAs衬底101上构建红外激光器部件100和红色激光器部件130的单片双波长激光器件中，红外激光器部件100的p型第一包层105和p型 红色激光部130的第一包层135由相同的材料制成，具有不同的杂质浓度。
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公开(公告)号：US20090086780A1
公开(公告)日：2009-04-02
申请号：US11918123
申请日：2006-12-14
IPC分类号： H01S5/10
CPC分类号： H01S5/22 , B82Y20/00 , G11B7/127 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/3436 , H01S5/4087
摘要： In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.
摘要翻译： 在其中在一个n型GaAs衬底101上构建红外激光器部件100和红色激光器部件130的单片双波长激光器件中，红外激光器部件100的p型第一包层105和p型 红色激光部130的第一包层135由相同的材料制成，具有不同的杂质浓度。
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公开(公告)号：US20070127532A1
公开(公告)日：2007-06-07
申请号：US11516509
申请日：2006-09-07
申请人： Satoshi Murasawa , Toru Takayama , Isao Kidoguchi
发明人： Satoshi Murasawa , Toru Takayama , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1014 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/4087
摘要： A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on both sides of the ridge stripe and having a current blocking layer for confining the current in the ridge stripe. A distance from a lower face of the current blocking layer to an upper face of the active layer is within a given range. Also, the current spreads beyond a width of the ridge stripe after passing the ridge stripe and before reaching the active layer.
摘要翻译： 半导体激光二极管在基板上包括第一覆层; 形成在所述第一包层上的有源层; 形成在所述有源层上并具有用于将电流注入到所述有源层中的脊条的第二覆层; 以及形成在脊条的两侧上并且具有用于将电流限制在脊条中的电流阻挡层的发光部分。 从当前阻挡层的下表面到有源层的上表面的距离在给定范围内。 此外，电流在通过脊条之后并且在到达有源层之前扩展到超过脊条纹的宽度。
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公开(公告)号：US07463665B2
公开(公告)日：2008-12-09
申请号：US11516509
申请日：2006-09-07
申请人： Satoshi Murasawa , Toru Takayama , Isao Kidoguchi
发明人： Satoshi Murasawa , Toru Takayama , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1014 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/4087
摘要： A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on both sides of the ridge stripe and having a current blocking layer for confining the current in the ridge stripe. A distance from a lower face of the current blocking layer to an upper face of the active layer is within a given range. Also, the current spreads beyond a width of the ridge stripe after passing the ridge stripe and before reaching the active layer.
摘要翻译： 半导体激光二极管在基板上包括第一覆层; 形成在所述第一包层上的有源层; 形成在所述有源层上并具有用于将电流注入到所述有源层中的脊条的第二覆层; 以及形成在脊条的两侧上并且具有用于将电流限制在脊条中的电流阻挡层的发光部分。 从当前阻挡层的下表面到有源层的上表面的距离在给定范围内。 此外，电流在通过脊条之后并且在到达有源层之前扩展到超过脊条纹的宽度。
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