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公开(公告)号：US07433380B2
公开(公告)日：2008-10-07
申请号：US11510638
申请日：2006-08-28
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US20090017570A1
公开(公告)日：2009-01-15
申请号：US12208833
申请日：2008-09-11
IPC分类号： H01L21/02
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US20070223550A1
公开(公告)日：2007-09-27
申请号：US11727229
申请日：2007-03-26
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0021 , H01S5/2206 , H01S5/3201 , H01S5/3211 , H01S5/34326 , H01S2301/173
摘要： A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.
摘要翻译： 半导体激光器件具有多层结构，其包括依次在半导体衬底上堆叠的第一覆盖层，有源层和第二覆盖层，以便与半导体衬底的距离增加。 第一覆盖层和第二覆盖层中的至少一个相对于半导体基板具有压缩变形。 第一覆盖层和第二覆盖层中的至少一个包括相对于半导体基板具有拉伸变形的半导体层。
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公开(公告)号：US07704759B2
公开(公告)日：2010-04-27
申请号：US12208833
申请日：2008-09-11
IPC分类号： H01L21/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US20070147457A1
公开(公告)日：2007-06-28
申请号：US11510638
申请日：2006-08-28
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译： 在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号：US07711023B2
公开(公告)日：2010-05-04
申请号：US11727229
申请日：2007-03-26
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0021 , H01S5/2206 , H01S5/3201 , H01S5/3211 , H01S5/34326 , H01S2301/173
摘要： A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.
摘要翻译： 半导体激光器件具有多层结构，其包括依次在半导体衬底上堆叠的第一覆盖层，有源层和第二覆盖层，以便与半导体衬底的距离增加。 第一覆盖层和第二覆盖层中的至少一个相对于半导体基板具有压缩变形。 第一覆盖层和第二覆盖层中的至少一个包括相对于半导体基板具有拉伸变形的半导体层。
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公开(公告)号：US07693202B2
公开(公告)日：2010-04-06
申请号：US11918123
申请日：2006-12-14
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , G11B7/127 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/3436 , H01S5/4087
摘要： In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.
摘要翻译： 在其中在一个n型GaAs衬底101上构建红外激光器部件100和红色激光器部件130的单片双波长激光器件中，红外激光器部件100的p型第一包层105和p型 红色激光部130的第一包层135由相同的材料制成，具有不同的杂质浓度。
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公开(公告)号：US20090086780A1
公开(公告)日：2009-04-02
申请号：US11918123
申请日：2006-12-14
IPC分类号： H01S5/10
CPC分类号： H01S5/22 , B82Y20/00 , G11B7/127 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/3436 , H01S5/4087
摘要： In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.
摘要翻译： 在其中在一个n型GaAs衬底101上构建红外激光器部件100和红色激光器部件130的单片双波长激光器件中，红外激光器部件100的p型第一包层105和p型 红色激光部130的第一包层135由相同的材料制成，具有不同的杂质浓度。
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公开(公告)号：US20080198887A1
公开(公告)日：2008-08-21
申请号：US11907016
申请日：2007-10-09
申请人： Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
发明人： Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/222 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.
摘要翻译： 半导体激光器件包括在半导体衬底上彼此分开形成的第一腔和第二腔。 第一腔包括第一缓冲层和包括第一有源层的第一半导体层，第二腔包括第二缓冲层和包括第二有源层的第二半导体层。 在第一半导体层和第二半导体层的端面附近的区域设置有窗口结构。 第一缓冲层的带隙大于第一缓冲层的带隙，第二缓冲层的带隙大于第二有源层的带隙。
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公开(公告)号：US07653104B2
公开(公告)日：2010-01-26
申请号：US12246859
申请日：2008-10-07
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/3406 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/173
摘要： A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb
摘要翻译： 红色激光部分和红外激光部分集成在n型GaAs衬底上。 在红外激光部中由p型AlGaInP构成的p型覆层和在红外线激光部中由p型AlGaInP构成的p型覆层具有具有发光点的脊条部。 在每个脊条部分的两侧形成由SiNx形成的电流阻挡层，并且在当前阻挡层上的每个脊条区域的外侧选择性地形成由ZrO 2制成的应变缓和层。 假设Tc是p型覆层的热膨胀系数，Tb是当前阻挡层的热膨胀系数，Ts是应变缓和层的热膨胀系数，Tb
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