摘要:
A process for producing 2,6-naphthalene dicarboxlic acid which comprises oxidizing a 2-alkyl-6-acyl naphthalene with molecular oxygen-containing gas in the presence of a catalyst containing cobalt, manganese and bromine in an acetic acid solvent, characterized in that the oxygen concentration in the exhaust gas is controlled so as to satisfy the following equation:15/(X+7.5)+0.1.ltoreq.Y.ltoreq.90/(X+8)+0.4 (1)wherein Y is oxygen concentration (volume %) in the exhaust gas and X (cm) is a distance between the inlet for an oxygen gas and the surface of the reaction solution in a static state, and the catalyst further contains an aromatic acid in which at least two carboxylic acid groups are in an orthposition or its precursor as a co-catalyst, and that part of all of the mother liquor from which the 2,6-naphthalene dicarboxylic acid crystal has been separated is cooled to remove the precipitated impurities, and thereafter is reused in the oxidation reaction, is disclosed.
摘要:
A process for producing highly pure 2,6-napthalene dicarboxylic acid, characterized by hydrolyzing 2,6-dimethyl naphthalene dicarboxylate more than 99% pure in an aqueous solution by using an aromatic poly-carboxylic acid as a catalyst is disclosed.
摘要:
A process for producing 2,6-naphthalene dicarboxylic acid which comprises oxidizing a 2-alkyl-6-acyl naphthalene with molecular oxygen-containing gas in the presence of a catalyst containing cobalt, manganese, bromine and at least one metal selected from the group consisting of iron, copper and mixtures thereof in an acetic acid solvent is disclosed.
摘要:
Disclosed is a proton conducting polymer membrane formed by laminating a plurality of solid electrolyte membranes. This proton conducting polymer membrane is one prepared by laminating at least one layer of a solid electrolyte membrane formed by using a resin having a bis(perfluoroalkanesulfonyl)methide group in the chemical structure. This solid electrolyte membrane has a superior proton conductivity without transmitting the fuel (methanol or hydrogen).
摘要:
When migrating a virtual server between a plurality of physical servers, a pre-migration connection relationship between the virtual server and a storage area used by the virtual server is maintained after the migration of the virtual server by using a cooperative mechanism between a plurality of storage apparatuses even if the storage area used by the virtual server is migrated between the plurality of storage apparatuses. A computer system and virtual server migration control method for the computer system is described.
摘要:
A semiconductor device includes: a semiconductor element that includes an electrode layer on a surface of the semiconductor element; a low-strength layer that is provided on a surface of the electrode layer; a bonding layer that is provided on a surface of the low-strength layer; and a conductive plate that is provided on a surface of the bonding layer. Strength of the bonding layer is higher than strength of the electrode layer, and strength of the low-strength layer is lower than the strength of the electrode layer.
摘要:
A snapshot volume is migrated by using a primary volume of a migration destination storage apparatus.The management server comprises a controller for generational management, by means of the snapshot volumes, of differential data for the logical volume which is the parent volume of the snapshot volume, and, if an instruction to copy a snapshot volume of a designated generation is received and a snapshot volume prior to the designated generation of the copy instruction-target snapshot volume exists, the controller copies the differential data between the designated-generation snapshot volume and the existing snapshot volume, and associates the copied differential data with the existing snapshot volume.
摘要:
In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要:
A storage system capable of identifying all volumes to be audited is provided.Operation logs 3005 concerning the operations of volumes are associated with a time and stored in storage apparatuses 1400 and 1500, and a management computer 1100 collects information about these operation logs 3005, restores the status history of the operation logs 3005, sets, as an audit range, the operation logs 3005 including volumes with an audit period and audit target data stored therein, extracts the operation logs 3005 belonging to the audit range from the restored status history of the operation logs 3005, and transmits the extracted operation logs 3005 to a computer (requesting computer) 1000. As a result, all the audit target volumes can be identified.
摘要:
In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.